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    K12A60D Search Results

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    K12A60D Price and Stock

    Toshiba America Electronic Components TK12A60D(STA4,Q,M)

    MOSFET N-CH 600V 12A TO220SIS
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    DigiKey TK12A60D(STA4,Q,M) Tube 84 1
    • 1 $3.45
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    Avnet Americas () TK12A60D(STA4,Q,M) Bulk 16 Weeks, 3 Days 1
    • 1 $3.03
    • 10 $2.52
    • 100 $2
    • 1000 $1.44
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    TK12A60D(STA4,Q,M) Tube 16 Weeks 50
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    • 100 $1.14192
    • 1000 $1.08336
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    Mouser Electronics TK12A60D(STA4,Q,M) 104
    • 1 $3.41
    • 10 $3.36
    • 100 $1.79
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    Newark TK12A60D(STA4,Q,M) Bulk 2,403 1
    • 1 $3.12
    • 10 $2.54
    • 100 $1.65
    • 1000 $1.25
    • 10000 $1.22
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    EBV Elektronik TK12A60D(STA4,Q,M) 19 Weeks 50
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    K12A60D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K12A60D

    Abstract: TK12A60D
    Contextual Info: K12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D PDF

    k12a60

    Abstract: k12a60d
    Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60 k12a60d PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A
    Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data
    Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data PDF

    K12A60D

    Abstract: TK12A60D k12a60
    Contextual Info: K12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60 PDF

    k12a60d

    Contextual Info: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60d PDF