K4S640832E Search Results

Contextual Info: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM

Contextual Info: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM

Contextual Info: IC INFORMATION Function SDRAM CMOS Type J 1/1 E GEX-FM903XM/UC K4S640832E-TL1H Model VDD 1 54 VSS DQ0 2 53 DQ7 VDDQ 3 52 VSSQ NC 4 DQ1 5 VSSQ 6 NC 7 DQ2 8 VDDQ 9 NC 10 DQ3 11 VSSQ 12 NC 13 51 NC A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ7 : Data input/output

M374S1623ET0

Abstract: M374S1623ET0-C1L
Contextual Info: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: M366S1623ETS PC133/PC100 Unbuffered DIMM M366S1623ETS SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623ETS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

CDC2509

Contextual Info: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Rev. 0.1 Jan. 2001 PC100 Registered DIMM M377S0823ET3 M377S0823ET3 SDRAM DIMM (Intel 1.2 ver. Base)

M366S0823ETS

Abstract: M366S0823ETS-C1L
Contextual Info: M366S0823ETS PC100 Unbuffered DIMM M366S0823ETS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

PC133 registered reference design

Contextual Info: M390S0823ET1 PC133 Registered DIMM M390S0823ET1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S0823ET1 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

support pc133 sdram

Contextual Info: M366S0823ETS PC133/PC100 Unbuffered DIMM M366S0823ETS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: M374S1623ETS PC133/PC100 Unbuffered DIMM M374S1623ETS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ETS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

CDC2509

Abstract: samsung capacitance year code
Contextual Info: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.

Contextual Info: M374S0823ETS PC133/PC100 Unbuffered DIMM M374S0823ETS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S0823ETS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

M374S0823ETS

Abstract: M374S0823ETS-C1H M374S0823ETS-C1L
Contextual Info: M374S0823ETS PC100 Unbuffered DIMM M374S0823ETS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S0823ETS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

M366S1623ET0

Abstract: M366S1623ET0-C1H M366S1623ET0-C1L
Contextual Info: M366S1623ET0 PC100 Unbuffered DIMM M366S1623ET0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623ET0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M366S1623ET0

Abstract: M366S1623ET0-C75
Contextual Info: M366S1623ET0 PC133 Unbuffered DIMM Revision History Revision 0.0 Dec, 2000 • PC133 first published. REV. 0.0 Dec, 2000 M366S1623ET0 PC133 Unbuffered DIMM M366S1623ET0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD