K347 Search Results

K3473

Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

k3472

Abstract: 2SK3472
Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

k3472

Abstract: 2SK3472 MJ103
Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

SK3466

Abstract: SK3559 SK3444 SK3441 SK3528 SK3710 SK3452 sk3444 transistors SK3467 SK3642
Contextual Info: TH OM S O N / D I S T R I B U T O R I B IPO LAR TRANSISTORS 5ÖE D • = 1 0 ^ 0 7 3 Q004flPl 5T5 ■ TCSK com. Maximum Ratings K E Type Device Polarity & Material Breakdown Voltages Application 'complementary device type SK3441 Device Power Dissipata Collector

transistor m1104

Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
Contextual Info: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms

transistor k2333

Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
Contextual Info: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression

TOSHIBA K3473

Abstract: k3473 2SK3473 K347 SC-65
Contextual Info: K3473 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3473 スイッチングレギュレータDC−DC コンバータ用 モータドライブ用 単位: mm : RDS (ON) = 1.3Ω (標準) オン抵抗が低い。 : |Yfs| = 6.5S (標準)

Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

K3472

Abstract: 2SK3472
Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA K3473

Abstract: toshiba transistor k3473 transistor k3473 K3473
Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)

k3473

Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65
Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

K3472

Abstract: 2SK3472
Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) · High forward transfer admittance: |Yfs| = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

K1047

Abstract: NTCS0603E3 SS0805 C3964 5x222 NTCS0402E3223 103 ntc K347
Contextual Info: V i s hay I n t e r t echn o l o g y, I nc . NTHS a nd NTCS Se r ie s Key Benefits • Nickel/tin and tin/lead terminations available • Wraparound terminations • Allows design flexibility for use with hybrid circuitry • High-density monolithic construction

PCS17 SHARP

Abstract: PCS17 SHARP pcs17 PC817 VDE PC847 sharp PC317 EK24 PC-847 PC317 k347a
Contextual Info: SPEC DATE: PREPAREDBY: sw ,qlta-id ll.wudr4, r’w DATE: APPROVED By: 7. pL EIAEmRoNIc COMPONENTS GROUP SHARP CORPORATION A+p~T DEVICE SPECXFICATION ED-92013A ISSUE August PAW l~paga. FtEPFUC3ENTATIVE DIVISION DEXICES DIV. FOR _.- gwfnwsdealing.e-‘-.:.

K3473

Abstract: TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473
Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

2SK3472

Abstract: K3472
Contextual Info: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)

k3473

Abstract: K347 TOSHIBA K3473 2SK3473 SC-65 2SK347 transistor k3473
Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)

k3332

Abstract: k3562 k3102 k2333 k1271 k3272 K1124 K2182 k3561 K1153
Contextual Info: Multilayer Chip Capacitors X7R Features • ■ ■ ■ High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength Applications ■ ■ ■ ■ Blocking Coupling Decoupling Interference suppression Terminations

K3472

Abstract: 2SK3472
Contextual Info: K3472 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3472 単位: mm ○ スイッチングレギュレータ用 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0. 2 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.8 S (標準)

K3473

Abstract: TOSHIBA K3473 2SK3473
Contextual Info: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

K3472

Abstract: 2SK3472
Contextual Info: K3472 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3472 単位: mm ○ スイッチングレギュレータ用 1.5 ± 0. 2 6.5 ± 0.2 5.2 ± 0.2 取り扱いが簡単なエンハンスメントタイプです。 : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

transistor k2333

Abstract: k2333 k3562 k3332 transistor k2182 k2182 k3272 K3561 transistor k1102 K0392
Contextual Info: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression