K4S511632 Search Results

K4S511632D

Contextual Info: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

K4S511632C

Abstract: samsung cmos dram 4m x 4
Contextual Info: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations

K4S511632

Abstract: K4S511632M
Contextual Info: K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S511632M CMOS SDRAM Revision History Revision 0.0 Mar. 2001

K4S511632B-TC75

Abstract: M464S6554BTS-C7A "at command" Samsung K4S511632
Contextual Info: SERIAL PRESENCE DETECT M464S6554BTS-C7A Organization :64Mx64 Composition :32M x 16* 8ea Used component part # :K4S511632B-TC75 # of rows in module:2 Rows # of banks in component :4 banks Feature :1250mil height & double sided Refresh :8K/64ms Contents : Byte #

K4S511632B-TC75

Abstract: M464S3354BTS-C7A intel date code format
Contextual Info: SERIAL PRESENCE DETECT M464S3354BTS-C7A Organization :32Mx64 Composition :32M x 16* 4ea Used component part # :K4S511632B-TC75 # of rows in module:1 Row # of banks in component :4 banks Feature :1250mil height & single sided Refresh :8K/64ms Contents : Byte #

K4S511632M

Contextual Info: Preliminary CMOS SDRAM K4S511632M 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S511632M Preliminary CMOS SDRAM

K4S510832D

Abstract: K4S510432D k4s511632d K4S511632D-UC
Contextual Info: K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K4S511632C

Contextual Info: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

54-TSOP

Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

samsung capacitance Manufacturing location

Contextual Info: PC100/PC133 µSODIMM M463S3254CK1 32Mx64 SDRAM µSODIMM Revision 0.2 Sept. 2001 Rev. 0.2 Sept. 2001 M463S3254CK1 PC100/PC133 µSODIMM Revision History Revision 0.0 July 2001 • First published. Revision 0.1 (Aug. 2001) • SPD correction Revision 0.2 (Sept. 2001)

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

K4S641632k uc60

Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
Contextual Info: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM

Contextual Info: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

K4S511632B-UC75

Abstract: K4S511632B-UL75 K4S511632B K4S510432B-UC
Contextual Info: CMOS SDRAM SDRAM 512Mb B-die x4, x8, x16 512Mb B-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Revision. 1.1 August 2004

K4S511632D

Abstract: SH7203 SH7263 0C00 EDS1216AGTA resistor SH2A K4S511632
Contextual Info: APPLICATION NOTE SH7263/SH7203 Groups Example of BSC SDRAM Interface Connection 16-Bit Data Bus Introduction This application note describes the synchronous DRAM (SDRAM) interface of the bus state controller (BSC) and provides a practical example of connection with a data-bus width of 16 bits.

M464S6554MTS

Abstract: M464S6554MTS-C1H M464S6554MTS-C1L M464S6554MTS-C75 32MX16 K4S511632M
Contextual Info: Preliminary PC133/PC100 SODIMM M464S6554MTS M464S6554MTS SDRAM SODIMM 64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S6554MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

hynix hy57v281620

Abstract: HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C
Contextual Info: UM10208 LPC2880/LPC2888 User manual Rev. 02 — 1 June 2007 User manual Document information Info Content Keywords LPC2880, LPC2888, LPC288x, ARM, ARM7, embedded, 32-bit, microcontroller, USB 2.0, USB HS Abstract LPC288x User manual UM10208 NXP Semiconductors

PC133 133Mhz cl3

Abstract: intel date code format
Contextual Info: PC100/PC133 µSODIMM M463S3254DK1 M463S3254DK1 SDRAM µ SODIMM 32Mx64 SDRAM µSODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S3254DK1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

K4S511632B

Abstract: M464S3354BTS-C
Contextual Info: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

K4S511632D-UC

Abstract: K4S510832D K4s511632D k4s511632duc K4S511632D-UL K4S5 K4S511632D-UCL K4S510832 k4s511632d-u K4S510832DUC
Contextual Info: SDRAM 512Mb D-die x4, x8, x16 CMOS SDRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4S511632B

Abstract: K4S510432B-TC
Contextual Info: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM