IXYN82N120C3 Search Results
IXYN82N120C3 Price and Stock
IXYS Corporation IXYN82N120C3IGBT MOD 1200V 105A 500W SOT227B |
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IXYS Corporation IXYN82N120C3H1IGBT MOD 1200V 105A 500W SOT227B |
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Littelfuse Inc IXYN82N120C3Disc Igbt Xpt-Genx3 Sot-227B(Mini/ Tube |Littelfuse IXYN82N120C3 |
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IXYN82N120C3 | Bulk | 300 |
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Littelfuse Inc IXYN82N120C3H1Disc Igbt Xpt-Genx3 Sot-227Ui(Mini/ Tube |Littelfuse IXYN82N120C3H1 |
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IXYN82N120C3H1 | Bulk | 300 |
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IXYN82N120C3 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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IXYN82N120C3 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT XPT 1200V 105A SOT-227B | Original | 6 | ||||
IXYN82N120C3H1 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT MODULE 1200V 105A SOT227B | Original | 7 |
IXYN82N120C3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IXYN 82N120C3
Abstract: 82N120C3 IXYN82N120C3 ixyn82n120 ixyn
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IXYN82N120C3 IC110 OT-227B, E153432 82N120C3 IXYN 82N120C3 IXYN82N120C3 ixyn82n120 ixyn | |
Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYN82N120C3H1 High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient ±20 ±30 V |
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IC110 IXYN82N120C3H1 OT-227B, E153432 IF110 82N120C3 | |
IXYN82N120C3H1
Abstract: ixyn82n120 ixyn82n120c3
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IXYN82N120C3H1 IC110 IF110 OT-227B, E153432 82N120C3 IXYN82N120C3H1 ixyn82n120 ixyn82n120c3 | |
82N120C3Contextual Info: Preliminary Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous |
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IXYN82N120C3 IC110 OT-227B, E153432 82N120C3 2-13-12-A | |
82N120C3Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN82N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous |
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IC110 IXYN82N120C3 OT-227B, E153432 82N120C3 | |
Contextual Info: IXYN82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 46A 3.2V 93ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Ec Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ |
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IXYN82N120C3H1 IC110 OT-227B, E153432 IF110 |