KM48V8100 Search Results

Contextual Info: ADVANCED KM48V8100 CMOS DRAM 8 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48V8100 is a high speed CMOS 8, 388,608 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

block DIAGRAM OF random access memory

Abstract: KM48V8100-7 KM48V8100-6
Contextual Info: ADVANCED CMOS DRAM KM48V8100 8M X 8 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tR C KM48V8100-5 50ns 13ns 90ns KM48V8100-6 60ns 15ns 110ns KM48V8100-7 70ns 20ns 130ns • Fast Page M ode operation

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

7414E

Contextual Info: ADVANCED KM48V8100 CM O S DRAM 8M X 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C KM48V8100-5 50ns 13ns 90ns KM48V8100-6 60ns 15ns 110ns KM48V8100-7 70ns 20ns 130ns tR C • Fast Page Mode operation

Contextual Info: KM48V8000C,KM48V8100C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: TARGET CMOS DRAM KM48V8000A, KM48V8100A 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: PRELIMINARY CMOS DRAM KM48V8000, KM48V8100 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 8,388,608 x 8 bit Fast Page Mode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. , access tim e(-5, -6,

31DQ5

Contextual Info: TARGET CMOS DRAM KM48V8000A, KM48V8100A 8 M x 8 B i t CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

KM48V8000A

Contextual Info: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM48V8000A, KM48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 8,388,608 x 8 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5 -6

Contextual Info: PRELIMINARY CMOS DRAM KM48V8000, KM48V8100 8M x 8 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23

KM48V8100CS

Contextual Info: KMM372V80 8 3CK/CS DRAM MODULE KMM372V80(8)3CK/CS Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V80(8)3C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V80(8)3C consists of nine CMOS 8Mx8bits DRAMs

Contextual Info: KMM372V80 8 3BK/BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6

Contextual Info: DRAM MODULE KMM332V803BS-L 8Mx32 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

KM418C256

Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

Contextual Info: KMM332V803AS-L ELECTRONICS DRAM Module KMM332V803AS-L Fast Page Mode 8Mx32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 • Part Identification Dynamic RAM high density m em ory module. The

Contextual Info: DRAM MODULE KMM332V803BS-L 8Mx32 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: KM M 372V80 8 3B K/B S DRAM MODULE KM M 37 2V 80 (8) 3B K/B S F as t Page M o d e 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372V80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The