K12A Search Results

RK09K12A0

Abstract: RK09K1130 RK09K12A0A RK09K111-1-RV09 RK09K12C0 RK09K1110 RK09K111 RK09K113 RK09D113 RK09D1110
Contextual Info: Insulated Shaft Potentiometer 9mm Size Insulated Shaft Snap-in Type RK09K/RK09D Series Compact type potentiometer with 9.8mm width is ideal for designing high density sets. Rotary Potentiometers Typical Specifications Items Total resistance tolerance Specifications

K12A50D

Abstract: TK12A50D K12a50 K12A50D* VDD400 K*A50D
Contextual Info: K12A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A50D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.45 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0S (標準)

K12A60U

Abstract: TK12A60U k12a60 code MCV marking MCV
Contextual Info: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)

K12A53D

Abstract: TK12A53D
Contextual Info: K12A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A53D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.5Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)

K12A50D

Abstract: K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A
Contextual Info: K12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

R6522P

Abstract: 4320N24-U DBX 2180 k15a that4320 EC10N compressor inverter ac -dc oa1 transistor JESD22-A113-B K12A
Contextual Info: Pre-trimmed Low-voltage Low-power Analog Engine Dynamics Processor IC THAT 4320 FEATURES APPLICATIONS • Pre-trimmed VCA & RMS detector • Companding noise reduction • Wide supply voltage range: 4.5V~16V • Wireless microphones • Low supply current: 3.7mA typ. 5V

K12D

Abstract: K12DK K12A K12C K12P K12KB K12G K12C 1 5N
Contextual Info: K12 High Performance Key Switches Features/Benefits Typical Applications • Excellent tactile feel • Wide choice of LED colors, travel and actuator forces • High reliability / long life • Sealed version available • Designed for low-level switching

5N500

Abstract: ESM K12 1 5N 1M C dust cap K12A L130
Contextual Info: ESM and DSM Single and Double Switch Modules The single switch module ESM and the double switch module DSM are readyto-be-installed units, consisting of: ț Switch: K12, K12G or PVA1H4; the K12G switch has two snap-points and can only be used in DSM. PVA1H4 only to be used in ESM.

RK09K1130

Abstract: rotary potentiometer dual alps RK09K alps 203 Potentiometers AC Potentiometers alps RK09d rotary potentiometer dual 12mm RK09K12C0d RK09K12A alps 103 Potentiometers
Contextual Info: Insulated Shaft Potentiometer 9mm Size Insulated Shaft Snap-in Type RK09K/RK09D Series Compact type potentiometer with 9.8mm width is ideal for designing high density sets. Rotary Potentiometers Typical Specifications Items Specifications Total resistance

Contextual Info: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

Contextual Info: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)

Contextual Info: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

Contextual Info: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.43 High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)

K12A55D

Contextual Info: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

RK09K12A0

Abstract: RK09K12C0d alps 103 Potentiometers rotary potentiometer dual alps hollow shaft potentiometer RK09K RK09D113 alps 503 a RK09K1110 alps RK09d
Contextual Info: Insulated Shaft Potentiometer 9mm Size Insulated Shaft Snap-in Type RK09K/RK09D Series Compact type potentiometer with 9.8mm width is ideal for designing high density sets. Features ● Closed structure improves dust and flux resistance. Applications ● ●

4320S

Abstract: one band compander circuit application DBX 2180 478 processor pinout datasheet antilog amplifier dbx noise reduction ota opamp audio compressor expander IC audio limiter analog JESD22-A113
Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

Contextual Info: K12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 550 V)

K12A60D

Abstract: TK12A60D
Contextual Info: K12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)

K12A60U

Abstract: k12a60 TK12A60U VDS208
Contextual Info: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)

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K68A

Contextual Info: 1.0SMB SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – 1.0SMB SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.

BV15C

Abstract: RK09K12C ON503 RK09K12C0d RK09D RK09K12A RK09K12C0A2S RK09K1130A5R K113 SP386
Contextual Info: 絶縁軸ボリューム 9型絶縁軸スナップインタイプ RK09K/RK09Dシリーズ 本体幅9.8mmの小型タイプで高密度セット設計に対応。 主な仕様 項目 全抵抗値許容差 最高使用電圧 全回転角度 ロータリ ボリューム