bulk inner box label ST
Abstract: No abstract text available
Text: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N6427
MMBT6427
2N6427
OT-23
MPSA14
bulk inner box label ST
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pa 2030a
Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95
Text: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).
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2SA1722,
2SC4498
QQ073bb
T-31-13
10ki2)
2SA1722/2SC4498-applied
2SA1722
pa 2030a
2SC4498
LB 1001 SANYO
k 2059 TRANSISTOR
transistor npn d 2058
2028A
bau 95
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2SC4498
Abstract: 2SA1722
Text: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).
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i707b
QQQ73fab
2SA1722,
2SC4498
r-35-/;
2SA1722/2SC4498-applied
2SA1722
2SC4498
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k 2059 TRANSISTOR
Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR
Text: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency
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2SC4400
2SC4400-applied
k 2059 TRANSISTOR
TRANSISTOR BI 187
2T transistor surface mount
pa 2030a
2SC4400
NPN S2e
1Ft TRANSISTOR
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SANYO SS 1001
Abstract: 2SA1678 2SC4398 bau 95 T-37-I s2e transistor
Text: SANYO SEMICONDUCTOR CORP 2SA1678, 2SC4398 22E D TTTTOTb 000731=4 T T-37-/3 ” P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications with Bias Resistances R1=10ki2, R 2=10k0 27 6 6 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit
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2SA1678,
2SC4398
0Q073b4
T-37-Ã
10kfl,
10kohms
10kohms)
2SAl678/2SC4398-applied
2SA1678
SANYO SS 1001
2SC4398
bau 95
T-37-I
s2e transistor
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2sd444
Abstract: 2SD44 1SA16
Text: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product
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2SA1685,
2SC4443
2SA1685
2sd444
2SD44
1SA16
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IJ9 marking
Abstract: 2SC4396 2SA1676 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE
Text: S A N Y O S E M I C O N D U C T O R CORP 2SA1676, 2SC4396 E2E D 7 ,H 7 0 7 b G0073LG S T - 37-/3 -r-JS-U . PN P /N PN Epitaxial Planar Silicon Transistors 2059 Switching Applications with Bias Resistances R1=47kQ, R2=47ki2 2764 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit
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G0073LG
2SA1676,
2SC4396
47ki2,
47kohm3
47kohms)
2SAl676/2SC4396-applied
2SA1676
IJ9 marking
2SC4396
27641
transistor npn d 2058
bau 95
BL 19 20-69
SANYO CE
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2SC4365
Abstract: 2SC4402 SK200
Text: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V
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2SC4402-applied
2SC4365
2SC4402
SK200
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sj 2038
Abstract: 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 2SA1685 2SC4443 C4443 M685
Text: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product
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0OG707Ã
2SA1685,
2SC4443
2SA1685
sj 2038
2SD444
ic sj 2038
ANI 1015
IC ti 072
2SC1443
C4443
M685
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mosfet k 2038
Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB
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2SK2170
2SK1068
2SK1069
2SK1332
2SK2219
2SK303
2SK545
2SK771
mosfet k 2038
TO-40-040
PCP MOSFET
2sd1851 TRANSISTOR
transistor 2SA transistor 2 sa 72
2SB1205
2SC5155
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45581
Abstract: marking YT 2SC485
Text: Ordering number : EN 4 5 5 8 2SC4851 i SAXYO i NPN Epitaxial Planar Silicon Transistor Muting Circuits F eatu res • Very small-sized package perm itting 2SC4851-applied sets to be made smaller and slimer. • Small output capacitance. • Low collector-to-emitter saturation voltage.
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2SC4851
2SC4851-applied
12894HO
AX-8027
45581
marking YT
2SC485
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3485 No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain •H igh Vebo V e b o = 25V • High reverse hpE (150 typ)
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2SC4694-applied
7190MH
2SC4694
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ic chip ic 4410
Abstract: 4410 ic
Text: O rd e rin g n u m b e r: E N 4 4 1 0 No.4410 SA%YO 2SC4909 NPN Epitaxial Planar Silicon Transistor Muting Circuits, Drivers F eatu res • High DC current gain. • On chip bias resistance Ri = 47kii, R2 = 47kf2 . •Very small-sized package perm itting 2SC4909-applied sets to be made sm aller and slimmer.
