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    MGFK30V4045 Search Results

    MGFK30V4045 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFK30V4045 Mitsubishi 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET Original PDF
    MGFK30V4045 Mitsubishi 14.0-14.5 GHz BAND 1W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFK30V4045 Mitsubishi 14.0 - 14.5 GHz Band 1 W Internally Matched GaAs FET Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK30V4045 14.0 ~ 14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFK30V4045

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK30V4045 MGFK30V4045 350mA

    Untitled

    Abstract: No abstract text available
    Text: MGFK30V4045 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-15 I(D) Max. (A)1.0 P(D) Max. (W)11 Maximum Operating Temp (øC)175 I(DSS) Min. (A)800m I(DSS) Max. (A)1.0 @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF MGFK30V4045

    MGFK30V4045

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK30V4045 MGFK30V4045 350mA 350mA,

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK30V4045 MGFK30V4045 350mA

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGFK30V4045

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFK30V4045 MGFK30V4045 350mA, 350mA 30GHz 31GHz

    4045 FET

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND IW INTERNALLY MATCHED GaAs FET DESCRIPTION O U T L IN E D R A W IN G U n it: m illim e te rs linches The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 ~ 14.5


    OCR Scan     		PDF MGFK30V4045 FK30V4045 4045 FET

    MGF1200

    Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.


    OCR Scan     		PDF MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A

    3642G

    Abstract: No abstract text available
    Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m


    OCR Scan     		PDF

    MGFK37V4045

    Abstract: No abstract text available
    Text: Ku BAND INTERNALLY MATCHED GaAs FET MGFKxxVxxxx Series Typical Characteristics P ld i dBm G lp (dB) f (GHz) MGFK35V2228 3 5 .5 7 .0 1 2 .2 - 1 2 .8 •'nBQ« 3 5 .5 7 .0 1 2 .7 - 1 3 .2 3 8 .0 6 .0 3 8 .0 Type 3*» M Q fK a n r^ S MGFK38V2732 MGFK25V4045 *


    OCR Scan     		PDF GF-14 GF-27 MGFK35V2228 MGFK38V2732 MGFK25V4045 MGFK30V4045 MGFK33V4G45 MGFK35V4045 MGFK37V4045