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    J8400 Search Results

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    J840

    Abstract: OD-J8400-0B01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-SM dryer block diagram J8400
    Contextual Info: OE HYBRID 622.08Mbps Transmitter OD-J8400-0B01 OC-12: LR-1 STM-4: L-4.1 1 Copyright C 1994-2001 NEC Corporation 2 n d October 2001 Rev.4 - Contents 1. PRODUCT NUMBER . 3


    Original     		08Mbps OD-J8400-0B01 OC-12: J840 OD-J8400-0B01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-SM dryer block diagram J8400 PDF

    OD-S524-SC-SM

    Abstract: HA01 OD-J6860-0A01 OD-J6860-HA01 OD-J8400-0B01 OD-J8410-0B01 OD-S524-FCPC-SM OD-S524-MUJ-SM
    Contextual Info: OD-J6860-0A01/HA01, OD-J8400-0B01 OD-J8410-0B01 622Mbps Optical Transmitter for SONET/SDH Systems FEATURES n n n n n n n Designed for SONET /SDH /ATM Systems. Reflow Solderable SMT Package. Compact Size: 26 x 10 x 3 mm . Low Power Consumption: 0.3W (Typ.).


    Original     		OD-J6860-0A01/HA01, OD-J8400-0B01 OD-J8410-0B01 622Mbps OD-J6860-0A01 OC-12 OD-S524-SC-SM HA01 OD-J6860-HA01 OD-J8400-0B01 OD-J8410-0B01 OD-S524-FCPC-SM OD-S524-MUJ-SM PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    ZT2015

    Abstract: SDT1000
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902 PDF

    panasonic c5904

    Abstract: L9741 H9730 h9745 H-9730 l9742 D790011 H9718 h9723 SLG84435
    Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 5 2 3 4 1 CK APPD SANTANA - M51 MLB REV ZONE ECN H ENG APPD DESCRIPTION OF CHANGE 468168 PRODUCTION RELEASED


    Original     		U9760 74LC125 R9742 1/16W C9745 C9742 panasonic c5904 L9741 H9730 h9745 H-9730 l9742 D790011 H9718 h9723 SLG84435 PDF

    SDT1000

    Abstract: mt1888 ST54 2n16 DT6104 Stc1094 1205t MHT8012 usaf520es070 usaf521es071
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 SDT1000 mt1888 ST54 2n16 DT6104 Stc1094 1205t MHT8012 usaf520es070 usaf521es071 PDF

    SDT1000

    Abstract: DT6104 RCA508 1205t MJ8400 MD-21 XT2C M021 857m 25T80
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. 100mT 800kSA 1561A608 1561A615 800MA STC1094 SDT1000 DT6104 RCA508 1205t MJ8400 MD-21 XT2C M021 857m 25T80 PDF

    d7810

    Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
    Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED


    Original     		M78-DVT d7810 L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269 PDF

    R61517

    Abstract: AS0B32 MXM spec pp601 40 AS0B326 126S0086 FST 172 U7200 Apple K23 MLB J9402
    Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 5 2 3 4 1 CK APPD SANTANA - M51 MLB REV ZONE ECN 17 ENG APPD DESCRIPTION OF CHANGE 440406 ENGINEERING RELEASED


    Original     		1/16W C9742 U9760 74LC125 R61517 AS0B32 MXM spec pp601 40 AS0B326 126S0086 FST 172 U7200 Apple K23 MLB J9402 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    r4363

    Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
    Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED


    Original     		M72-DVT 03/0m72 r4363 L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013 PDF

    ZT2015

    Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 ZT2015 SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T PDF