KM44V4000C Search Results

Contextual Info: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

KM44C4000C

Abstract: KM44C4100C KM44V4000C KM44V4100C V4100C
Contextual Info: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

C4000C

Contextual Info: KM44C4000C, KM44C4100C KM44V4000C, KM44V410QC CMOS ORAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs, Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref ), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-H) are optional features of this family. All of this family have CÀS-before-

Contextual Info: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power co

KM44C4000C

Abstract: KM44C4100C KM44V4000C KM44V4100C
Contextual Info: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

Contextual Info: KMM372V804CS DRAM MODULE KMM372V804CS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: KMM372V804BS DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 ELECTRONIC! DRAM MODULE KMM372V804BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t cacp(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

Contextual Info: KMM372V804BS DRAM MODULE KMM372V804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: KMM332V400CS-L KMM332V410CS-L DRAM MODULE KMM332V400CS-L & KMM332V410CS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung

KMM372V400CK

Abstract: KMM372V400CS KMM372V410CK KMM372V410CS
Contextual Info: KMM372V400CK/CS KMM372V410CK/CS DRAM MODULE KMM372V400CK/CS / KMM372V410CK/CS with Fast Page Mode 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V40 1 0C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

Contextual Info: DRAM MODULE KMM372V804BS Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 FLECTRÛM DRAM MODULE KMM372V804BS Revision History Version 0.0 (Sept. 1997) AC CHARACTERISTICS. AC CHARACTERISTICS. • R em o ve d two A C p a ra m eters t c a c p (a c c e s s tim e from C A S ) and tAAP(access tim e from col. addr.) in

Contextual Info: KMM332V400CS-L KMM332V41OCS-L DRAM MODULE KMM332V400CS-L & KMM332V410CS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung

KMM372V404BS

Contextual Info: KMM372V404BS DRAM MODULE KMM372V404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in

Contextual Info: KMM372V404CS DRAM MODULE KMM372V404CS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in

404bs

Abstract: 112tw
Contextual Info: KM M 372 V 40 4B S DRAM MODULE K M M 3 7 2 V 4 0 4 B S Fast Page M o d e 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V404B is a 4Mx72bits Dynamic RAM , Part Identification high density memory module. The Samsung KMM372V404B

Contextual Info: KM M 372 V 400 CK 2/C S 2 KMM372V41 0CK2/CS2 DRAM MODULE 4Mx72 Buffered DIMM 4MX4 Base with ECC Revision 2.0 November 1997 -1 LEC T R Û M - Rev. 2.0 (Nov. 1997) KM M 3 7 2 V 4 0 0 C K 2 / C S 2 KMM372V41 0CK2/CS2 DRAM MODULE Re v is io n H is to ry Version 2.0 (No v em be r 1997)

KMM372V404BS

Contextual Info: KMM372V404BS DRAM MODULE KMM372V404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in

"24 pin" DRAM

Contextual Info: KMM372V400CK/CS KMM372V410CK/CS DRAM MODULE ACSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS

k2624

Contextual Info: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#