U310 Search Results

741J

Contextual Info: Temic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number V G S ioff V ) J3 0 8 - I t o - 6 .5 V (B R )G S S M in (V ) g ft Min (mS) -2 5 8 Id ss M in (m A ) 12 J309 —1 t o —4

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Contextual Info: IRFR/U310A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 -7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K

Contextual Info: N-ChannelJFET High FrequencyAmplifier U308-U310 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • H igh P ow er Gain Lo w N oise D ynam ic R ange G reater The 100dB E asily M atched to 75£2 Input Gate-Drain or Gate-Source V o lta g e . -25V

U310

Abstract: U308 U309
Contextual Info: |G E SOLID STATE 01 DE I 3fl7SDñl DDllGSfl 5 | 01E 11058 ; 3875081 G E SOLID STATE I D HNnñHIIL U308-U310 = N-Channel JF E T 3 High Frequency Amplifier W FEATURES ABSOLUTE MAXIMUM RATINGS • • • • Ta = 25°C unless otherwise noted Gate-Drain or Gate-Source V o lta g e . -2 5 V

U308-U310

Abstract: U310
Contextual Info: IG E SOLI» STATE Dl DE 13fl75Qfll DD110SÖ 5 | 01E 11058 D U308-U310 N-Channel JFET High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • H ig h P o w e r G ain Ta = 25°C unless otherwise noted Gate-Drain or Gate-Source V o lt a g e . - 2 5 V

IBJT VDS 400V

Abstract: IBJT IBJT VDS 400V, 10A 2a 400v mosfet irfr 20
Contextual Info: IRFR/U310A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 3 .6 Î2 1.7 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -PA K ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

TO252AA

Abstract: EIA-541 IRFR120 IRFU120 TO-252AA
Contextual Info: PD - 95028A IRFR310PbF U310PbF • Lead-Free 1 IRFR/U310PbF 2 IRFR/U310PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234

J-Series

Abstract: Siliconix JFETs Dual J308 J309 J310 SST308 SST309 SST310 U309 U310
Contextual Info: J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 −1 to −6.5 J309 −1 to −4 −25 8 12 −25 10 J310 12 −2 to −6.5

Siliconix J310

Abstract: SST310 Siliconix N-Channel JFETs U309 J308 J309 J310 SST308 SST309 U310
Contextual Info: J/SST/U308 Series N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 –1 to –6.5 J309 –1 to –4 –25 8 12 –25 10 12 J310 –2 to –6.5 –25 8 24

U310

Contextual Info: N-Channel JFET High Frequency Amplifier LLC U308 – U310 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified FEATURES • High Power Gain • Low Noise Range Greater The 100dB • Dynamic • Easily Matched to 75Ω Input Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V

Contextual Info: U310 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)150p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

u310 siliconix

Abstract: Siliconix J310 marking 6AC sot23 U309 U310
Contextual Info: T e m ic J/SST/U308 Series Siliconix N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary P a rt N um ber I DSS M in mA - w Ë G s m 0 ) : X : V(BR)u ss M in (V) 12 J308 - 1 to -6 .5 -2 5 8 J309 - 1 to - 4 -2 5 10 12 J310 - 2 to -6 .5

U310

Contextual Info: J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMM ARY Part Number VgW V J308 - 1 to - 6 . 5 -2 5 8 J309 -1 to - 4 -2 5 10 12 J310 - 2 to - 6 . 5 -2 5 6 24 SST308 -1 to - 6 . 5 -2 5 8 12 SST309 - 1 to —4

STU310DH

Abstract: TO-252-4L stu310
Contextual Info: S T U310DH S amHop Microelectronics C orp. May,28,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 30V 19A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

u-310

Abstract: u310
Contextual Info: U310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U310 The U310 is a high frequency n-channel JFET offering a wide range and low noise performance. The hermetically sealed TO-18 package is well suited for high reliability and harsh environment applications.

Contextual Info: IRFR/U310A Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 3 .6 Q 1 .7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

Contextual Info: PD - 95028A IRFR310PbF U310PbF • Lead-Free Document Number: 91272 12/10/04 www.vishay.com 1 IRFR/U310PbF Document Number: 91272 www.vishay.com 2 IRFR/U310PbF Document Number: 91272 www.vishay.com 3 IRFR/U310PbF Document Number: 91272 www.vishay.com 4

U310

Abstract: U308 u-310 U308-10 U309 XU308-10
Contextual Info: N-Channel JFET High Frequency Amplifier LLC U308 – U310 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified FEATURES • High Power Gain • Low Noise Range Greater The 100dB • Dynamic • Easily Matched to 75Ω Input Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V

MOSFET IRF 635

Contextual Info: PD - 95085 IRLR/U3103PbF Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (U3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 30V

Contextual Info: PD - 9.1333C International IOR Rectifier IRLR/U3103 HEXFET Power M O SFET • Logic-Level Gate Drive • Ultra Low On-Resistance • Surface Mount IRLR3103 • Straight Lead (U3103) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated

Contextual Info: PD - 91333E IRLR/U3103 HEXFET Power MOSFET Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (U3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 30V RDS(on) = 0.019Ω

Contextual Info: PD - 95085A IRLR/U3103PbF Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (U3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 30V