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Samsung Semiconductor KM416V4104CS-L5
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Bristol Electronics	KM416V4104CS-L5		14			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor KM416V4104CS-5
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Bristol Electronics	KM416V4104CS-5		6			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	KM416V4104CS-5		22			1 $7.5 10 $5.5 100 $5 1000 $5 10000 $5	Buy Now
	KM416V4104CS-5		9			1 $7.5 10 $3.75 100 $3.75 1000 $3.75 10000 $3.75	Buy Now
Samsung Semiconductor KM416V4104CS-6
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Bristol Electronics	KM416V4104CS-6		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	KM416V4104CS-6		9			1 $5.4 10 $2.7 100 $2.7 1000 $2.7 10000 $2.7	Buy Now
	KM416V4104CS-6		1			1 $5.4 10 $5.4 100 $5.4 1000 $5.4 10000 $5.4	Buy Now

KM416V4104C Datasheets (13)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM416V4104C		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out		Original	PDF
KM416V4104CS		Samsung Electronics	KMM366F804CS1 8Mx64 DRAM Dimm Using 4Mx16,8K&4K Refresh,3.3V, Density(MB) = 64, Organization = 8Mx64, Mode = Edo, Refresh = 4K/64ms, Speed(ns) = 50,60, #of Pin = 168, Component Composition = (4Mx16)*8+EEPROM, Production Status = Eol, Comments = Unbuffered		Original	PDF
KM416V4104CS-45		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out		Original	PDF
KM416V4104CS-5		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out		Original	PDF
KM416V4104CS-50		Samsung Electronics	4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns		Original	PDF
KM416V4104CS-6		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out		Original	PDF
KM416V4104CS-60		Samsung Electronics	4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns		Original	PDF
KM416V4104CS-L45		Samsung Electronics	4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power		Original	PDF
KM416V4104CS-L-45		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out		Original	PDF
KM416V4104CS-L-5		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out		Original	PDF
KM416V4104CS-L50		Samsung Electronics	4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power		Original	PDF
KM416V4104CS-L-6		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out		Original	PDF
KM416V4104CS-L60		Samsung Electronics	4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power		Original	PDF

KM416V4104C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal	Original	PDF	KM416V4004C KM416V4104C 16bit 4Mx16 400mil
KM416V4004C Abstract: KM416V4104C Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal	Original	PDF	KM416V4004C KM416V4104C 16bit 4Mx16 400mil KM416V4104C
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in	Original	PDF	KMM372F404CS KMM372F404CS 4Mx16 KMM372F404C 4Mx72bits 4Mx16bits 400mil 168-pin
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits	Original	PDF	KMM374F804CS1 KMM374F804CS1 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits	Original	PDF	KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin
4CS1 Abstract: No abstract text available Text: DRAM MODULE KMM366F80 8 4CS1 KMM366F80(8)4CS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4CS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4CS1 consists of eight CMOS 4Mx16bits	Original	PDF	KMM366F80 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin 4CS1
KM416V Abstract: No abstract text available Text: DRAM MODULE KMM374F404CS1 Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1998 DRAM MODULE Revision History Version 0.0 (Dec. 1998) • The 4th. generation of 64Mb DRAM components are applied to this module. KMM374F404CS1 DRAM MODULE KMM374F404CS1	Original	PDF	KMM374F404CS1 4Mx72 4Mx16 KMM374F404CS1 4Mx72bits KM416V
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM466F804CS1-L KMM466F804CS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804CS1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification	Original	PDF	KMM466F804CS1-L KMM466F804CS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil
KMM372F804CS Abstract: No abstract text available Text: KMM372F804CS DRAM MODULE KMM372F804CS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in	Original	PDF	KMM372F804CS KMM372F804CS 4Mx16 KMM372F804C 8Mx72bits 4Mx16bits 400mil 168-pin
KMM466F404CS2-L Abstract: No abstract text available Text: DRAM MODULE KMM466F404CS2-L KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification	Original	PDF	KMM466F404CS2-L KMM466F404CS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil
K and M Electronics Abstract: No abstract text available Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal	OCR Scan	PDF	KM416V4004C KM416V4104C 16bit 4Mx16 400mil K and M Electronics
Untitled Abstract: No abstract text available Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CM OS DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access tim e (-45, -5 or -6), power consum ption(N orm al	OCR Scan	PDF	KM416V4004C KM416V4104C 16bit