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Samsung Semiconductor K4S281632E-TC75T00
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Bristol Electronics	K4S281632E-TC75T00		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S281632E-TC75
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Bristol Electronics	K4S281632E-TC75		1,039			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S281632ETL75
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Bristol Electronics	K4S281632ETL75		845			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S281632E-TL75
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Bristol Electronics	K4S281632E-TL75		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S281632ETC75
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Bristol Electronics	K4S281632ETC75		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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K4S281632E Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
K4S281632E		Samsung Electronics	K4S281632E 8M x 4-Bit x 4 Banks / 4M x 8-Bit x 4 Banks / 2M x 16-Bit x 4 Banks Sdram, Organization = 8Mx16, Bank/ Interface = 4B/LVTTL, Refresh = 4K/64ms, Speed = 60,75, Package = 54TSOP2, Power = C,l, Production Status = Mass Production		Original	PDF	145.12KB	14
K4S281632E-TC60		Samsung Electronics	128Mb SDRAM, 3.3V, LVTTL, 166MHz		Original	PDF	145.12KB	14
K4S281632E-TC75		Samsung Electronics	128Mb SDRAM, 3.3V, LVTTL, 166MHz		Original	PDF	145.12KB	14
K4S281632E-TC7C		Samsung Electronics	2M x 16-Bit x 4 banks synchronous DRAM LVTTL, 133MHz		Original	PDF	59.79KB	11
K4S281632E-TC(L)60		Samsung Electronics	128Mb E-die SDRAM Specification		Original	PDF	145.12KB	14
K4S281632E-TCL60		Samsung Electronics	128Mb SDRAM, 3.3V, LVTTL, 166MHz		Original	PDF	145.12KB	14
K4S281632E-TC(L)75		Samsung Electronics	128Mb E-die SDRAM Specification		Original	PDF	145.12KB	14
K4S281632E-TCL75		Samsung Electronics	128Mb SDRAM, 3.3V, LVTTL, 133MHz		Original	PDF	145.12KB	14
K4S281632E-TL60		Samsung Electronics	128Mb E-die SDRAM Specification		Original	PDF	145.12KB	14
K4S281632E-TL75		Samsung Electronics	128Mb E-die SDRAM Specification		Original	PDF	145.12KB	14
K4S281632E-TL7C		Samsung Electronics	2M x 16-Bit x 4 banks synchronous DRAM LVTTL, 133MHz		Original	PDF	59.79KB	11

K4S281632E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K4S281632E Contextual Info: K4S281632E CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 1.0 Nov. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 Nov. 2002 K4S281632E CMOS SDRAM Revision History Revision 1.0 Nov., 2002	Original	K4S281632E 128Mbit 16Bit K4S281632E A10/AP	PDF
M366S0924ETS-C7A Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A Contextual Info: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002	Original	128MB, 256MB 168pin 128Mb 62/72-bit M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A	PDF
K4S281632E Contextual Info: 64MB Unbuffered uSODIMM SDRAM SDRAM Unbuffered uSODIMM 144pin Unbuffered uSODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB Unbuffered uSODIMM SDRAM Revision History Revision 1.0 (Nov., 2002) - First release Revision 1.1 (May, 2003)	Original	144pin 128Mb 64-bit 133MHz. 144Pi M463S0924ET1-C 8Mx16 K4S281632E) 133MHz K4S281632E	PDF
Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.3 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 January. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM	Original	128Mb x4/x8/x16 110mA 140mA 166MHz. 16Bit A10/AP	PDF
K4S280432E Abstract: K4S281632E TL 2262 decoder Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM	Original	128Mb x4/x8/x16 110mA 140mA 166MHz. A10/AP K4S280432E K4S281632E TL 2262 decoder	PDF
K4S280432E Abstract: K4S281632E Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History	Original	128Mb x4/x8/x16 16Bit A10/AP K4S280432E K4S281632E	PDF
M374S3323ETS-C7A Abstract: M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A MA2180 Contextual Info: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die x8, x16 62/72-bit Non ECC/ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 (Nov., 2002)	Original	128MB, 256MB 168pin 128Mb 62/72-bit M374S3323ETS-C7A M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A MA2180	PDF
Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 (Nov., 2002) - First release	Original	128MB 144pin 64-bit M464S0924ETS-C M464S1724ETS-C	PDF
K4S281632E Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die 64-bit Non ECC Revision 1.4 March. 2004 Rev. 1.4 March. 2004 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 November, 2002 - First release	Original	128MB 144pin 64-bit M464S0924ETS-C 8Mx16 K4S281632E	PDF
Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.1 April. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 Apr. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History	Original	128Mb x4/x8/x16 16Bit A10/AP	PDF
Contextual Info: M366S0924ETS PC133 Unbuffered DIMM M366S0924ETS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M366S0924ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	Original	M366S0924ETS M366S0924ETS PC133 8Mx64 8Mx16, 400mil 168-pin	PDF
Contextual Info: M464S0924ETS PC133 SODIMM M464S0924ETS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous GENERAL DESCRIPTION FEATURE The Samsung M464S0924ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	Original	M464S0924ETS M464S0924ETS PC133 8Mx64 8Mx16, M464S0924DTE 400mil 144-pin	PDF
Contextual Info: PC133 µSODIMM M463S0924ET1 8Mx64 SDRAM µSODIMM Revision 0.0 Nov. 2002 Rev. 1.0 Nov. 2002 M463S0924ET1 PC133 µSODIMM Revision History Revision 0.0 Nov.,2002 Rev. 1.0 Nov. 2002 PC133 µSODIMM M463S0924ET1 M463S0924ET1 SDRAM µ SODIMM 8Mx64 SDRAM µSODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs	Original	M463S0924ET1 PC133 8Mx64 M463S0924ET1 400mil	PDF
K4S281632E Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die 64-bit Non ECC Revision 1.3 February. 2004 Rev. 1.3 February. 2004 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 November, 2002	Original	128MB 144pin 64-bit M464S0924ETS-C 8Mx16 K4S281632E	PDF