K4S5616 Search Results

K4S5616 Datasheets (90)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K4S561632A	Samsung Electronics	256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL	Original	PDF	127.65KB	10
K4S561632A-TC/L1H	Samsung Electronics	4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL.	Original	PDF	127.65KB	10
K4S561632A-TC/L1L	Samsung Electronics	4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL.	Original	PDF	127.65KB	10
K4S561632A-TC/L75	Samsung Electronics	4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL.	Original	PDF	127.65KB	10
K4S561632A-TC/L80	Samsung Electronics	4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL.	Original	PDF	127.65KB	10
K4S561632B	Samsung Electronics	256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL	Original	PDF	132KB	11
K4S561632B-TC/L	Samsung Electronics	4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet	Original	PDF	131.99KB	11
K4S561632B-TC-L	Samsung Electronics	4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet	Original	PDF	131.99KB	11
K4S561632B-TC/L1H	Samsung Electronics	4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL.	Original	PDF	131.99KB	11
K4S561632B-TC/L1L	Samsung Electronics	4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL.	Original	PDF	131.99KB	11
K4S561632B-TC/L75	Samsung Electronics	4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL.	Original	PDF	131.99KB	11
K4S561632B-TC/L, TI/P	Samsung Electronics	4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet	Original	PDF	131.99KB	11
K4S561632B-TI-P	Samsung Electronics	4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet	Original	PDF	131.99KB	11
K4S561632C	Samsung Electronics	K4S561632C 4M x 16-Bit x 4 Banks Synchronous DRAM, Organization = 16Mx16, Bank/ Interface = 4B/LVTTL, Refresh = 8K/64ms, Speed = 60,7C,75,1H,1L, Package = 54TSOP2, Power = B,i,p,e,n, Production Status = Mass Production, Comments = ICC6=800uA	Original	PDF	113.64KB	11

K4S561632C-L60	Samsung Electronics	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM	Original	PDF	114.36KB	11
K4S561632C-L7C	Samsung Electronics	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM	Original	PDF	114.36KB	11
K4S561632C-TC	Samsung Electronics	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM	Original	PDF	114.36KB	11
K4S561632C-TC75	Samsung Electronics	IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC	Original	PDF	114.38KB	11
K4S561632D	Samsung Electronics	4M x 16-Bit x 4 Banks Synchronous DRAM Data Sheet	Original	PDF	113.17KB	11
K4S561632D	Samsung Electronics	256Mbit SDRAM 4M x 16-Bit x 4 Banks	Original	PDF	60.93KB	11

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Samsung Semiconductor K4S56163PF-BG75
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Bristol Electronics	K4S56163PF-BG75		366			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S561632J-UC60
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Bristol Electronics	K4S561632J-UC60		284			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S561633C-RL75
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Bristol Electronics	K4S561633C-RL75		205			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S561632J-UL75000
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Bristol Electronics	K4S561632J-UL75000		121			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S561632A-TL1L
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Bristol Electronics	K4S561632A-TL1L		82			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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K4S5616 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K4S56163LC Contextual Info: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.	Original	K4S56163LC-R 16Mx16 54CSP 16Bit K4S56163LC	PDF
K4S561633C Contextual Info: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.	Original	K4S561633C-R 16Mx16 54CSP 16Bit K4S561633C	PDF
K4S561633F Abstract: K4S561633F-X Contextual Info: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,	Original	K4S561633F 16Bit 54BOC K4S561633F-X	PDF
K4S561632C-TC/L75 Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History	Original	K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC/L75 K4S561632C K4S561632C-TC K4S561632C-TC/L7C	PDF
K4S561633C Abstract: K4S561633C-RL Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).	Original	K4S561633C-RL 16Mx16 54CSP 256Mb K4S561633C	PDF
K4S561632C Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM	Original	K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C	PDF
Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RF(R) CMOS SDRAM 16Mx16 Mobile SDRAM (TCSR & PASR option support) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RF(R) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target)	Original	K4S56163LC-RF 16Mx16 256Mb	PDF
K4S561633C-RLN Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 1.0 February 2001 Rev. 1.0 Feb. 2002 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).	Original	K4S561633C-RL 16Mx16 54CSP 256Mb K4S561633C-RLN	PDF
samsung capacitance year code Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	K4S561632J 256Mb A10/AP samsung capacitance year code	PDF
K4S561632N Abstract: K4S561632N-LC K4S560832N-LC K4S560832N K4S560432N-LC K4S560432N K4S560832Nlc K4S5604 Contextual Info: Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N 256Mb N-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed	Original	K4S560432N K4S560832N K4S561632N 54TSOP 256Mb A10/AP K4S561632N K4S561632N-LC K4S560832N-LC K4S560432N-LC K4S560832Nlc K4S5604	PDF
K4S56163LC Contextual Info: K4S56163LC-R B F/R CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)F/R CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.	Original	K4S56163LC-R 16Mx16 54CSP 16Bit K4S56163LC	PDF
Contextual Info: CMOS SDRAM K4S56163LC-RL/N/P 16Mx16 SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S56163LC-RL/N/P CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).	Original	K4S56163LC-RL/N/P 16Mx16 54CSP 256Mb 54CSP 95xVDDQ -75/-1L	PDF
K4S561632C-TC75 Abstract: K4S561632C-TC1L Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Mar. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001	Original	K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC75 K4S561632C-TC1L	PDF
Contextual Info: CMOS SDRAM K4S56163LC-RG/S 16Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S56163LC-RG/S CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target) • First generation of 256Mb Low Power SDRAM having TCSR option. (V DD 2.5V, V DDQ 1.8V).	Original	K4S56163LC-RG/S 16Mx16 54CSP 256Mb	PDF

