JVR 2 Search Results

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Contextual Info: Resolver to Digital Converter R/D Converter JAC3601 Our environmentally friendly products contribute to comfortable and safe driving. JVR series enables smooth starting, acceleration and deceleration with higher mileage. Quick response T������ S������������

10N471K

Abstract: varistor 10n471k 10n431k VARISTOR 10n241k Varistor 10N431K JVR-10n431k 10N271K 10N470K varistor 10N391K JVR-10N471K
Contextual Info: Maximum Allowable Voltage Part No. ACrrns OC V (V) Maximum Varistor Voltage Withstanding Clamping V/O.lmA Surge Current Voltage (V) Tolerance Min - Max V/25A (V) 1 Tim e 2 Tim es (V) (A) Rated Energy wattage 10/1000 (3) (W ) Typical Capaci­ tance 1 KHz

7N241K

Abstract: 7n431k 7n471k 7n431k varistor varistor 7N271K varistor 7N391K JVR-7N431K 7n271k 7N180K 7N470K
Contextual Info: Maximum Allowable Voltage Part No. Maximum Varistor Voltage Withstanding Clamping V/O.lmA Surge Current Voltage ACrms DC Tolerance V Mm - Max (V) (V) V/10A (V) 1 Time 2 Times (V) (A) Typical Energy Rated Capaci­ Wattage 10/I000>*s tance (W) (J) 1 KHz (PF)

CH-135

Abstract: CH-130-4 430WECAN SIGNAL PATH designer
Contextual Info: DIRECTIONAL COUPLER SELECTION GUIDE MODEL NO. CO-920-4 CH-130-4 CH-136 CH-137 CHS-137 CH-134 CHS-134* CH-138 CH-135 CH-139 CH-132 CH-140 DCG-10-4 CH-143 FREQUENCY RANGE MHz COUPLING (dB) NOM MAIN LINE LOSS (dB) TYP DIRECTIVITY (dB) TYP VSWR TYP 2-32 20 3D

5N431K

Abstract: varistor 5N431K varistor 5N390K JVR-5N391K JVR-5N390K 5N220K 5n391k 5N241K JVR-5N431K 5N221K
Contextual Info: Maximum Allowable Voltage Part No. Maximum Vanstor Voltage [Withstanding Clamping V/O.lmA purge Current Voltage AC rrtis DC Tolerance V Min - Max (V) (V) V/5A (V) Typical Energy Rated Capaci­ Wattage lO/lOOOPs tance 1 Time 2 Times (V) (A) (W ) CD 1 KHz

レゾルバ

Abstract: JAC3601
Contextual Info: R/D コンバータ コンバータ レゾルバ レゾルバ - デジタル変換器 デジタル変換器 (R/D 綺麗な水と澄んだ空気に満ちあふれた美しい地球。 ハイブリッド自動車や電気自動車は このかけがえのない地球を子供たちへ残すためのクリーンな乗り物です。

RS-435

Abstract: RG232
Contextual Info: JY B -K D -L L D i&9ÌÌÉ&j8tt3SiÉÉH ita s a a '& ì B •E jé b is m - , s a K a ts r. ff l* a o s . m , r n , xaicaota. % m . hkb. m & à 5 ffl; £ ittè § : -i t T t ì t a ì t . ■O T i . -S ì A ^ i f i ì l , ■S f f i S f t f t . ££5111

dh730

Abstract: JVR 0.7
Contextual Info: \ SILICON TUNING VARACTORS This series of Si tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated m esa tech n ology. P a c k a g e d or ch ip d e v ice s are a v a ila b le for VHF linear electron ic tuning. Packaged diodes

JVR-1

Contextual Info: O R A W IN G MADE IN A M E R I C A N P R O JE C T IO N I9€£ B Y A M P PRODUCTS A T E D . A L L R IG H T S R E S E R V E D . A M P P A T E N T S AND/OR P A T E N T S PEND IN G « D B A COSTO H£E. s I OH ^A. t-*P* PA.RT NiO. 5TKMP>. JCi SO 5 0 4 AMP 1471-1

TLP590

Contextual Info: i GaAs IRED & PHOTO-DIODE ARRAY TELECOMMUNICATION TLP590 TENTATIVE DATA PROGRAMMABLE CONTROLLERS. MOS GATE DRIVER MOS FET GATE DRIVER The TOSHIBA TLP590 consists of a galium arsenide infrared emitting diode optically coupled to a series connected photo-diode array in a six lead plastic DIP

Contextual Info: _ EDI8F8257C ^ E D I EI«c1rontc D * d g re In c. < Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered epoxy laminate FR4 substrate.

