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    KM416C1000 Search Results

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    KM416C1000 Price and Stock

    Samsung Semiconductor KM416C1000CT-L6

    FAST PAGE DRAM, 1MX16, 60NS, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416C1000CT-L6 110
    • 1 $12.033
    • 10 $8.022
    • 100 $7.4204
    • 1000 $7.4204
    • 10000 $7.4204
    		Buy Now

    Samsung Semiconductor KM416C1000BJ-6

    1M X 16 FAST PAGE DRAM, 60 ns, PDSO42
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416C1000BJ-6 57
    • 1 $14.247
    • 10 $9.498
    • 100 $8.7857
    • 1000 $8.7857
    • 10000 $8.7857
    		Buy Now
    KM416C1000BJ-6 10
    • 1 $11.25
    • 10 $5.625
    • 100 $5.625
    • 1000 $5.625
    • 10000 $5.625
    		Buy Now

    SEC KM416C1000CJ-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416C1000CJ-6 44
    • 1 $13.104
    • 10 $8.736
    • 100 $8.0808
    • 1000 $8.0808
    • 10000 $8.0808
    		Buy Now

    KM416C1000 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416C1000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM416C1000B Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BT-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BT-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BT-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BTL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BTL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BTL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000C Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000CJ-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000CJ-6 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-L-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF

    KM416C1000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km416c1200

    Abstract: KM416C1000C KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil km416c1200 KM416C1000C KM416C1200C KM416V1000C KM416V1200C

    C1000B

    Abstract: KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power


    Original     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 16Bit 1Mx16 C1000B KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B

    KM416C1000C

    Abstract: km416c1200 KM416V1200 KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil KM416C1000C km416c1200 KM416V1200 KM416C1200C KM416V1000C KM416V1200C

    KM416C1000C

    Abstract: KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil KM416C1000C KM416C1200C KM416V1000C KM416V1200C

    C1000B

    Abstract: 3020C
    Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BT 16Bit 1Mx16 7Tb4142 DD3D23b C1000B 3020C

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 GGlb343 S73 ■ SMGK KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		PDF GGlb343 KM416C1000 KM416C1000 130ns KM416C1000-8 150ns KM416C1000-10 100ns 180ns KM416C1000-7

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms

    Untitled

    Abstract: No abstract text available
    Text: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6


    OCR Scan     		PDF KM416C1OOOA/A-L/A-F KM416C1000A/A-L/A-F KM416C1 DQ1-DQ16 42-LEAD 44-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 16Bit 1Mx16 DQ8DQ15

    KM416C1000-7

    Abstract: No abstract text available
    Text: KM416C1000 CMOS DRAM 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance applications


    OCR Scan     		PDF KM416C1000 KM416C1000-7 KM416C1000-8 KM416C1000-10 100ns 130ns 150ns 180ns KM416C1000

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 DG23333

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BJ 1Mx16Bit 1Mx16 71bm4E 16C1000BJ 40SOJ 1000B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM416C1000 CMOS DRAM 1M x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C1000 is a CMOS high speed 1,048,576 b it x 16 D ynam ic Random A ccess Memory. Its de sig n is o p tim ized fo r high pe rform ance a p p lica tio n s


    OCR Scan     		PDF KM416C1000 KM416C1000 130ns 150ns 100ns 180ns KM416C1000-7 KM416C1000-8 KM416C1000-10

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode CM OS DRAMs. Fast Page M ode offers high speed random acce ss of m em ory ce lls w ithin the sam e row. Pow er su pply vo lta g e + 5 .0 V o r + 3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BT C MOS DR A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BT 1Mx16 000BT GD3D53b

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 1Mx16Bit 1Mx16 002D331

    KM416C1200a

    Abstract: km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode C M O S D RAM s. Fast P age M ode o ffe rs high speed random a c c e s s o f m em o ry ce lls w ith in th e sa m e row. P o w e r su p p ly vo lta g e + 5 .0 V o r + 3 .3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16 DQ8-DQ15 D020331 KM416C1200a km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C10G0 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1000 KM416C1000-7 KM416C1000-8 KM416C1000-10 130ns 150ns 180ns KM416C10G0 KM416C1000 200/js

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM416C1OOOL/LL • 7Tb4].4S GDlb3b5 134 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000L/LL is a CMOS high speed 1,048,576 b itx 16 Dynamic Random Access Memory.


    OCR Scan     		PDF KM416C1OOOL/LL KM416C1000L/LL 130ns KM416C10OOLVLL-8 150ns KM416C1OOOL/LL-10 100ns 180ns KM416C1000L/LL-7 KM416C1

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C1OOOA/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC KM416C1000A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1OOOA-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns


    OCR Scan     		PDF KM416C1OOOA/A-L/A-F KM416C1000A-6/A-L6/A-F6 110ns KM416C1OOOA-7/A-L7/A-F7 130ns KM416C1000A-8/A-L8/A-F8 150ns cycle/64ms cycle/128ms

    C-1000B

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 C-1000B

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1000BJ 1Mx16 40SOJ

    Untitled

    Abstract: No abstract text available
    Text: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF DQ0-DQ15 00303bS KM416C1200BT Tb4142 KM416C1200BT)