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    K12A50D Search Results

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    K12A50D Price and Stock

    Toshiba America Electronic Components TK12A50D(STA4,Q,M)

    MOSFET N-CH 500V 12A TO220SIS
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    DigiKey TK12A50D(STA4,Q,M) Tube 32 1
    • 1 $2.7
    • 10 $2.7
    • 100 $1.5288
    • 1000 $1.06949
    • 10000 $1.04697
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    Avnet Americas TK12A50D(STA4,Q,M) Tube 32 Weeks 50
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    • 100 $0.93132
    • 1000 $0.88356
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    Mouser Electronics TK12A50D(STA4,Q,M) 257
    • 1 $2.65
    • 10 $1.96
    • 100 $1.56
    • 1000 $1.12
    • 10000 $1.03
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    EBV Elektronik TK12A50D(STA4,Q,M) 19 Weeks 2,500
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    Toshiba America Electronic Components TK12A50D

    MOSFET N-CH 500V 12A TO-220SIS
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    Win Source Electronics TK12A50D 55,809
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    • 1000 $0.3557
    • 10000 $0.3419
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    Toshiba America Electronic Components TK12A50D(STA4

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    Win Source Electronics TK12A50D(STA4 55,803
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    Toshiba America Electronic Components TK12A50D(STA4.X.S)

    Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics TK12A50D(STA4.X.S) 55,800
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    • 1000 $0.3557
    • 10000 $0.3419
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    K12A50D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K12A50D

    Abstract: TK12A50D K12a50 K12A50D* VDD400 K*A50D
    Contextual Info: K12A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A50D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.45 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0S (標準)


    Original     		TK12A50D SC-67 2-10U1B 20070701-JA K12A50D TK12A50D K12a50 K12A50D* VDD400 K*A50D PDF

    K12A50D

    Abstract: K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A
    Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A PDF

    K12A50D

    Abstract: K*A50D
    Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K*A50D PDF

    K12A50D

    Abstract: toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A
    Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A PDF

    K12A50D

    Abstract: TK12A50D
    Contextual Info: K12A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A50D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.45 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0S (標準)


    Original     		TK12A50D K12A50D TK12A50D PDF

    K12A50D

    Abstract: K12a50 TK12A50D
    Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K12a50 TK12A50D PDF