C50A Search Results

cell phone

Abstract: C50A C50M working OF IC 723 single LOAD CELL C50B C50D C50G C50J C50K
Contextual Info: C50A – C50M W TE PO WE R SEM IC O ND UC TO R S 50A AUTOMOTIVE RECTIFIER CELL Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX B D E C Mechanical Data ! ! ! ! A Case: Protected with Silicon Rubber

C50A50Z4

Contextual Info: Model C50A50Z4 Surface Mount Termination 50 Watts, 50Ω Description The C50A50Z4 is high performance Alumina Al203 surface mount termination intended as a low cost alternative to Aluminum Oxide (AlN). The termination is well suited to all cellular frequency bands such as;

C50A50Z4

Contextual Info: ROHS Compliant Model C50A50Z4 Surface Mount Termination 50 Watts, 50Ω Description The C50A50Z4 is high performance Alumina Al203 surface mount termination intended as a low cost alternative to Aluminum Oxide (AlN). The termination is well suited to all cellular frequency bands such as;

c20am

Abstract: AC20A
Contextual Info: M O T O R O L A SC { D I O D E S / O P T 0} Dl DE | b 3 b 7 S 5 S GD7TD71 M A C20A M A C25A M A C50A T riacs Silico n Bidirectional Triode Thyristors . . . d e s ig n e d p rim a rily fo r industrial a n d c o n s u m e r ap plicatio ns fo r full-w ave c o n ­

Contextual Info: C50A – C50K 50A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data      B Case: Cell Diode Passivated with Silicon Rubber

C50A

Contextual Info: Double Balanced Mixers C50A 5 to 9 GHz Specifications RF Frequency LO Frequency LO Power 5 to 9 GHz 5 to 9GHz 13 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles

Contextual Info: Model C50A50Z4 ROHS Compliant Surface Mount Termination 50 Watts, 50Ω Description The C50A50Z4 is high performance Alumina Al203 surface mount termination intended as a low cost alternative to Aluminum Oxide (AlN). The termination is well suited to all cellular frequency bands such as;

c50a

Contextual Info: Double Balanced Mixers C50A 5 to 9GHz Specifications RF Frequency LO Frequency LO Power 5 to 9GHz 5 to 9GHz 13 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles

c50a

Abstract: C50B C50D C50G C50J C50K
Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

7 bit shift register

Abstract: KS-8205 Samsung UART KS
Contextual Info: KS82C450/C50A ASYNCHRONOUS COMMUNICATIONS ELEMENT DESCRIPTION FEATURES • Single Chip UART/BRG • DC to 10 • Crystal or External Clock Input • On Chip Baud Rate Generator 1 to 65535 Divisor Generates 16x Clock • Prioritized Interrupt Mode • Fully TTL/CMOS Compatible

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

C5024

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package C50 Package Weight mg 620 Product Group Type No. C5020, C5024, C5036 C50A – C50K C7020, C7024, C7036 Component Die Material Solder Alloy Slug Copper Alloy Plating Silver

320C50A

Abstract: C50A SMJ320C50AGFAM40 SMJ320C50AGFAM50 SMJ320C50AHFGM40 SMJ320C50AHFGM50 RW109 C50A-50
Contextual Info: C50A DIGITAL SIGNAL PROCESSOR SGUS018 – JANUARY 1994 • • • • • • • • • • • • • • • • • 100 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 1 99 ÉÉÉ ÉÉÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉ 33 66 • ÉÉ ÉÉ ÉÉÉ ÉÉÉ HFG PACKAGE

TMP8049AP

Abstract: P80C39 intel 8049 tmp82c43 P80C49 128X8 RD833 MCU48-67 TMP82C43P 2kx8 rom
Contextual Info: TOSHIBA TMP80C49A/39A CMOS 8-BIT SINGLE-CHIP MICROCOMPUTER TLCS-48C TMP80C49AP/TMP80C49AP- 6 TMP80C39AP/TMP80C39AP- 6 TMP80C49AU/TMP80C49AU-6 1. GENERAL DESCRIPTION AND FEATURES The TMP80C49A is a single chip microcomputer fabricated in Silicon Gate CMOS

SMD DIODE UF4007

Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
Contextual Info: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and

z84c50

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION < £ S L O E Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ ■ Low power consumption TBD Typ (5V.10 MHz under RUN mode)

X3C26P1-30S

Abstract: RFP- C16A50Z4 v-tek 2500 C50A50Z4 RF Directional Couplers data sheet RF35 RO4003 RO4350 X3C26P1-30
Contextual Info: Model X3C26P1-30S Rev A 30 dB Directional Coupler Description The X3C26P1-30S is a low profile, high performance 30dB directional coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for WIMAX and LTE band applications. The

RF35

Abstract: RO4003 RO4350 PCB Rogers RO4003 C50A50Z4
Contextual Info: Model X3C19E2-20 REV C 20 dB Directional Coupler Description The X3C19E2-20S is a low profile, high performance 20dB directional coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for DCS, PCS, WCDMA and LTE band applications. The X3C19E2-20S is designed particularly

hybrid coupler 3dB 180

Abstract: X3C09P1-03S hybrid coupler hybrid coupler 3dB 90 3DB coupler 180 3dB coupler 180 degree 3dB coupler 210F RF35 RO4003
Contextual Info: ` Model X3C09P1-03S Rev B Hybrid Coupler 3 dB, 90° Description The X3C09P1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for AMPS, GSM, WCDMA and LTE band applications. The

hybrid coupler 3dB 180

Abstract: X3C21P1-03S 180 degree 3dB coupler hybrid 180 couplers hybrid coupler X3C21P1 210F RF35 RO4003 180 Degree hybrid Xinger
Contextual Info: ` Model X3C21P1-03S Rev B Hybrid Coupler 3 dB, 90° Description The X3C21P1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for LTE and WCDMA band applications. The X3C21P1-03S is

hybrid coupler 3dB 180

Abstract: 210F RF35 RO4003
Contextual Info: ` Model X3C19P2-03S Rev A Hybrid Coupler 3 dB, 90°° Description The X3C19P2-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for DCS, GSM, WCDMA and LTE band applications. The

hybrid coupler 3dB 180

Abstract: 180 degree 3dB coupler RF35 RO4003
Contextual Info: ` Model X3C07P1-03S Rev A Hybrid Coupler 3 dB, 90°° Description The X3C07P1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for US700 and LTE band applications. The X3C07P1-03S is