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2SC4909
47kii,
47kf2)
2SC4909-applied
N3093TH
BX-0302
ic chip ic 4410
4410 ic
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C-4555
Abstract: c4555
Text: O rd e rin g n u m b n r: EN 3 1 8 7 2SA1745/2SC4555 No.3187 PNP/NPN Epitaxial Planar Silicon Transistor S A \Y O Low-Frequency G eneral-Purpose _Amp A pplications Features •Very small-sized package perm itting the 2SAl745/2SC4555-applied sets to be made small and slim
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2SA1745/2SC4555
2SAl745/2SC4555-applied
2SA1745
200mA
2SA1745/2SC4555
2SA1745
2SC4555
7219YT
1745/2S
1745/2SC
C-4555
c4555
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2SD444
Abstract: No abstract text available
Text: I O rd e rin g n u m b e r EN 3200 iSA%YO 2SA1685/2SC4443 No.3200 PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • Fast switching speed • High gain-bandwidth product • Low saturation voltage : 2SA1685 A bsolute M axim um R atings at Ta = 25°C
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2SA1685/2SC4443
2SA1685
1685/2SC4443
2SD444
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2N4424
Abstract: gli rca RCA Solid State Power Transistor "to-98" package 2C3-42T94
Text: Dï SOLI» STATE ï Er| 3Ö750Ö1 DDlVTBb h 01E 17936 3875081 G E SOLID STATE - Signal Transistors- D T '35-/5’ 2N4424 Silicon Transistors F e a tu re s : • L o w Saturation Voltage ■ High B eta * 9 0 0 m W @ T c = 2 5 °C
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2N4424
900mW@
2N4424
92C9-417Â
gli rca
RCA Solid State Power Transistor
"to-98" package
2C3-42T94
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SANYO CP Package
Abstract: No abstract text available
Text: PACKAGE DIMENSIONS OF SURFACE M O UN T TRANSISTORS Vol.2 • A l l of Sanyo Surface Mount T ransistor Vol.2 package dimensions are illustrated below. • A l l dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values.
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018A/B
2045B
SANYO CP Package
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EN4410
Abstract: ic marking 4410 FXK 53 marking jn bx-0302 2SC4909
Text: Ordering n u m b e r:E N 4 4 1 0 2SC4909 No.4410 NPN Epitaxial Planar Silicon Transistor SM YO i Muting Circuits, Drivers F e a tu re s • High DC current gain. •On-chip bias resistance Ri = 47kO, R2 = 47kO . • Very small-sized package perm itting 2SC4909-applied sets to be made smaller and slimmer.
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EN4410
2SC4909
47ki2)
2SC4909-applied
EN4410
ic marking 4410
FXK 53
marking jn
bx-0302
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2SC3772
Abstract: 2SC4403
Text: Ordering number : EN 2756 _ 2 S C 4 4 0 3 NPN Epitaxial Planar Silicon Transistor VHF/UHF Local Oscillator Applications Applications • VHF/UHF oscillators Features • High cutoff frequency : fr = 3.0GHz typ : MAG= 12dB typ f=0.9GHz •High power gain
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2SC4403
2SC4403-applied
2SC3772
2SC4403
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transistor npn d 2058
Abstract: 2SC4398 2SA1678 BU 2058 transistors marking HJ SANYO SS 1001
Text: SANYO SEMI CONDUCTOR CORP 2SA1678, 2SC4398 2EE D 71*170711 00073b4 T T -3 7 -/3 7~ ~ 3s-n Ä ^ P N P/N P N Epitaxial Planar S ilico n Tra nsisto rs 2059 Switching Applications with Bias Resistances R1=10kfl, R2=10kß @2766 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit
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2SA1678,
2SC4398
00073b4
T-37-Ã
10kfl,
10kohms
10kohms)
2SAl678/2SC4398-applied
2SA1678
transistor npn d 2058
2SC4398
BU 2058
transistors marking HJ
SANYO SS 1001
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transistor npn d 2058
Abstract: 2PD601A
Text: Philips Semiconductors BB bb53T31 N APIER 002b055 473 IA P X NPN general purpose transistor FEATURES objective specification b7E PHILIPS/DISCRETE 2PD601; 2PD601A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION
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bb53T31
002b055
2PD601;
2PD601A
2PB709
2PB709A
2PD601Q:
2PD601R:
2PD601S:
2PD601AQ:
transistor npn d 2058
2PD601A
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2SC4694
Abstract: TA11
Text: Ordering num ber: EN 3485 SM Ê YO i No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain • High V eb o V e b o —25V • High reverse hpE (150 typ)
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2SC4694
2SC4694-applied
2SC4694
TA11
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transistor kd 2059
Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
Text: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit
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2SA1677,
2SC4397
0D073Lj2
T-37-13
22ki2,
22ki2)
22kohms
22kohms)
2SA1677/2SC4397-appiled
2SA1677
transistor kd 2059
KD 2059
s2e transistor
NPN S2e
kd 616
transistor npn d 2058
2SC4397-appiled
2SC4397
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transistor npn d 2058
Abstract: k 2059 scr gate driver ic 2SA1677 2SC4397 s2e transistor
Text: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit
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0D073L
2SA1677,
2SC4397
T-37-Ã
22ki2,
22ki2)
22kohms
22kohms)
2SA1677/2SC4397-appiied
2SA1677
transistor npn d 2058
k 2059
scr gate driver ic
2SC4397
s2e transistor
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