L-BAND 60 WATT TRANSISTOR Search Results

BFY81

Contextual Info: 3s BFY81 DUAL, HIGH-GAIN, LOW-NOISE, LOW-CURRENT TYPE NPN DIFFUSED SILICON PLANAR TRANSISTORS PHYSKAl MUCNSKWS G E N ER A L D ESCRIPTIO N - The B F Y 8 1 i s a six terminal device containing two iso la ted high gain NPN double d iffu sed silic o n PLA N A R tran sistors.

bfy81

Contextual Info: 3iT i^r?sr BF Y 81 DUAL, HIGH-GAIN, LOW-NOISE, LOW-CURRENT TYPE NPN DIFFUSED SILICON PLANAR TRANSISTORS phtocu huenskws G E N ER A L D E S C R IP T IO N -T h e B F Y 8 1 i s a six terminal d ev ice co n tain in g two iso la te d high gain NPN double d iffu sed silico n P LA N A R tran sisto rs.

2N410

Abstract: 2N487 2n404 2N4880
Contextual Info: I» D DUAL MONOLITHIC MATCHED NPN SILICON PLANAR TRANSISTORS O 65 RUSHMORE STREET, WESTBURX NEW YORK 11590 516 997-7474 TWX 510*222*0974 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 G E N E R A L D E S C R IP T IO N D IELEC T R IC A LLY Package Options ISOLATED

FERRITE TOROID

Abstract: F624-19 100MIL ferrite L8 FERRITE TOROID Indiana General F684-1 Johanson Dielectrics UDR-450 C144* transistor Johanson Piston Trimmer c16pc
Contextual Info: UDR-450 450 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-450 is an internally matched, COMMON EMITTER transistor capable of providing 450 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450

100MIL

Abstract: FERRITE TOROID Johanson Piston Trimmer indiana general UDR-500 udr 70 F624-19 l44 transistor
Contextual Info: UDR-500 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450

MRF327

Abstract: 80WF
Contextual Info: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base

MRF327

Contextual Info: <^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

MRF327

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

MRF327

Abstract: Johanson Piston Trimmer
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

TCF10B

Abstract: pilot relay TC-10B master trip relay power line carrier communication abb TC-10
Contextual Info: T y p e s 1 AStA BROWN BOVfcft! T C - 1 0 B a n c l T C F - T 0 B " Frequency programmable power line carrier 1MDB11007-EN Page 1 March 1992 Changed since August 1990 Data subject to change without notice ABB Network Control & Protection SE 90629 Features

ACRIAN

Abstract: acrian inc
Contextual Info: 0182998 ACRIAN INC T7 ACRIAN INC rJm UStk Krai JS l M l ¡2 S I H m P ! S r . n i L h Wj¡¡¡ h >« Ü m&Z I 12 WATT - 28 VOLT 100-500 MHz The 0105-12 is a 12 watt balanced transistor designed for broadband use in the 100-500 M Hz frequency band. It may be operated in Class A, AB or C. Gold

2SC2131

Contextual Info: ^s.mi-Conau.cto'L ^Pioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OUTLINE DRAWING Dimensions ,n mm «!9-39 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2131 is a silicon NPN epitaxial planar type transistor designed

UTV020

Contextual Info: Products., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UTV020 2 Watts, 25 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55FT, STYLE 2 The UTV 020 is a COMMON EMITTER transistor capable of providing 2

transistor B 764

Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
Contextual Info: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

TRANSISTOR BC 545

Abstract: NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 2N5641 bi 370 transistor e transistor fn 155 2n5642 bi 370 transistor NPN/TRANSISTOR BC 545 2N5643
Contextual Info: MM m tm F?F- Products m M ic m s e m i 140 Commerce Drive Montgomery ville, PÂ 18936' Tel: ,215 631-9840 2N5641 2N5642/2N5643 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS 175MHz • FREQUENCY ■ VOLTAGE 28V TO 40 W • HIGH POWER OUT . HIGH POWER GA!N

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Johanson Piston Trimmer

Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Contextual Info: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

2SC730

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band portable or hand-held radio applications. Dimensions in mm

2SC1947 equivalent

Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

2SC730

Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2S C 2131 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES •