2N410 Search Results

Contextual Info: 2N4104 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

CQ417

Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686
Contextual Info: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A

Contextual Info: DIGITRON SEMICONDUCTORS 2N3668-2N3670, 2N4103 12.5A SILICON CONTROLLED RECTIFIER MAXIMUM RATINGS Rating Symbol 2N3668 2N3669 2N3670 2N4103 Units Non-repetitive peak reverse voltage VRM 150 330 660 700 V Peak repetitive reverse voltage VRRM 100 200 400 600

2N4104

Abstract: 4317 transistor transistor 4317
Contextual Info: TYPE 2N4104 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 6 8 3 1 5 , J A N U A R Y 1 96 6 DESIGNED FOR USE IN LOW-LEVEL, LOW-NOISE AMPLIFIERS • Guaranteed Low-Noise Characteristics at 10 Hz, 100 Hx, 1 kHz and 10 kHz • Very High Guaranteed hFE at

2N3670

Abstract: scr 2n3668 scr silicon controlled rectifiers 2N3668-2N3670 scr 2N3669 2N3669 2N4103 2N3688 scr RCA 2N3670 ta2621
Contextual Info: fi E SOLI» STATE "Üb 3 8 7 5 0 8 1 G E S O L ID S T A T E Silicon Controlled Rectifiers- dF 01E | 3 fl7 5 []fll D 01 7 k f l 4 17684 2N3668-2N3670, 2N4103 File Num ber 12.5-A Silicon Controlled Rectifiers 116 TERMINAL DESIGNATIONS For Low-Cost Power-Control and Power-Switching

AC187

Abstract: 2N4105 ac187-01 TO13 2N1218 2S0352
Contextual Info: POWER GERMANIUM NPN Item Number Part Number Manufacturer Ic Max V BR CEO (A) (V) hFE Min Max fT ICBO Max (Hz) (A) t, Max (I) t, Max PD Max (8) (W) Toper Max (OC) Package Style Devices 1 Watt or More 5 2S0367 2S0170 2N144 2S0352 2S0352 2N4105 AC187 AC187/01

2N4045

Abstract: 2N2914 2N4880
Contextual Info: small signal transistors 74 , I SILICON NPN MONOLITHIC DUALS I TYPE PACKAGE 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-71 TO-71 TO-71

2N410

Abstract: 2N487 2n404 2N4880
Contextual Info: I» D DUAL MONOLITHIC MATCHED NPN SILICON PLANAR TRANSISTORS O 65 RUSHMORE STREET, WESTBURX NEW YORK 11590 516 997-7474 TWX 510*222*0974 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 G E N E R A L D E S C R IP T IO N D IELEC T R IC A LLY Package Options ISOLATED

2N3525

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon Controlled Rflctlften 2N3228, 2N3525, 2N4101 TERMINAL DESIGNATIONS 5-A Silicon Controlled Rectifiers For Low-Cost Power-Control and Power-Switching Applications

2n2345

Abstract: 2N2344 2N3555 2n6336 2N2346 2N3560 2N2009 2N2012 2N2325 2N2348
Contextual Info: A SILICON CONTROLLED RECTIFIERS U O' 180mA TO-18 ro I o a 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 500mA 350mA TO-18 TO-5 TO-18 2N948 30 2N2683 •2N2687 2N5719 2N4109 TO-5 2N2009 2N5720 2N949 2N950 2N5721 2N951 2N2684 2N2688

scr 2n3668

Abstract: scr 2N3669 2N3688 scr RCA 2N3670 2N4103 2N3669 RCA 2N3669 2N3668 2N3668-2N3670 2N3670
Contextual Info: 2N3668-2N3670, 2N4103 File Num ber 116 TERMINAL DESIGNATIONS 12.5-A Silicon Controlled Rectifiers For Low-Cost Power-Control and Power-Switching Applications Features: • ■ ■ ■ ■ Low switching losses High dl/dt and dv/dt capabilities Low leakage currents, both forward and reverse

