JEDEC MO-203 AB Search Results

jedec MO-203

Abstract: MO-203-AB MO-203-AB KS-6 MO-203AB
Contextual Info: a 6-Lead Thin Shrink Small Outline Transistor Package [SC70] KS-6 Dimensions shown in millimeters 2.20 2.00 1.80 6 5 4 1 2 3 0.65 BSC 1.30 BSC 1.00 0.90 0.70 0.10 MAX COPLANARITY 0.10 2.40 2.10 1.80 1.10 0.80 0.30 0.15 SEATING PLANE 0.40 0.10 0.22 0.08 COMPLIANT TO JEDEC STANDARDS MO-203-AB

Contextual Info: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Abkündigung nach OS-PD-2010-003 Obsolete acc. to OS-PD-2010-003 Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level

74HC

Abstract: 74LS M16A M16D MM74HC151 MM74HC151M MM74HC151MTC MM74HC151SJ MTC16
Contextual Info: Revised February 1999 EMICONDUCTGRTM MM74HC151 8-Channel Digital Multiplexer General Description T he MM74HC151 high speed Digital m ultiplexer utilizes advanced silicon-gate C M O S technology. Along w ith the high noise im m unity and low pow er dissipation of standard

Contextual Info: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC151 8-Channel Digital Multiplexer General Description The M M74HC151 high speed D igital m ultiplexer utilizes advanced silicon-gate C M O S technology. Along w ith the high noise im m unity and low pow er dissipation of standard

Q65110A8160

Contextual Info: Golden DRAGON Plus Lead Pb Free Product - RoHS Compliant LCW W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klare Silikonlinse, Chip level conversion • Typischer Lichtstrom: 85 lm bei 350 mA und bis zu 203 lm bei 1 A (3500K) • Besonderheit des Bauteils: hocheffiziente

smd code book 9u

Abstract: abe 433 smd transistor cy
Contextual Info: Golden DRAGON Plus Lead Pb Free Product - RoHS Compliant LCW W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klare Silikonlinse, Chip level conversion • Typischer Lichtstrom: 85 lm bei 350 mA und bis zu 203 lm bei 1 A (3500K) • Besonderheit des Bauteils: hocheffiziente

Contextual Info: Golden DRAGON Plus Lead Pb Free Product - RoHS Compliant LCW W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klare Silikonlinse, Chip level conversion • Typischer Lichtstrom: 85 lm bei 350 mA und bis zu 203 lm bei 1 A (3500K) • Besonderheit des Bauteils: hocheffiziente

CCIR 468-2

Abstract: u 2829 4445 DIP SWITCH 10 PIN U2829 TDA audio power amplifier tda audio amplifier TDA4445 4445a IF5249
Contextual Info: TDA 4445 A-TDA4445 B TTllLlFtLDKlCSSKi electronic C reativ e T ec hn o lo g ie s QUASI PARA LL EL SOUND PR OC ES SI NG WI TH QU AD RA TU RE INTERCARRIER DE MO DU LA TO R T D A 44 45 B ADDITIONAL: AM DE MODULATOR Technology: Bi po la r . Fe atures : o Very high input sensitivity

S0010

Contextual Info: Revised February 1999 SEMICONDUCTOR TM MM74HC151 8-Channel Digital Multiplexer General Description The MM74HC151 high speed Digital m ultiplexer utilizes advanced silicon-gate C M OS technology. Along w ith the high noise im m unity and low pow er dissipation of standard

LCW W5AP-LXMX-4R9T

Contextual Info: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 203 lm bei 1400 mA

Contextual Info: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 203 lm bei 1400 mA

lcw w5ap

Abstract: abe 433 smd code book 9u OHA03621 smd transistor cy w5ap
Contextual Info: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 203 lm bei 1400 mA

Contextual Info: HN28F101 Series 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Fiash Memory organized as 131,072 x 8-bit. The HN28F101 is cap ab le o f in -syste m e le ctrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V

MM74HC245AN

Abstract: M20D MM74HC245A MM74HC245AMTC MM74HC245ASJ MM74HC245AWM MS-013 MTC20
Contextual Info: Revised February 1999 EMICONDUCTGRTM MM74HC245A Octal 3-STATE Transceiver General Description T he M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M O S technology, and is intended fo r tw o-w ay asynchronous com m unication between data

74LS139

Abstract: M16A M16D MM74HC139 MM74HC139M MM74HC139MTC MM74HC139SJ MTC16 diode D254
Contextual Info: Revised February 1999 E M IC O N D U C T O R T M MM74HC139 Dual 2-To-4 Line Decoder General Description equivalent to the 74LS139. All inputs are protected from dam age due to static discharge by diodes to V qq and T he M M 74H C 139 d ecoder utilizes advanced silicon-gate

74hc157m

Contextual Info: S E M I C O N D U C T O R Revised February 1999 TM MM74HC157 Quad 2-Input Multiplexer General Description T h e M M 74H C 157 high speed Q uad 2-to-1 Line data selecto r/M ultiplexers utilizes advanced silicon-gate CM OS te ch ­ nology. It possesses the high noise im m unity and low

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: A I R EM I C O C H S eptem ber 1983 I L D N D U G Revised February 1999 T O R TM MM74HC139 Dual 2-To-4 Line Decoder equivalent to the 74LS139. All inputs are protected from dam age due to static discharge by diodes to V qq and General Description The M M 74H C 139 deco d e r utilizes advanced silicon-gate

74HC

Abstract: 74LS M16A M16D MM74HC157 MM74HC157M MM74HC157MTC MM74HC157SJ MTC16
Contextual Info: Revised February 1999 E M IC O N D U C T O R T M MM74HC157 Quad 2-Input Multiplexer General Description T h e M M 74H C 157 high speed Quad 2-to-1 Line data selec­ tor/M ultiplexers utilizes advanced silicon-gate C M OS te ch ­ nology. It possesses the high noise im m unity and low

Contextual Info: DS-ICE37LC512 512K bit, 64KX8 OTP EPROM Description The ICE37LC512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 3.3V power supply in normal read mode operation. Any byte can be accessed in less than 100ns. The ICE37LC512 typically consumes 10mA ,

fototransistor BPW 39

Abstract: BPW39 visible phototransistor
Contextual Info: BPW39 Silizium-NPN-Epitaxial-Planar-Fototransistor Silicon NPN Epitaxial Planar Phototransistor Anwendung: Application: Em pfänger in elektronischen Steuer- und R egeleinrichtungen D etector in e lectronic co n tro l and drive circuits Besondere Merkmale:

Contextual Info: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC175 Quad D-Type Flip-Flop With Clear General Description The M M 74H C 175 high speed D -type flip-flop w ith com ple­ m entary outputs utilizes advanced silicon-gate C M OS technology to achieve the high noise im m unity and low

74hc123a

Contextual Info: September 1983 Revised February 1999 E M IC O N D U C T G R T M General Description The MM74HC123A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technol­ ogy. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and high

diode D254

Abstract: 74HC 74LS M16A M16D MM74HC175 MM74HC175M MM74HC175MTC MM74HC175SJ MTC16
Contextual Info: Revised February 1999 E M IC O N D U C T G R T M MM74HC175 Quad D-Type Flip-Flop With Clear General Description T he M M 74H C 175 high speed D -type flip-flop w ith com ple­ m entary outputs utilizes advanced silicon-gate C M OS technology to achieve the high noise im m unity and low