K/20 AMP MOSFET Search Results

K/20 AMP MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

K/20 AMP MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
bmw logic 7 Contextual Info: K f r m m c Etm R bMw o e s c SMART K Ï i\l[MI N Y C l Mi l ' PÜWTH S SHASr 4321 fylOTOT D R IV E P O W E R H Y B R ID " 8170 Thompson Road Clesra N.Y. 13039 315 699-9201 FEATURES: - • • * • * * MIL-STD-1772 CERTIFIED 200V, 20 Amp Capability Ultra Low.Thermat Realstance - Junction to Case • 1.0° C/W (Each M0SFED	OCR Scan	MIL-STD-1772 25KHz MSK4321 MSK4321B II-H-38534 bmw logic 7	PDF
SK 43 Contextual Info: /SO-9001 CERTIFIED BY DESC M .S .K E N N E D Y CORP. 20 AMP, 200 VOLT M O S F E T S M A R T PO W ER 3-PH A SE M O T O R D R IV E PO W ER H Y B R ID /IQ Q 1 ^ T O ^ ì 8170 Thompson Road Cícera N.Y. 13039 315 699-9201 FEATURES: * * * * * * I MIL-STD-1772 CERTIFIED	OCR Scan	SO-9001 25KHz MIL-STD-1772 SK4321 Military-Mil-H-38534 SK 43	PDF
marking K1 sot363 Abstract: AGC-10 BG3123 BG3123R VPS05604 152V16 Contextual Info: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain	Original	BG3123. VPS05604 BG3123 BG3123R EHA07461 OT363 BG3123R* Feb-27-2004 marking K1 sot363 AGC-10 BG3123 BG3123R VPS05604 152V16	PDF
Marking 2G2 Contextual Info: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain	Original	BG3123. BG3123 VPS05604 BG3123R EHA07461 BG3123 BG3123R* OT363 Marking 2G2	PDF
BG3130 Abstract: BG3130R VPS05604 3D SOT363 Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain	Original	BG3130. VPS05604 BG3130 BG3130R EHA07461 OT363 Feb-27-2004 BG3130 BG3130R VPS05604 3D SOT363	PDF
Contextual Info: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain	Original	BG3123. BG3123 VPS05604 BG3123R EHA07461 BG3123 BG3123R* OT363	PDF
Marking G2 Abstract: BCR108S BG3430R Contextual Info: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes	Original	BG3430R OT363 Marking G2 BCR108S BG3430R	PDF
BG3430R Abstract: Marking G2 BCR108S Contextual Info: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range	Original	BG3430R OT363 BG3430R Marking G2 BCR108S	PDF
IG-14 Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain	Original	BG3123. BG3123 BG3123R EHA07461 OT363 IG-14	PDF
Contextual Info: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes	Original	BG3430R OT363	PDF
Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain	Original	BG3123. BG3123 BG3123R OT363	PDF
AGC-10 Abstract: BCR108S BG3123 BG3123R Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain	Original	BG3123. BG3123 BG3123R OT363 AGC-10 BCR108S BG3123 BG3123R	PDF
marking code g1s Abstract: BCR108S BG3123 BG3123R mosfet tetrode amp marking 125 marking 5 rf amp Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain	Original	BG3123. BG3123 BG3123R OT363 marking code g1s BCR108S BG3123 BG3123R mosfet tetrode amp marking 125 marking 5 rf amp	PDF
BCR108S Abstract: BG5412K FET marking code Contextual Info: BG5412K Dual N-Channel MOSFET Tetrode • Designed for input stages of 2 band tuners 4 5 6 • Two AGC amplifiers in one single package, with on-chip internal switch 1 2 3 • Only one switching line to control both FETs • Integrated gate protection diodes	Original	BG5412K OT363 BCR108S BG5412K FET marking code	PDF

BCR108S Abstract: BG3130 BG3130R 3D SOT363 marking K1 sot363 Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain	Original	BG3130. BG3130 BG3130R OT363 18may BCR108S BG3130 BG3130R 3D SOT363 marking K1 sot363	PDF
Contextual Info: BG5412K Dual N-Channel MOSFET Tetrode • Designed for input stages of 2 band tuners 4 5 6 • Two AGC amplifiers in one single package, with on-chip internal switch 1 2 3 • Only one switching line to control both FETs • Integrated gate protection diodes	Original	BG5412K OT363	PDF
marking K1 sot363 Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain	Original	BG3130. BG3130 BG3130R EHA07461 OT363 OT363 marking K1 sot363	PDF
Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain	Original	BG3130. BG3130 VPS05604 BG3130R EHA07461 BG3130 OT363	PDF
BCR108S Abstract: BG3130 BG3130R Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain	Original	BG3130. BG3130 BG3130R OT363 BCR108S BG3130 BG3130R	PDF
Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain	Original	BG3130. BG3130 VPS05604 BG3130R EHA07461 BG3130 OT363	PDF
Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain	Original	BG3130. BG3130 BG3130R OT363	PDF
Contextual Info: Panel Mount DataSheet 1-DCL Series • Ratings from 7A to 40A @ 200 VDC and from 7A to 10A @ 500VDC • Mosfet Output • UL Approved, CE Compliant to EN60950-1 • Improved SEMS screw and washer • Redesigned housing with anti-rotation barriers • DC control	Original	500VDC EN60950-1 D1D20L D1D40L D2D40L D5D10L D1D12L SJ/T11364	PDF
Contextual Info: Panel Mount DataSheet 1-DC Series • Ratings from 7A to 40A @ 200 VDC and from 7A to 10A @ 500VDC • Mosfet Output • UL Approved, CE Compliant to EN60950-1 • Improved SEMS screw and washer • Redesigned housing with anti-rotation barriers • DC control	Original	500VDC EN60950-1 D1D12 D2D12 D4D12 D1D20 D1D40 D2D40 D5D10 D1D07	PDF
tea1795 Abstract: BSS123 NXP application note tea1761 TEA1795T 2N7002 BSN20 BSS123 VC10 2N7002 NXP AN10954 Contextual Info: AN10954 GreenChip SR TEA1795T dual synchronous rectification driver IC Rev. 1 — 14 December 2010 Application note Document information Info Content Keywords TEA1795T, MOSFET, driver IC, synchronous, rectifier, resonant, converter Abstract The TEA1795T is a dual synchronous rectifier driver IC for a resonant	Original	AN10954 TEA1795T TEA1795T, tea1795 BSS123 NXP application note tea1761 2N7002 BSN20 BSS123 VC10 2N7002 NXP AN10954	PDF

K/20 AMP MOSFET Search Results

K/20 AMP MOSFET Result Highlights (5)

K/20 AMP MOSFET Datasheets Context Search

bmw logic 7

SK 43

marking K1 sot363

Marking 2G2

BG3130

Marking G2

BG3430R

IG-14

AGC-10

marking code g1s

BCR108S

BCR108S

marking K1 sot363

BCR108S

tea1795