256Kx4

Abstract: EDI8F4258C
Contextual Info: m m EDI8F4258C Electronic D#* gn» In c , High Speed Megabit SRAM Module 256Kx4 Static RAM CMOS, High Speed Module Features The EDI8F4258C is a Megabit 256Kx4) high speed Static RAM Module with separate input/output lines. It is intended for use in any application where large quanti­

Contextual Info: m o EDI8F4258C i Electronic D«aignt Inc« High Speed Megabit SRAM Module 256Kx4 Static RAM CMOS, High Speed Moduie Features The EDI8F4258C is a Megabit 256Kx4 high speed Static RAM Module with separate input/output lines. It is intended for use in any application where large quanti­

Contextual Info: EDI8832C E lectronic Declgn« In c.« High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features 1.2. 1. 32Kx8 bit CMOS Static Random Access Memory • Access Times 70,85,100,120 and 150ns • Data Retention Function EDI8832LP only

Contextual Info: M Dl EDI8833C/LP/P High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS;Monolithic Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power CMOS Static RAM organized as 32,768 words by 8 bits each. Inputs and three-state outputs are TTL compatible and

2SA1152

Abstract: 2SA-1152 2sc2719 ILI9331 M10565 2sa115 1S955 PA33 ci 740
Contextual Info: '> 2 ? Silicon Transistor I z i > h SA 7 > > X 1152 =5 %m ti a j: &+ iSJ$ x -i y=f-> y m n QM M » # f£ ^ mm) < fà iìF P .T t* P t = 600 mW o 2 SC 2 7 1 9 1 5.2 MAX. V Ce o = - 8 0 V =>> 7 °') / > 9 ') T 'i i f f l 'C 'è t t a ( T a —25 °C ) m

Contextual Info: ^EDI _EDI8F8513C Electronic D«*lgns Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module The EDI8F8513C is a 4096K bit CMOS Static RAM based on sixteen 32Kx8 Static RAMs in plastic SOJ chip carriers mounted on a multi-layered epoxy laminate FR4

Contextual Info: TOLD9441 MD T O SH IB A TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power :P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 1. LASER DIODE ANODE O¿ j, uT An uCi T^ ?iÜv TYITfcTVI?

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

1001dl

Abstract: display tos 3191 cloak tag rf neatsx 82C578 Chips and Technologies 00le C042 capacitor b20 Buzzer
Contextual Info: 82C578 î | CHIPStemi Single Chip fc Terminal Controller II Advance Product Information li 1 March 1991 .¿ H < n . A g t > y V M I N R Y «PH«PPW H» •■■■■f Im a. im■■ ^ n i r D Copyright Notice Copyright 1990-1991, Chips and Technologies, Inc. ALL RIGHTS RESERVED.

Contextual Info: 4TE D j TAIWAN LI TO N E L E C T R O N I C L I T E M 0035^5 0 0 0 3 12 1 711 • TLIT « P # » E f i a » # * » ?*"? ■ " P 4 I-2 .S 2.0 ' « -sa COLOR & MULTICOLOR FEATURES • 2.0 IN C H 5 0 .8 0 m m M A T R IX H E IG H T . • LO W POWER R E Q U IR E M E N T .

GP54 diode

Abstract: LAD1 12v lad1 5v 8P4R 4.7k DIODE GP25 WPT 95 12 ps2ms IT8711F DIODE GP54 GP50
Contextual Info: 5 D 4 3 2 1 D IT8711F Application Circuit V0.2 Page1 : Revision History Page2 : IT8711F Page3 : Serial & Parallel Ports Page4 : VID,IR,CIR,FDC & Smart Card Reader Connector Page5 : Layout & Routing Guideline C C REVISION HISTORY SCHEMATIC REVISION PCB REVISION

display tos 3191

Abstract: lightpen LD 7577 ps 1001dl A1W8 keyboard interfacing with controllers using c neatsx PC mini keyboard CIRCUIT diagram 82C578 t46 A101
Contextual Info: 82C578 CfflPSterm Single Chip Terminal Controller Advance Product Information March 1991 M I N A Ft Y m m m W ÊÊÊKÊKBÈw m m :¡ l i i l i i i i :S; IS i ill S l i V '-' sï^J V\v :;yi^jÿiv?;ÿï&à$ïi&:x:iS-isiSï?:Î: S i|l|â p |iM ;i liiil^ » /