KSC1173 Search Results

KSA473

Contextual Info: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSC1173 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • C om plem ent to KSA473 • C ollector C urrent: lc=3A • C ollecto r D issipation: Pc = 1 0 W T c=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage

Contextual Info: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSC1173 NPN Epitaxial Silicon Transistor Features • • • • Low Frequency Power Amplifier, Power Regulator Collector Current : C I =3A Collector Dissipation : PC=10W TC=25°C Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Contextual Info: KSA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Complement to KSC1173 • Collector Current: lc= -3A • Collector Dissipation: Pc = 10W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating U nit Collector- Base Voltage C haracteristic

KSA473

Abstract: KSC1173
Contextual Info: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

QS 100 NPN Transistor

Abstract: KSC1173 fairchild low power transistor KSA473
Contextual Info: KSC1173 NPN Epitaxial Silicon Transistor Features • • • • Low Frequency Power Amplifier, Power Regulator Collector Current : IC=3A Collector Dissipation : PC=10W TC=25°C Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted

KSC1173

Abstract: 147 B transistor
Contextual Info: KSC1173 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR TO -220 • Com plem ent to KSA473 ’ Collector Current: lc =3A * Collector Dissipation: Pc =10W Tc = 25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage

Contextual Info: KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W TC=25°C • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

c1173Y

Abstract: C1173-Y TO220 Semiconductor Packaging C1173-O
Contextual Info: KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W TC=25°C • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

ksa634

Abstract: ksc1096 transistor KSA634 KSA473 KSA614 KSC1173 KSD288
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSA473 14E 0 | 7^4145 □007460 PNP EPITAXIAL SILICON TRANSISTOR r - 3 3 :/ 7 LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR TO-220 • Complement to KSC1173 • Collector Current: lc= -3 A • Collector Dissipation: PC=10W Tc=25°C

KSA473

Abstract: KSC1173 35mAIB
Contextual Info: KSA473 PNP Epitaxial Silicon Transistor Features • • • • Low Frequency Power Amplifier, Power Regulator Collector Current : IC= -3A Collector Dissipation : PC = 10W TC=25°C Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Contextual Info: KSC1173 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Complement to KSA473 • Collector Current: lc=3A • Collector Dissipation: Pc =10W Tc=25'C ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector-Base Voltage

Contextual Info: KSC1173 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR * C om plem ent to KSA473 * C ollector C urrent: lc=3A * C ollector D issipation: Pc = 10W T c=25°C ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol V C ollector-E m itter Voltage

Contextual Info: KSA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR TO-22Q • Complement to KSC1173 • Collector Current: lc = -3 A • Collector Dissipation: PC=10W Tc=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit

Contextual Info: KSA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Complement to KSC1173 • Collector C urrent: lc= -3A • Collector Dissipation : pc= 10W Tc=25'C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage

Contextual Info: KSA473 PNP Epitaxial Silicon Transistor Features • • • • Low Frequency Power Amplifier, Power Regulator Collector Current : C I = -3A Collector Dissipation : PC = 10W TC=25°C Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted

KSA473

Abstract: KSC1173
Contextual Info: KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W TC=25°C • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

fe120

Abstract: KSC1507 TO-202 transistor NPN KSA473 KSA636 KSC1098 KSC1173 samsung tv
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC1098 1ME D | 7^1.4142 Q007S33 4 NPN EPITAXIAL SILICON TRANSISTOR -3 Ò -o n LOW FREQUENCY AMPLIFIER • • • • Complement to KSA636 Collector-Base Voltage Vc»o=7W Collector Current lc =2 A Collector Dissipation Pc=10W{Tc=25°C

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

TIP3041

Abstract: KSH47 KSC3233 KSH29 KSH29C KSH30 KSH30C KSH31 KSH340 KSH350
Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7*11,4142 G011S32 TT3 HSriGK TRANSISTORS 2.1.2 FUNCTION GUIDE D-PACK Type Transistors Device Type Condition Condition IlFE lc A (A) Vce<*atXV) Condition TYP MAX Vce (V) lc (A) 10 0.2 (A) (V) NPN PNP (V) lc (A) MIN MAX 0.5

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™