KDS160 Search Results

Contextual Info: SEMICONDUCTOR KDS160F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : TFSC. Low forward voltage. C D Fast reverse recovery time. Small total capacitance. DIM A B C D E F B A MAXIMUM RATING Ta=25

KDS160

Abstract: marking UF
Contextual Info: SEMICONDUCTOR KDS160 MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking UF 0 1 2 1 No. Item Marking Description Device Mark UF KDS160 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KDS160F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2013. 1. 3 Revision No : 1 1/2

Contextual Info: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. K L H F ・Fast Reverse Recovery Time. A ・Low Forward Voltage. 1 E ・Small Package : USC. G B CATHODE MARK FEATURES ・Small Total capacitance. 2

Contextual Info: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Total capacitance. G 1 G ・Fast Reverse Recovery Time. E C A ・Low Forward Voltage. B CATHODE MARK ・Small Package : ESC. 2 D F

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KDS160

Contextual Info: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ᴌFast Reverse Recovery Time. A ᴌLow Forward Voltage. 1 E ᴌSmall Package : USC. G B CATHODE MARK FEATURES ᴌSmall Total capacitance. 2

Contextual Info: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F Fast Reverse Recovery Time. A Low Forward Voltage. 1 E Small Package : USC. G B CATHODE MARK FEATURES Small Total capacitance. 2 J D C I MAXIMUM RATING Ta=25

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KDS160E

Contextual Info: SEMICONDUCTOR KDS160E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking UF No. 2005. 7. 18 Item Marking Description Device Mark UF KDS160E Revision No : 0 1/1

Contextual Info: SEMICONDUCTOR KDS160V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : VSC. Low forward voltage. C D 1 2 Fast reverse recovery time. Small total capacitance. B DIM A B C D E F A MAXIMUM RATING Ta=25

KDS160E

Contextual Info: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌFast Reverse Recovery Time. ᴌSmall Total capacitance. E 1 A ᴌLow Forward Voltage. C B CATHODE MARK ᴌSmall Package : ESC. 2 D F MAXIMUM RATING Ta=25ᴱ

KDS160E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDS160E S il ic o n e p i t a x i a l p l a n a r t y p e d i o d e ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package : ESC. Low Forw ard Voltage. F ast Reverse Recovery Time. Small Total capacitance.

KDS160

Contextual Info: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ・Fast Reverse Recovery Time. A ・Low Forward Voltage. 1 E ・Small Package : USC. G B CATHODE MARK FEATURES ・Small Total capacitance. 2

KDS160F

Contextual Info: SEMICONDUCTOR KDS160F MARKING SPECIFICATION TFSC PACKAGE 1. Marking method Laser Marking 2. Marking 4 No. 2005. 12. 29 Item Marking Description Device Mark 4 KDS160F Revision No : 0 1/1

KDS160

Contextual Info: K EG KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDS160 SILICON EPITAXIAL PLANAR TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package : USC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance.

Contextual Info: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. E C 1 A Small Package : ESC. B CATHODE MARK FEATURES 2 D F MAXIMUM RATING Ta=25

KDS160

Contextual Info: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ᴌFast Reverse Recovery Time. A ᴌLow Forward Voltage. 1 E ᴌSmall Package : USC. G B CATHODE MARK FEATURES ᴌSmall Total capacitance. 2

amoled

Abstract: 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
Contextual Info: Block Function For Recommended Item Switching Diode / SBD KDS160F/V/E, KDS12□V/E, KDR7□0F/V/E MOSFET POWER KMA2D4P20S, KMA2D3P20S ZENER KDZ33EV BRT KRA3□□V/E MOSFET AUDIO MUTING MIC DISPLAY KMA2D4P20S, KMA2D3P20S BRT KRC28□U (KRC2□□S, KRC68□T)

KDS160E

Contextual Info: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast Reverse Recovery Time. Small Total capacitance. 1 A Low Forward Voltage. E C B CATHODE MARK Small Package : ESC. 2 D MAXIMUM RATING Ta=25

KDS160V

Contextual Info: SEMICONDUCTOR KDS160V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : VSC. Low forward voltage. C D 1 2 Fast reverse recovery time. Small total capacitance. B DIM A B C D E F A MAXIMUM RATING Ta=25

KDS160V

Contextual Info: SEMICONDUCTOR KDS160V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking UF No. 2005. 12. 29 Item Marking Description Device Mark UF KDS160V Revision No : 0 1/1

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A