JAN07 Search Results

Contextual Info: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 14150 JAN07/13 KL 5.50 [.217] DEEP THREADED HOLES. SEE ORDERING CODE THREAD OPTION 1 1 4.50 .177 24.00 .945 2.50 .098 RUGGED 8 POSITION RECEPTACLE DATE CODE INK MARKING

Contextual Info: A B C D E G F H REVISIONS 5.50 [.217] DEEP THREADED HOLES. SEE ORDERING CODE THREAD OPTION REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 14150 JAN07/13 K.L. B PRODUCT DRAWING (EAR 14296) JUL24/14 K.L. 1 1 4.50 .177 24.00 .945 2.50 .098 DATE CODE

Contextual Info: R E V IS IO N S SYM ERN NO. B APPRD. DATE JAN07/08 PROPOSAL 4 AMPHENOL PART NUMBER CONFIGURATION EON, ZONE NOV05/08 UPDATED THIS IS A CAD DRAWING. DO NOT MANUALLY REVISE. U78 — B 1 1 2 7 — 0 X X X 1 DUST COVER OPTION -0 = NO DUST COVER

Contextual Info: A B C D E G F H REVISIONS 5.50 [.217] DEEP THREADED HOLES. SEE ORDERING CODE THREAD OPTION 4.50 .177 1 REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 13977 JAN31/13 KL 28.32±0.50 1.115±.020 24.00 .945 2.50 .098 DATE CODE INK MARKING 18.00±0.25

Contextual Info: TH I 5 DRAW I N G IS COPYRIGHT UNPUBLI SHED. 19 RELEASED BY AMP INCORPORATED. FOR ALL PUBLICATION RIGHTS . I9 LOC REV I S IONS D I ST DY RESERVED. LTR DESCRIPTION NOT E S : E1 - is * P OS . 0 . 40 . MA T E R I A L : HOUSING: CONTACT : SOLDER PEG: # f ln C U U ln Q n t U ln G r

mark P03

Contextual Info: JGN-07-2000 11:40 u LTC BOSTON SPILES i 978 656 4760 P.02 LM138/883 5 Amp Positive Adjustable Regulator m TECHNOLOGY m n x im u m u r t i a g s D C S C R IP TIO n a b s o lu te The LM138/883 is a 3 terminal positive adjustable regula­ tor capable of supplying up to 5A. The output is adjusted

Contextual Info: Preliminary Datasheet, Rev. 1.6, Januar 2007 6ED003L06-F Integrated 3 Phase Gate Driver Power Management & Drives N e v e r s t o p t h i n k i n g 6ED003L06-F Integrated 3 Phase Gate Driver 6ED003L06-F Preliminary Revision History: Previous Version: Page

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

180-nm CMOS standard cell library inverter

Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
Contextual Info: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents „ „ „ Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006

Contextual Info: TH I S DRAW ING IS U N P U B L I S H E D . C O P Y R I G H T 2 0 08 R E L E A S E D FOR P U B L I C A T I O N L OC REV I S IONS D I ST BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R I G H T S R E S E R V E D . D E S C R I P T I ON M4 M5 16-AUG-05 None gleich

a8498

Abstract: ECR-07-00
Contextual Info: TH I 5 DRAW I NG I S U N P U B L I S H E D . COPYRIGHT R E L E A S E D FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. ALL RIGHTS . I9 LOC REV I S IONS D I ST DY RESERVED. LTR R E V I S E D E C R - 07-00 I 592 N OT E S : -is * POS . # fln C U U ln Q n t U ln G r

NS9360B-0-C177

Abstract: NS9360B-0-I155 NS9750B-0-C125 NS9750B-0-C200 NS9360B-0-C103 NET 50-QIT-3 301902901 NS7520B-1-I55 DB78F UNC20
Contextual Info: Digi International RoHS Compliant Product Information Item Description Plan Compliant Note Sample - Production Date Multiport Serial Cards 76000001 4 Port DB9F DTE Cable RoHS Jun-06 76000002 4 Port DB9F RS422 Cable RoHS Feb-06 76000003 4 Port DB9M DTE Cable

1519B

Abstract: P4C1041
Contextual Info: P4C1041 HIGH SPEED 256K x 16 4 MEG STATIC CMOS RAM FEATURES Easy Memory Expansion Using CE and OE Inputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down when deselected Packages —44-Pin SOJ, TSOP II High Speed (Equal Access and Cycle Times)

Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement

Contextual Info: Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement Tom Hand, Jennifer Welborn, and Jim Oerth Skyworks Solutions, 20 Sylvan Road, Woburn, MA 01801 Tom.Hand@Skyworksinc.com 781 376-3539 Keywords: … Backend Process Visual Yield Six Sigma

Contextual Info: 2 TH I S DRAW ING IS U N P U B L I S H E D . COPYRIGHT 2006 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S COR POR AT I ON . A L L RIGHTS 20 LOC REV I S I O N S D I ST 2 RESERVE[ - p LTR DE SCRI PTI ON A2 1. RJ 4 E C A T E G O R Y 5E P A T E H E A B L E A S S E M B L I E S

Contextual Info: 2 TH I S DRAW ING IS U N P U B L I S H E D . COPYRIGHT 2006 1. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S COR POR AT I ON . A L L RIGHTS 20 LOC D I ST RJ 4 E C A T E G O R Y 5E P A T E H E A B L E A S S E M B L I E S USED AS P A T E H L E A D S IN GEN ERI C C U S T O M E R

fast diode SOT-227

Abstract: N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264
Contextual Info: TM Power MOS 8 is a new family of high speed, high voltage N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above

Contextual Info: 4 TH IS DRAWING 3 IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT RIGHTS - 2 - LOC RESERVED. GP BY TYCO ELECTRONICS CORPORATION. 7 27.10 [1.067] / S \ DATE CODE DIST 00 LTR D E SC RIPTIO N C -Y - DATE REVISED PER E C O -0 7 -0 0 0 5 1 3

BAT18

Abstract: BAT18-05 BAT18-04
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

P9936LV

Abstract: nikos
Contextual Info: P9936LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 120mΩ 5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS