IXYS 047 Search Results

IXDD414CI

Abstract: VM0580
Contextual Info: PRELIMINARY DATA SHEET IXDD414PI IXDD414YI IXDD414CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak

cmos 4000 series

Abstract: fully protected p channel mosfet high speed mosfet driver
Contextual Info: IXDD408PI IXDD408YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch Up Protected • High Peak Output Current: 8A Peak

cmos 4000 series

Abstract: IXDD414YI IXDD414PI
Contextual Info: IXDD414PI IXDD414YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch-Up Protected • High Peak Output Current: 14A Peak

IXDD404SI

Contextual Info:  IXDD404PI IXDD404SI PRELIMINAR YD ATA SHEET PRELIMINARY DA 4 Amp, Dual Ultrafast MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch-Up Protected • High Peak Output Current: 4A Peak

IXTH20N50D

Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
Contextual Info: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.

Contextual Info: □ IXYS Advanced Technical Information V.DSS IXFH 20N60Q IXFT 20N60Q HiPerFET Power MOSFETs = D25 Q Class DS on = 600 V 20 A 0.35 Q trr < 250ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Maximum Ratings Symbol Test C onditions

Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings

13.56MHZ 3KW GENERATOR

Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A

Contextual Info: □ IXYS HHifl JL æ* X HiPerFET Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, LowQg V^ = 200 V U = R ds ,o„, = trr < 200 ns 80 A 28m Q Preliminary data sheet Maximum Ratings Symbol TestConditions

Contextual Info: □ IXYS Advanced Technical Information IXFH 52N30Q IX F K 52N30Q IXFT 52N30Q HiPerFET Power MOSFETs Q -Class V,DSS ^D25 R DS on t = 300 V = 52 A = 60 mQ < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Low Gate Charge and Capacitances

D1488

Contextual Info: □ IXYS Advanced Technical Information HiPerFET IXFH/IXFK/IXFT80N10 Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Test C onditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i v DGR V GS V GSM ^D25 ^DM 100 100

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFET Power MOSFETs IXFH 58N20Q IXFT 58N20Q Q-Class VDSS = '□25 = R DS on = 200 V 58 A mQ 4 0 trr < 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, LowQg Preliminary data sheet Symbol Maximum Ratings Test Conditions

Contextual Info: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

IXYS DS 145

Abstract: 13N100
Contextual Info: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS

Contextual Info: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C

Contextual Info: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

001-045

Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20

L-1047

Contextual Info: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous

Contextual Info: □ IXYS Advanced Technical Information IXGH 20N100 IXGT 20N100 IGBT Symbol Test Conditions v CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C

15N120CD1

Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
Contextual Info: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR

IXFH58N20

Contextual Info: □ IXYS HiPerFET Power MOSFETs V DSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family D DS on ^D25 42 A 60m Q 50 A 45m Q 58 A 40m Q 200 V 200 V 200 V trr < 200 ns TO-247 AD (IXFH) Maximum Ratings

30n60b

Abstract: B2045
Contextual Info: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: □ IXYS U ltr a - L o w V . „ IG B T CE sat IX G H 31N 60 Vr„ = IX G T 31N 60 I = 60 = 1 .7 V CES C25 V rP , CE(sat) 6 0 0 V A Preliminary data sheet Symbol Test C onditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600