KU BAND POWER GAAS FET Search Results

NEZ1011-8E

Contextual Info: DATA PRODUCT SHEET PRELIMINARY INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-8E is power GaAs FET which provides high 0.5±0.05 1.5 CHAMFER 4 PLACES gain, high efficiency and high output power in Ku-band.

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran­

MGF2430A

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz

MGF2415

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz

30349

Abstract: 136423
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R275, NE960R575 0.2/0.5 W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NE960R275 and NE960R575 are 0.2/0.5 W GaAs MESFETs designed for middle power transmitter applications for X, Ku-band microwave communication systems. It is capable of delivering 0.2/0.5 watt of output

MGF2415A

Abstract: MGF2430A
Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz

gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Contextual Info: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers

Nec K 872

Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

NEC1011-5E

Abstract: NEZ1011-5E NEZ1414-5E T-78
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

NEZ1011-3E

Abstract: NEZ1414-3E T-78 1981 3E
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

nec 258

Abstract: NEZ1011-8E NEZ1414-8E
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

92963

Abstract: 40198 NEZ1011-4E NEZ1414-4E T-78
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

NEC 2933

Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
Contextual Info: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

35W amplifiers

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic