KM68BV4002J Search Results

KM68BV4002

Abstract: KM68BV4002J-12 KM68BV4002J-15 36-SOJ ttl 74142
Contextual Info: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)

KM68BV4002J-12

Abstract: KM68BV4002 KM68BV4002J-20 km68bv4002j 36SOJ
Contextual Info: Advanced Information BiCMOS SRAM KM68BV4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)

KM68BV4002

Contextual Info: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)

Contextual Info: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 12,13,15ns{Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002 - 1 2 : 170mA(Max.)

KM68BV4002

Abstract: KM68BV4002-15
Contextual Info: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) » Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12 :170 mA(Max.)

TTL-60

Contextual Info: KM68BV4002 BiCMOS SRAM 5 12K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •F a s t Access Time 12,13,15 ns(Max ) The KM68BV4002 is a 4,194,304-bit high-speed*Static • Low Power Dissipation Random Access M em ory organized as 524,288 words

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: KM68BV4002 BiCMOS SRAM 512 K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) The KM68BV4002 is a 4,194,304-bit high-speed Static

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

KM68BV4002J-12

Contextual Info: PRELIMINARY KM68BV4002 BiCMOS SRAM 512Kx 8 Bit High Speed BiCMOS Static RAM 3.3 V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) The KM68BV4002 is a 4,194,304-bit high-speed Static

Contextual Info: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM 68B V4002J-12: 165mA(Max.)

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

Contextual Info: KM68BV4002 BiCMOS SRAM D ocum ent Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision H istory Rev No. Historv Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target

Contextual Info: KM68BV4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) ; 60mA(Max.) (CMOS): 30mA(Max.) Operating KM68BV4002-12:170mA(Max.) KM68BV4002 -13:165 mA(Max.)