2N487 Search Results

UJT 2N4871

Abstract: transistor 2n4871 UJT 2N4870 2N4870 2N4871 ZN4871 2N4810 100S 2N487 ABB thyristor 5
Contextual Info: 2IM4870 2N4871 PIM U n iju n ctio n T ra n s is to rs S ilico n U n iju n ctio n T ra n sis to rs . . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger circuits. These devices feature: . • • • • • Low Peak Point Current — 1 nA Typical

transistor 2n4871

Abstract: 2N4871 2N4870 GET4871 SCR firing unijunction transistor 2n4870 2n4871 transistor unijunction bi14 GET4870
Contextual Info: G E SOLID STATE 3875081 □Ï G E SOLID ]>E~ 3fl75Dfll □□IfiQOM (a STATE U n i j u n c t i o n T r a n s is t o r s a n r l S w it c h e s 01E 18004 D - T 31-21 2N4870,2N4871, GET4870, GET4871 Silicon Unijunction Transistors TO-92 TO-18 The GE/RC A 2 N 4 8 7 0,2N 4 8 71 , and GET4870, GET4871 are

motorola eb20

Abstract: 2N4871
Contextual Info: MOTOROLA SC D IO D ES/O PTO 3TE D H b3ti7SSS DDf iEbSS 7 • NOT RECOMMENDED FOR NEW DESIGNS P N Unijunction Transistors f10T7 T-37-JII 2N4870 2N 4871 S ilic o n U nijunction T ran sisto rs . designed for pulse and timing circuits, sensing circuits, and thyristor trigger

2N3409

Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
Contextual Info: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB

Contextual Info: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

2N4871

Abstract: 2N4870
Contextual Info: 2N4870 2N4871 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4870 and 2N4871 are silicon PN unijunction transistors designed for oscillator, triggering and timing applications. MARKING: FULL PART NUMBER

BR101

Abstract: bry39 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PNPN DEVICES OVERVIEW leaded surface-m ount TO -72 TO-92 SOT23 SOT143 BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 BRY62

2N4045

Abstract: 2N2914 2N4880
Contextual Info: small signal transistors 74 , I SILICON NPN MONOLITHIC DUALS I TYPE PACKAGE 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-71 TO-71 TO-71

2N410

Abstract: 2N487 2n404 2N4880
Contextual Info: I» D DUAL MONOLITHIC MATCHED NPN SILICON PLANAR TRANSISTORS O 65 RUSHMORE STREET, WESTBURX NEW YORK 11590 516 997-7474 TWX 510*222*0974 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 G E N E R A L D E S C R IP T IO N D IELEC T R IC A LLY Package Options ISOLATED

2N2646

Abstract: 2N4870 2N4871 AD 277 2N2647 KT132A KT133A KT132B
Contextual Info: OflHonepexoAHbie ôwnoëÿpHbie TpaH3MCTopû OôoçHaneHèe A ía n o r Pmax 0,3 ÜMeœ.ôaç. max À 35 la èMn. (A ) 2,0 0,3 35 1,5 (B t ) KT132A KT132B KT133A KT133B rn 2N2646 2N2647 2N4870 2N4871 " 3 a â o fl T P A H 3 È C T O P " PecnyôëM Ka B en ap yc b , 2 2 0 0 6 4 ,

2N3293

Abstract: 2N3294 2n4957 40244 2N5851 2n3287 2N335 2n3600 2N5852 2N2857
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

2n4877

Contextual Info: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

transistor 2n4871

Abstract: GET4871 2N4871 RCA 2N 2n4871 transistor 4871 RCA SCR 2n RCA Solid State Power Transistor
Contextual Info: G E SOLID STATE 3875081 01 G E SOLID STATE U n iju n c tio n T r a n s is to r s a n ri S w itc h e s DET|3a7SDñl OOlñüOH ti 01E - 18004 D T -31-2I 2N4870, 2N4871, GET4870, GET4871 Silicon Unijunction Transistors

Contextual Info: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com Mouser Electronics Related Product Links 610-2N4870 - Central Semiconductor 2N4870

2N4877

Contextual Info: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

2N404S

Abstract: 2N4045
Contextual Info: , fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4O44, 2N4045, 2H41OO, 2N4878, 2N4879, 2N4880 Dual Monolithic Matched NPN Silicon Planar Transistors hp > 200 @ 10 /nA FEATURES • High Gain At Low Current

2N4880

Abstract: 2N4044 2N4045 2N4100 2N4878 DIELECTRICALLY ISOLATED 2N4879 X2N4044 X2N4045 X2N4100
Contextual Info: CALOGIC CORP MAE D 1Û44322 000Ü30D 2 mCGC hi calortc CORPORATION V Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier T -n t l g ro E 2N4044/2N4045/2N4100/2N4878/2N4879/2N4880 i ro FEATURES • • • • • ABSOLUTE MAXIMUM RATINGS

Contextual Info: 40 81 34 693 SEMICOA DE | 0134^3 00 D01 3S M HIGH SPEE D LOGIC SW ITCHES C e n t’d Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW Electrical Characteristics @ 25°C

UJT 2N4871

Contextual Info: DIGITRON SEMICONDUCTORS 2N4870-2N4871 PN UNIJUNCTION TRANSISTORS MAXIMUM RATINGS Rating RMS power dissipation 1 RMS emitter current Peak pulse emitter current (2) Symbol Value Unit PD 300 mW Ie 50 mA ie 1.5 Amp Emitter reverse voltage VB2E 30 Volts Interbase voltage †

2N3294

Abstract: 2N335 40240 2N337 2n3600 2N2857 2N3292 2N3293 2N3478 2N3839
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

2N4045

Abstract: 2N4878 2N4880 2N4044 7474 ic 2N4100 2N4879 Dual Transistors TO-78
Contextual Info: D U A L M O N O L IT H IC M A T C H E D NPN SILICO N P L A N A R T R A N S IS T O R S ¡M US QMS, 65 RUSHMORE STREET, WESTBUR^ NEW YORK 11590 516 997-7474 TWX 510*222*0974 2N 4044 2N4045 2N4100 2N 4S78 2N4879 2N4880 GENERAL DESCRIPTION D IE LE C TR IC A LLY

2N4870

Abstract: LM390
Contextual Info: 2N4870 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N4870 Availability Online Store

JANS2N5154

Abstract: 23302 JANS2N5154L
Contextual Info: Micmsemi NPN Transistors Part Number I I I 2N5682 2N5321 2N5320 2N5786 2N5785 2N5784 2N4877 2N5152 2N5152L 2N5154 2N5154L JAN2N5152 JAN2N5152L JAN2N5154 JAN2N5154L JANS2N5152 JANS2N5152L JANS2N5154 JANS2N5154L JANTX2N5152 JANTX2N5152L JANTX2N5154 JANTX2N5154L

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY