KU 607 Search Results

Contextual Info: TFF11096HN Low phase noise LO generator for VSAT applications Rev. 3 — 28 March 2013 Product data sheet 1. General description The TFF11096HN is a Ku band frequency generator intended for low phase noise Local Oscillator LO circuits for Ku band VSAT transmitters and transceivers. The specified

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

draka fileca

Abstract: KU 03 draka fileca cable ETFE
Contextual Info: Fiches série 5 14/12/00 17:09 Page 5 Wires and cables for missiles & electronic equipments 5 Single & multicore ETFE insulated wires NFC 93.524/KU series Stranded conductor : Tinned copper ETFE Insulation APPLICATIONS ● Wiring applications for Military electronic equipments

Contextual Info: OQUHGV Ogvcn"Qzkfg"Ugokeqpfwevqt"Hkgnf"Ghhgev"Vtcpukuvqt QrvkOQUVO QrvkOQUVO"Rqygt/OQUHGV."62X DU¥245P26NU Fcvc"Ujggv Tgx0"402 Hkpcn Rqygt"Ocpcigogpv" "Ownvkoctmgv QrvkOQUVO"Rqygt/OQUHGV 62X DU¥245P26NU 3"""""Fguetkrvkqp VUFUQP/:"HN

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

ku 206

Abstract: draka fileca cable MARKING KU 1 928 498 161 multicore NFC 93 ku06 0 281 010 255
Contextual Info: Fiches série 5 14/12/00 17:09 Page 7 Wires and cables for missiles & electronic equipments 5 Single & multicore ETFE shielded and jacketed wires NFC 93.524/KU series Stranded conductor : Tinned copper ETFE Insulation Braid, tinned copper APPLICATIONS ● Wiring applications for Military electronic equipments

GN-R40RSPN-J

Abstract: GN-R40RSPN GN-M2RS GN-T10RSPN GN-R40RS-J GN-T10RSPN-J GN-R40RS GNP1 4r2s takenaka
Contextual Info: PHOTOSENSOR G N SERIES TAKENAKA ELEC TR O N IC I N D U S T R I A L C O . , L T D. with built-in amplifier_ I N S T R U C T I O N M A N U A L Head office, factory T elephone FAX : 20-1 Narano-cho, Shinomiya, Yamashina-ku, : Kyoto 607-8032, Japan

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

NE67383

Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383
Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology

Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­

FLK107XV

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

FET 913

Abstract: FLK107XV
Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

FLK107XV

Abstract: tc 5082
Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLK107XV chip is a pow er G aAs FET that is designed for general purpose applications in the Ku-Band

NE67383

Contextual Info: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz

Andrew ANTENNA 6,4

Contextual Info: 1.2-/1.5-/1.8-/2.4-Meter NewsFlash Ku- or K-Band Transportable SNG Antennas Antenna Features • • A M otorized Drive System fo r a Reliable, Precise, and Smooth Running System Stow Height is 24 in 2.4-m eter o r 19 in (1.2-meter) fo r More Overall Clearance fo r the Vehicle

NE67383

Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: NE67300 NE67383 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz 3.3 dB at 26 GHz

Contextual Info: HEAD OFFICE TEL. 03-3833-5441 FAX. 03-3835-4754 16-20, UENO 6-CHOME, TAITO-KU, TOKYO, JAPAN, ZIP CODE 110-0005 TEL. 1 760-510-3200 FAX.(1 )760-471 -4046 1770 LA COSTA MEADOWS DRIVE SAN MARCOS, CALIFORNIA 92069 U.S.A. CHICAGO OFFICE TEL.(1 )847-925-0888 FAX.(1)847-925-0899

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

yx 861

Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE

smd JSs

Abstract: smd JSs diode
Contextual Info: SK50GB065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GB065 *'-) RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ RU V B- I WS L$ UW V C$XYI J : C$0%&

Contextual Info: SK50GARL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GARL065 *'-) RSS N KU V B- I WS L$ US V TJS V Z JS N BP I TJK L$ TS _- B- I JK L$ JK V B- I WS L$ Ta V C$XYI J : C$0%&

DIODE B82

Contextual Info: SK50GAL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ Ka V B- I WS L$ [W V TSS V BP I TKS L$ UUS V B- I JK L$