JEDEC24 Search Results

cmf20120

Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

Contextual Info: CAS300M12BM2 VDS 1.2 kV 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-RecTM Diode Esw, Total @ 300A RDS on Features • • • • • • • Package 5.0 mΩ 62mm x 106mm x 30mm Enables Compact and Lightweight Systems High Efficiency Operation

Contextual Info: CAS300M12BM2 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Z-FET MOSFET and Z-Rec™ Diode Module Features •       VDS = 1.2 kV Esw,Total@300A = 12.0 mJ RDS on = 5.0 mΩ Package 62 mm x 106 mm x 30 mm Ultra Low Loss High-Frequency Operation

Contextual Info: VDS 1200 V ID @ 25˚C 17.7 A CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 160 mΩ N-Channel Enhancement Mode Features • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

Contextual Info: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

CMF20120D

Abstract: cmf20120
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS 1200 V ID MAX 42 A R 80mΩ DS(on) N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

c2m0080120

Abstract: Cree SiC MOSFET CPM2-1200-0080B C2M0080120D
Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on)

Contextual Info: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

CPMF-1200-S080B

Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
Contextual Info: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive

bare Die mosfet

Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
Contextual Info: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G

Cree SiC MOSFET

Contextual Info: CAS300M17BM2 1.7kV, 8.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode 1.7 kV RDS on 8.0 mΩ Esw, Total @ 300A, 150 ˚C Features • • • • • • • VDS Package 23.7 mJ 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation

DMOSFET

Abstract: CMF10120 CMF10120D CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET
Contextual Info: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 160 mΩ N-Channel Enhancement Mode Qg Features • • • • • • Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive

CPMF-1200-S160B

Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
Contextual Info: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive

DMOSFET

Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
Contextual Info: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate

C2M1000170

Abstract: Diode 1S 2473
Contextual Info: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

cmf20120

Abstract: CMF20120D MOSFET 20a 800v
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

JEDEC24

Abstract: CPM2-1200-0025B solar charge circuit max 856 CPM2
Contextual Info: VDS 1200 V ID @ 120˚C 50 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

c2m0080120

Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams
Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

Contextual Info: VDS 1200 V ID @ 25˚C 60 A CPM2-1200-0040B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Chip Outline High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

CCS020M12CM2

Abstract: CPWR-AN13
Contextual Info: CCS020M12CM2 1.2kV, 80 mΩ Silicon Carbide Six-Pack Three Phase Module C2M MOSFET and Z-Rec Diode 1.2 kV RDS(on) 80 mΩ Esw, Total @ 20A, 150 ˚C Features • • • • • • • VDS 0.48 mJ Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode

C2M0160120D

Contextual Info: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

CMF10120D

Abstract: CMF10120 mosfet 10a 800v high power solar charge circuit max 856 mosfet 10a 800v high frequency C4D05120A
Contextual Info: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 24 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive