K4B2G0846DHCK0 Search Results

K4B2G0846D

Abstract: K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D K4B2G0446D-HCH9
Contextual Info: Rev. 1.1, Sep. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Product Specifications PART NO.: VL31B1G63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

K4B2G0846D-HCK0

Abstract: k4b2g0846dhck0 K4B2G0846D-HCMA tis87
Contextual Info: Rev. 1.11, Nov. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

K4B2G0846D-HCH9

Abstract: K4B2G0846D-HCMA K4B2G0846D-HCK0 K4B2G0446D-HCH9 K4B2G0846D K4B2G0846D-HCF8 K4B2G0446D K4B2G0446D-HCK0 K4B2G0446D-HCMA DDR3-1866
Contextual Info: Rev. 1.13, May. 2011 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Product Specifications PART NO.: VL31B1K63A-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1K63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

Contextual Info: Product Specifications PART NO.: VL31B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B5263A is a 512Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

K4B2G0846D-HCK0

Abstract: 240-PIN DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D-HC
Contextual Info: Product Specifications PART NO.: VL31B5263F-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ULP ECC UNBUFFERED DIMM 240-PIN Description The VL31B5263F is a 512Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of

K4B2G0846D-HCK0

Abstract: DDR3-1333 DIMM Spec K4B2G0846D K4B2G samsung K9 samsung dimm DDR3 SPD 240-PIN DDR3-1066 DDR3-1333 PC3-10600
Contextual Info: Product Specifications PART NO.: VL31B1G63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

K4B2G0846D-HCK0

Abstract: K4B2G0846D-HC K4B2G0846D-HCK 240-PIN DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 SAMSUNG UDIMM DDR3 A1185
Contextual Info: Product Specifications PART NO.: VL31B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B5263A is a 512Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

Contextual Info: Product Specifications PART NO.: VL41B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module is dual rank, consists

Contextual Info: Product Specifications PART NO.: VL31B5263F-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ULP ECC UNBUFFERED DIMM 240-PIN Description The VL31B5263F is a 512Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of

DDR3-1066

Abstract: K4B2G0846D-HCK0 240-PIN DDR3-1333 PC3-10600 PC3-12800 samsung DDR3 SDRAM 2GB
Contextual Info: Product Specifications PART NO.: VL31B1K63A-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1K63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge

VL41

Abstract: DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D-HCK0
Contextual Info: Product Specifications PART NO.: VL41B5263A-K0/K9/F8/E7S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module is dual rank, consists

K4B2G0446D

Contextual Info: Rev. 1.13, May. 2011 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed