KC3P Search Results

cc 052

Contextual Info: TO SH IBA THMD51E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59SM803BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDS X4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

Contextual Info: T O S H IB A THMY7280H1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280H1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM716FT DRAMs and an unbuffer on a printed circuit board.

133M

Abstract: TC59S6432DFT A10rA
Contextual Info: TOSHIBA TC59S6432DFTI/DFTLI-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON MONOLITHIC 524.288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432DFTI/DFTLI is a CMOS synchronous dynamic random access memory organized as 524.288-wordsX4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of

Contextual Info: TOSHIBA THMY12N11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11A is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.

THLY12N11C70

Contextual Info: TOSHIBA THLY12N11C70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT/CFTL DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THMY7216H1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216H1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA T H M Y 2 5 N 1 1B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7240F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7240F1BEG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

4N 26 TFK

Contextual Info: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

lyvi

Contextual Info: TO SHIBA THLY648031FG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648031FG is a 8,388,608-word by 64-bit synchronous dynam ic RAM module consisting of eight TC59S6408FT DRAMs on a printed circuit board.

Contextual Info: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75#-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

Contextual Info: TO SHIBA THLY644031BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY644031BFG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT/BFTL DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THLY25N01 B70f70Lf75f75Lf80f80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816BFT/BFTL DRAMs on a printed circuit board.

lm 524n

Abstract: 2095H
Contextual Info: TO SH IBA TENTATIVE THLG645111 AFG-8,-10,-12 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 524n 288-WORD BY 64-BIT SYNCHRONOUS GRAPHICS RAM MODULE DESCRIPTION The THLG645111AFG is a 524,288-word by 64-bit synchronous graphics RAM module consisting of two TC59G1631AFB SGRAMs on a printed circuit board.

TOSHIBA MG75

Abstract: TC59SM716FT
Contextual Info: TO SH IBA THLY6480X1 M G -7 5 #-75L#-80#-80L TENTATIVE TOSHIBA HYBRID DIGI rAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480X1MG is a 8,388,608-word by 6- -bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circ ait board.

Contextual Info: TOSHIBA THMY643281 EG-80f-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY643281EG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S64M708FT/FTL DRAMs on a printed circuit board.

TC59SM716FT

Contextual Info: TO SH IBA THMY648091 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648091EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.

semiconductor 80L

Contextual Info: TOSHIBA THLY6416G1FG-75,-75L,-80,-80L ABSOLUTE M AXIM UM RATINGS SYMBOL ITEM RATING UNIT NOTES V IN Input Voltage - 0 .3 - V DD + 0.3 V 1 VOUT Output Voltage - 0 . 3 - V DD + 0.3 V 1 V dd Power Supply Voltage -0.3 - 4 .6 V 1 t opr Operating Temperature 0-70

70l7

Contextual Info: TO SH IBA T H M Y 6 4 E 1 1A 7 0 #70L,75f75L#80#80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY64E11A is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of 5

D018

Abstract: D019 D032
Contextual Info: T O S H IB A THMY25N01A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH M Y25N 01A is a 33,554,432-w ord by 64-bit synchronous dynamic RAM module consisting of 16 TC 59SM 708A FT/A FTL DRAMs and an unbuffer on a printed circuit board.