L43 TRANSISTOR Search Results

L43 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

L43 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUK104-50L Abstract: BUK104-50S BUK104-50US Contextual Info: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving	OCR Scan	711002b D0b3fl43 BUK104-50L/S BUK104-50LP/SP pK104-50L/S Ips/lps25 BUK104-60L/S BUK104-50L BUK104-50S BUK104-50US	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
l43 transistor Abstract: transistor l43 Contextual Info: 2.54mm .100" Pitch Transistor Sockets FEATURES AND SPECIFICATIONS Reference Information Packaging: Bulk Use With: 2759 and 6459 terminals Designed In: Inches Electrical Voltage: 250V Current: 4.0A Contact Resistance: 20mΩ max. Dielectric Withstanding Voltage: 1500V AC	Original		PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
d 772 transistor Abstract: 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain Contextual Info: N AMER PHILIPS/DISCRETE b TE D • bbS3T31 0020140 7D7 I IAPX 2N3904 I SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic T O -92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement Is 2N 3906.	OCR Scan	bbS3T31 2N3904 2N3906. 7Z749B8_ d 772 transistor 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain	PDF
power BJT DARLINGTON PAIR NPN Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference Contextual Info: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1 SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V	Original	BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference	PDF
BD264A Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT	OCR Scan		PDF
Y220b Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417 Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12	OCR Scan	BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N3836 BD264 BD263 BD264A NS9726 UD3008 2N3837 2N5417	PDF
l35 CAPacitor Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices Contextual Info: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features	Original	PTFA261702E PTFA261702E 170-watt l35 CAPacitor 1800 ldmos marking l33 BCP56 LM7805 RO4350 L42 marking transistor ATC Semiconductor Devices	PDF
marking l33 Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor Contextual Info: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features	Original	PTFA261702E PTFA261702E 170-watt marking l33 transistor L44 L33 TRANSISTOR BCP56 LM7805 RO4350 L42 marking transistor	PDF
2SC736 Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C	OCR Scan	NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC736 BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726	PDF
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan		PDF
028A5 Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C	OCR Scan		PDF
80 amp 30v npn darlington Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 80 amp 30v npn darlington UD3008 transistor 2sc115 bd107a A515 B3570 B3571 BD106 HFE-10	PDF

PNP transistor A705 Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311 Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L PNP transistor A705 2N1620 2sc768 2N1619 UD3008 BD264 MHT6414 SOT1156 MHT6311	PDF
speaker protection circuit diagram Abstract: BD5446EFV L43 3pin GRM188B11H471 GRM188B31A pwm 8pin C25D C50A C50B C53D Contextual Info: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.10075EBT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD	Original	BD5446EFV 10075EBT14 BD5446EFV R1010A speaker protection circuit diagram L43 3pin GRM188B11H471 GRM188B31A pwm 8pin C25D C50A C50B C53D	PDF
audio amplifier 2W IC 12PIN Abstract: Speaker 40W C25D C50A C50B BD5446EFV GRM188B11h c31c R50b sagami Contextual Info: High Performance Class-D Speaker / Headphone Amplifier Series 20W+20W Class-D Speaker Amplifier for Digital Input BD5446EFV No.10075EAT14 ●Overview BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power	Original	BD5446EFV 10075EAT14 BD5446EFV R1010A audio amplifier 2W IC 12PIN Speaker 40W C25D C50A C50B GRM188B11h c31c R50b sagami	PDF
L43 3pin Abstract: BD5446 C31B Contextual Info: BD5446EFV Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.11075ECT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD	Original	BD5446EFV 11075ECT14 BD5446EFV R1120A L43 3pin BD5446 C31B	PDF
making L43 Abstract: 3072 rohm Contextual Info: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.11075ECT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD	Original	BD5446EFV 11075ECT14 BD5446EFV R1120A making L43 3072 rohm	PDF
R50B Contextual Info: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.11075ECT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD	Original	BD5446EFV 11075ECT14 BD5446EFV R1120A R50B	PDF
S T R 54041 EQUIVALENT Abstract: 33u 35v electrolytic capacitor Contextual Info: LM2596 Simple switcher Power Converter 150kHz 3A Step-Down Voltage Regulator GENERAL DESCRIPTION FEATURES The LM2596 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 3A load with	Original	LM2596 150kHz needed63-5L S T R 54041 EQUIVALENT 33u 35v electrolytic capacitor	PDF
transistor a708 Contextual Info: Electronic Flow Meter FM1 Description Micro controller operated Flow Meter to monitor and display flow rates and temperature. Once correctly adjusted it can also be used for mass flow measurements. Factory pre-set for air and water. rail-mounted version 1	Original		PDF
Contextual Info: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.11075ECT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD	Original	BD5446EFV 11075ECT14 BD5446EFV	PDF
bm5446 Contextual Info: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input with Built-in DSP BM5446EFV No.10075EBT13 ●Description BM5446EFV is a Class D Speaker Amplifier with built-in DSP Digital Sound Processor designed for Flat-panel TVs in	Original	BM5446EFV 10075EBT13 BM5446EFV R1010A bm5446	PDF

L43 TRANSISTOR Search Results

L43 TRANSISTOR Result Highlights (5)

L43 TRANSISTOR Datasheets Context Search

BUK104-50L

2N2222A 338

l43 transistor

y51 h 120c

d 772 transistor

power BJT DARLINGTON PAIR NPN

BD264A

Y220b

l35 CAPacitor

marking l33

2SC736

028A5

80 amp 30v npn darlington

PNP transistor A705

speaker protection circuit diagram

audio amplifier 2W IC 12PIN

L43 3pin

making L43

R50B

S T R 54041 EQUIVALENT

transistor a708

bm5446