J 2N708 Search Results

2n3773 power Amplifier circuit diagrams

Abstract: AD534 vacuum tube applications data book 759N Non-Linear Circuits Handbook Analog Devices 2N3773 audio amplifier diagram
Contextual Info: wt sin <P\ "-o" \J \J ~ sin wt Yo . wt cos q, + cos \s•~' •n wt cos wt . q,\ Sl~' . 2wt cos q, +" _\I_,_,J3.- \SI~' \J . t sin <P\ t coS q, + Sll' 2ul \j \J~ \\.'_cOS 2 W £o" :-.g) \J \J~ \11'11'\-IP.S£\ cos <P " Of 1'\-lp.S£\ "-o " 20 \J \J~ l's0° ol.ll

2N65s

Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
Contextual Info: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Contextual Info: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran­

Contextual Info: Tem ic 2N7086 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Q ) I d (A) 200 0.16 14 TO-257AB H erm etic P ackage O r O — It J |i Case Isolated s G D S Top View

TO205AD

Abstract: 2N4033 MOTOROLA TO205AD to-205ad 2N3635 MOTOROLA 2N3440 MOTOROLA
Contextual Info: 4bE J> m b3b?254 OOlEbfil 0 •flOTb T-91-60 MOTOROLA SC XSTRS/R F Small-Signal Transistors, Bipolar (continued) Switching Transistors The following devices are intended primarily for use in general-purpose switching, but can be used in amplifier and driver

BCY591

Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
Contextual Info: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

transistor c 4236

Abstract: ic cow 160v 150 N7082 2N7082 EI33
Contextual Info: SILICONIX INC 33E D JïiSSSKSä • 0254735 QOlbOSê 7 « S I X 2N 7082 T ^ -u N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BRJDSS •d (A 200 0.30 9.0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

bcy5b

Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
Contextual Info: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

2N2368

Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
Contextual Info: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4

Contextual Info: CRIMSON S E M I C O ND UC TO R INC TT •.~>=. •^^ - 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 2 9 2 D DfViCE TYPl PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB V i M IN IVI M IN (VI M IN («IAI M A X |V| De ( E s m o ^ b INC ' J ~ — 3 & - c>'i COB fT Nf tp tl U A f t

2N702

Abstract: 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N743 2N914
Contextual Info: MOTOROLA I SC -CDIODES/OPTOJ- 6367255 MOTOROLA SC 34 D Ü j|fc .3 h 7 E 5 S D IO D E S /O P TO 34C □ U ^ Ï T r '5 37975 "I D T'35-J5 SILICO N SM A LL-SIG N A L TR A N SISTO R DICE (continued) 2C2369A DIE NO. — NPN LINE SOURCE — DMB103 This die provides performance similar to that of the following device types:

BSX21

Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
Contextual Info: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

Contextual Info: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

BCY79-9

Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
Contextual Info: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.

ESM2369

Abstract: 2N3605A MPS4275 2n3564 2N4418 2SC321H tis49 2N3606 BSY19 BSX88
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

2n2224

Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

transistor c 4236

Abstract: 2N7082 transistor 257A
Contextual Info: 2N7082 ITSiicaiiix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -257A B Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS 200 rDS(ON) (n ) (A) •d 0.30 9.0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

A2S4735

Contextual Info: Te m ic Siliconix_ 2N7081 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (Q ) Id (A) 100 0.15 13 TO-257AB H erm etic Package D p O Case Isolated G D S N-Channel M OSFET Tbp View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

2N7080

Contextual Info: T em ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 -9 .5 TO-2S4AA Hermetic Package o rO |h D S G P-C hannel M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

2N7080

Contextual Info: Tem ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 - 9 .5 T O -2 5 4 A A S H erm etic Package 9 O C ase Isolated O u uu D D S G Top View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

2N7085

Contextual Info: Tem ic 2N7085 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) 100 r DS(on) (ß ) 0.075 I d (A) 20 TO-2S7AB H erm etic Package o Case Isolated Ô G D S Top View s N-Channel M OSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)