K4S561632C-TC Abstract: K4S561632CTC k4s561632c Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 Jun 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 Jun 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001	Original	K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC K4S561632CTC k4s561632c	PDF
Contextual Info: V DD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 V DD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RL(N) CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).	Original	K4S56163LC-RL 16Mx16 54CSP 256Mb 54CSP 95xVDDQ -75/-1L	PDF
K4S561632C Abstract: K4S561632C-TB75 k4s561632c-tb7c 2CLK Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Super low power 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S561632C CMOS SDRAM Revision History	Original	K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C K4S561632C-TB75 k4s561632c-tb7c 2CLK	PDF
K4S561632J-UC Abstract: K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u Contextual Info: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J-UC K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u	PDF
K4S561632J Abstract: K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616 Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	K4S561632J 256Mb A10/AP K4S561632J K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616	PDF
K4S561632J Abstract: k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC Contextual Info: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC	PDF
K4S561632B Contextual Info: Preliminary K4S561632B-TI P CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2001 Preliminary K4S561632B-TI(P)	Original	K4S561632B-TI 256Mbit 16bit 256Mb K4S561632B	PDF
K4S56163LC Contextual Info: VDD 2.5V, VDDQ 1.8V & 2.5V K4S56163LC-RL(N) CMOS SDRAM 16Mx16 SDRAM 54CSP Revision 0.1 November 2001 Rev. 0.1 Nov. 2001 (VDD 2.5V, VDDQ 1.8V & 2.5V) K4S56163LC-RL(N) CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).	Original	K4S56163LC-RL 16Mx16 54CSP 256Mb 54CSP 16Bit K4S56163LC	PDF
Contextual Info: K4S56163LF - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,	Original	K4S56163LF 16Bit 54BOC	PDF
K4S561632H Abstract: K4S561632H-T samsung capacitance year code Contextual Info: Industrial Synchronous DRAM K4S561632H 256Mb H-die SDRAM Specification Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K4S561632H 256Mb A10/AP K4S561632H K4S561632H-T samsung capacitance year code	PDF

K4S5616 Search Results

K4S5616 Datasheets (90)

K4S5616 Price and Stock

Samsung Semiconductor K4S56163PF-BG75

Samsung Semiconductor K4S561632J-UC60

Samsung Semiconductor K4S561633C-RL75

Samsung Semiconductor K4S561632J-UL75000

Samsung Semiconductor K4S561632A-TL1L

K4S5616 Datasheets Context Search

K4S56163LC

K4S561633C

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K4S561632C-TC/L75

K4S561633C

K4S561632C

K4S561633C-RLN

samsung capacitance year code

K4S561632N

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K4S561632C-TC75

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K4S561632B

K4S56163LC

K4S561632H