s3901s

Abstract: RCA THYRISTOR S5800M rca thyristor stud 2N3669 S2620D scr 2n3668 2N4101 S3703SF Thyristor RCA
Contextual Info: Silicon Controlled Rectifiers SCR's Type Selection Charts (cont'd) Current Voltage Temp. D R O M V RCA •T Types (RMS) A •TSM 50/60 Hz A 1 Famil STANDARD TYPES S2610B S2610D 3.3 S2610M 85/100 STANDARD TYPES S2620B S2620D S2620M 7 2N3228 2N3525 2N4101

Contextual Info: NPN GENERAL PURPOSE TRANSISTOR 2N4104 • Hermetic TO-18 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage

2n4878

Abstract: 2N404S 2N4880
Contextual Info: CA L O GI C CÖRP 46E D calodic ^ • 1644322 0000300 2 ■ C 6 C Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier CO RPORA TION \J T - n - n 2N4044/2N4045/2N4100/2N4878/2N4879/2N4880 FEATURES • • • • • High Gain at Low Current

2N4880

Abstract: 2N4044 2N4045 2N4100 2N4878 DIELECTRICALLY ISOLATED 2N4879 X2N4044 X2N4045 X2N4100
Contextual Info: CALOGIC CORP MAE D 1Û44322 000Ü30D 2 mCGC hi calortc CORPORATION V Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier T -n t l g ro E 2N4044/2N4045/2N4100/2N4878/2N4879/2N4880 i ro FEATURES • • • • • ABSOLUTE MAXIMUM RATINGS

2N4104

Contextual Info: 2N4104 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

2N4045

Abstract: 2N4878 2N4880 2N4044 7474 ic 2N4100 2N4879 Dual Transistors TO-78
Contextual Info: D U A L M O N O L IT H IC M A T C H E D NPN SILICO N P L A N A R T R A N S IS T O R S ¡M US QMS, 65 RUSHMORE STREET, WESTBUR^ NEW YORK 11590 516 997-7474 TWX 510*222*0974 2N 4044 2N4045 2N4100 2N 4S78 2N4879 2N4880 GENERAL DESCRIPTION D IE LE C TR IC A LLY

Contextual Info: 2N4104 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

scr 2N3525

Abstract: RCA 2N3525 2N3525 2N4101 2N3228 TA1225 TA2773 TAT222
Contextual Info: G E SOLI » STAT E 3 875081 G E SOL ID S T A T E _ • File Num ber 114 01E 17669 D Silicon Controlled Rectifier* 2N3228, 2N3525, 2N4101 5-A Silicon Controlled Rectifiers TERM,K For Low -C ost Pow er-C ontrol and Pow er-Sw itching Applications

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N692

Contextual Info: SCRS Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (a & ä (K - » uuU CASE TO-48 TO-220 TO-3 90 f 250 £ n u U ¡J TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B*

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Q600

Abstract: 2N4101 2N4102 S2060 S2061 S2062 S2400 S2600 S2610 S2620
Contextual Info: Application Information continued SCR's Current *T (R M S ) a Voltage Range - V Package Series T O -2 2 0 A 8 (V E R S A W A T T ) S2060 S2061 S2062 Typical Applications LOW -CURRENT S E N S IT IV E -G A T E 4 15-600 Logic Interface to Power C o n tro l

2N4045

Abstract: 2N4044 2N4100 2N4880 2N4878 HPE-200 2N4879
Contextual Info: 2N 4044, 2N 4045, 2N 4100, 2N 4878, 2N 4879, 2N 4880 Dual M o nolithic M atched NPN S ilicon P lan ar T ran s is to rs FEATURES • High Gain At Low Current hpg > 200 @ 10 ^ A • Low Output Capacitance Co b o < 0 .8 p F • h p E Match • Tight V BE Tracking