KM41C1600 Search Results

41C16000

Contextual Info: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 1 C 1 6 00 0 A /A L 7 A L L7 A S L is a high • Performance range: tRAC tCA C KM41C16000A/AL/ALL'ASL-5 50ns 13ns 90ns

Contextual Info: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time(-5,

Contextual Info: PRELIMINARY KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM41C16002A CMOS DRAM 16Mx1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • TTbMiME D D l b U T KM41C16002 4TE «SriG K CMOS DRAM 16Mx1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C16002 is a high speed CMOS 16,777,216 bit x 1 Dynam ic Random A ccess Memory. Its

K/KM41C16000B

Contextual Info: KM41C16000B, KM41V16000B CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: SAMSUNG ELECTRONICS I NC b7 E D • 7^4142 KM41C16001 DGlbOfl? Q B E ■ CMOS DRAM 1 6 M x 1 Bit CM O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C16001 is a CMOS high speed 16,777,216 bit x 1 Dynamic Random A ccess Memory. Its

Contextual Info: CMOS DRAM KM41C16000 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 1 6 0 0 0 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random A ccess M em ory. Its design is optim ized tor high perform ance applications

Contextual Info: KM41C16002A/AI_/ALL/ASL CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16002A/AL/ALL/ASL is a high speed CMOS 16,777,216 bit x 1 Dynamic Random Access Memory. Its design is optim ized for high

KM41C16000A

Contextual Info: KM41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit C M O S Dynamic R A M with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tC A C tnc KM41C16000A/AL/ALL/ASL-5 50ns 13ns 90ns KM41C16000A/AL/ALI7ASL-6 60ns 15ns 110ns KM41C16000A/AL/ALL/ASL-7

RH803

Contextual Info: KM41C16002 CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16002 is a high speed CMOS 16,777,216 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KMM5816000/T DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The S am sung KMM5816000/T is a 16M bit x 8 D ynam ic RAM high d e nsity m em ory m odule. The S am sung KMM5816000/T con sist o f eight KM41C16000H' DRAMs in 24-pin SOJ/TSOP II package m o unte d on a 30-pin

TAA 691

Contextual Info: KM41C16000C, KM41V16000C CMOS DRAM 16M x1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consumption(Normal or Low power) and

Contextual Info: KM41C16000L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM41C16000L-6 • • • • • • • • • • Í rac tcAc I rc 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8 80ns

Contextual Info: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 16,777,216 x 1 bit Fast Page M ode CM O S DRAMs. Fast Page M ode o ffe rs high speed random a cce ss of m em ory cells w ithin the sam e row. Pow er supply voltage + 5.0V o r +3.3V , access tim e(-5,

Contextual Info: KM41C16002A CMOS ORAM 16M x 1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package

Contextual Info: CMOS DRAM KM41C16002A/AL/ALL/ASL 16M x 1 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M 4 1 C 1 6 0 0 2 A /A L /A L L V A S L is a h ig h • Performance range: tR A C tC A C tR C KM41C16002A/AL7ALL/ASL-5

KM41C16000L-8

Contextual Info: CMOS DRAM KM41C16000L 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • • • • -I rac tcAc ÍRC KM41C16000L-6 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8

KM41C16001-8

Contextual Info: KM41C16001 CMOS DRAM 16M x1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: I rac tcAc ÍRC 60ns 15ns 110ns KM41C16001-7 70ns 20ns 130ns KM41C16001-8 80ns 20ns 150ns KM41C16001-6 • • • • • • • • •

Contextual Info: KM41C16000L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • • • I rc tRAC tcAC KM41C16000L-6 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8 80ns 20ns

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

Contextual Info: KM41C16000C, KM41V16000C CMOS DRAM 16M x1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consum ption(Norm al or Low power) and

31A11

Abstract: KM41C16000A A91E
Contextual Info: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 16,777,216 x 1 bit Fast Page M ode C M O S DRA M s. Fast Page M ode o ffe rs high speed random acce ss o f m em ory celis within th e sam e row. Pow er supply voltage + 5.0V o r +3.3V , access tim e(-5,