KS000010 Search Results

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

gal programming algorithm

Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE

MACH445

Abstract: PAL22V10
Contextual Info: FINAL COM’L: -12/15/20 MACH445-12/15/20 Lattice Semiconductor High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQFP ■ Up to 20 product terms per function, with XOR ■ 5 V, in-circuit programmable

MACH130-20

Abstract: MACH130 MACH230 PAL22V10 PAL26V16
Contextual Info: FINAL COM’L: -15/20 IND: -18/24 MACH130-15/20 Lattice Semiconductor High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS 84 Pins 64 Outputs 64 Macrocells 64 Flip-flops; 4 clock choices 15 ns tPD Commercial 18 ns tPD Industrial 4 “PAL26V16” Blocks

20V8Q

Abstract: SL06 20V8H-15 20V8 GAL20V8 PAL20R8 PALCE20V8 PD3024 pal20v8
Contextual Info: COM'L: H-5/7/10/15/25, Q-10/15/25 IND: H-15/25, Q-20/25 PALCE20V8 Family EE CMOS 24-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS ◆ Pin and function compatible with all PAL 20V8 devices ◆ Electrically erasable CMOS technology provides reconfigurable logic and full testability

PAL26V12

Abstract: MACH120 MACH220 PAL22V10
Contextual Info: FINAL COM’L: -10/12/15/20 IND: -14/18/24 MACH220-10/12/15/20 Lattice Semiconductor High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS 68 Pins 48 Outputs 96 Macrocells 96 Flip-flops; 4 clock choices 10 ns tPD 8 “PAL26V12” blocks with buried macrocells

PM7202

Abstract: bel 188 transistor pnp ST7032 10BASE2 10BASE5 P996 AMD PROMS SA5-27
Contextual Info: Am79C961A PCnet -ISA II Jumperless, Full Duplex Single-Chip Ethernet Controller for ISA DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Industry Standard Architecture ISA and Extended Industry Standard Architecture (EISA) buses

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

TIC126 equivalent

Abstract: BCR40 93C46 AM79C978A PC99 of finite state machine AM79C901A
Contextual Info: Am79C978A PCnet - Home Single-Chip 1/10 Mbps PCI Home Networking Controller DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications

PAL26V16

Abstract: teradyne lasar
Contextual Info: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial

Contextual Info: Am27S41/27PS41 Am27S41/27PS41 16,384-Bit 4,096x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • AC performance is factory tested utilizing programmed test words and columns • Voltage and temperature compensated providing ex­ tremely flat AC performance over military range

27C400

Contextual Info: Am27C400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS Single +5 V power supply • Fast access time ±10% power supply tolerance standard on most speeds — 100 ns ■ Low power consumption

Contextual Info: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for

IC cd4028 PIN DIAGRAM

Contextual Info: Am27S95 32,768 Bit 8 1 9 2 x 4 Bipolar Registered PROM with SSR Diagnostics Capability ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS On-chip diagnostic shift register for serial observability and controllability of the output register User-programmable Enable Pin for Asynchronous or

ampal16r8l

Abstract: 16H8 AMPAL16R4L AMPAL16L8A/BSA AmPAL16L8L
Contextual Info: AmPAL16R8 Fam ily 20-Pin IMOX Programmable Array Logic PAL Elements Distinctive Characteristics • AMD's superior IMOX technology - Guarantees tpo = 15 ns Max. "B " Versions • High-Speed, Half-Power ("A L") and Quarter-Power ("Q ") versions • Platinum-silicide fuses and added test words ensure

xxxxw

Contextual Info: P R E L IM IN A R Y Am27X800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

100140 ecl

Abstract: 2N1710
Contextual Info: ADV MICRO TELECOM 2 flE D DSS7S27 ODSTTÖl 1 7 ^ / ’S - 3 7 - ò £ ~ Preliminary Am7968/Am7969-175 a Advanced Micro Devices TAXIchip Integrated Circuits DISTINCTIVE CHARACTERISTICS • Parallel TTL bus interface 100-140 Mbps (12.5-17.5 Mbytes/sec) data

20510D

Contextual Info: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: AmPALC29M Al 6 24-Pin E2-Based CMOS Programmable Array Logic ADVANCE INFORMATION Distinctive Characteristics • • • • • High-performance semi-custom logic replacement; Electrically Erasable E2 technology allows repro­ grammability 16 bidirectional user-programmable I/O logic macro­

Am27C020

Contextual Info: a Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: Advanced Micro Devices A m 2 7 X 1 0 2 4 1 Megabit 55,536 x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime

eprom 27C512 28pin

Contextual Info: F IN A L A Am27C512 M D i l 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vc c + 1 V ■ Fast access time — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption

028-28-Pin

Contextual Info: AMDH Am27X512 512 Kilobit 64 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime — Lower volume per code