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    L7 SMD TRANSISTOR Search Results

    L7 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    L7 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


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    PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08

    transistor 2N2222 SMD

    Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
    Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


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    PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980

    smd transistor marking L6 NPN

    Abstract: SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5
    Text: Transistors SMD Type NPN Silicon Transistor 2SC1623 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE = 200 TYP. 0.55 High DC Current Gain: +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 VCE = 6.0 V, IC = 1.0 mA +0.05 0.1-0.01 +0.1 0.97-0.1


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    PDF 2SC1623 OT-23 smd transistor marking L6 NPN SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5

    MGH80

    Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
    Text: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE


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    PDF BLV909 AN98020 BLV909. SCA57 MGH80 TRANSISTOR SMD catalog AN98017 AN98020 AN98026 SMD TRANSISTOR

    smd-transistor DATA BOOK

    Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
    Text: APPLICATION NOTE 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION


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    PDF BLV2042 AN98018 BLV2042. 199lding SCA57 smd-transistor DATA BOOK SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6

    smd transistor A6

    Abstract: transistor SMD A6
    Text: DISCRETE SEMICONDUCTORS DAT M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain


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    PDF M3D392 BLF647 OT540A SCA73 613524/03/pp16 smd transistor A6 transistor SMD A6

    rogers 5880

    Abstract: UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A • High power gain


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    PDF M3D392 BLF647 OT540A SCA73 613524/03/pp16 rogers 5880 UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1

    l14 254

    Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
    Text: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The


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    PDF BLV904 AN98019 BLV904 BLV904. OT409. SCA57 l14 254 AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026

    SMD TRANSISTOR L6

    Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation


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    PDF BLT80 SC08b OT223 OT223 MAM043 SMD TRANSISTOR L6 BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3

    transistor bd139

    Abstract: bvc62 DK230 philips 2322 734 philips power transistor bd139 UT70-25 smd for bd139 smd L17 npn PNP UHF transistor BD139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor


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    PDF BLV859 SC08a OT262B BLV859 SCA51 127041/1200/02/pp16 transistor bd139 bvc62 DK230 philips 2322 734 philips power transistor bd139 UT70-25 smd for bd139 smd L17 npn PNP UHF transistor BD139

    bvc62

    Abstract: philips 2322 734 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 2322 722 philips power transistor bd139 chip die npn transistor PNP UHF transistor pin configuration transistor BD139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES


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    PDF BLV859 OT262B BLV859 SCA51 127041/1200/02/pp16 bvc62 philips 2322 734 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 2322 722 philips power transistor bd139 chip die npn transistor PNP UHF transistor pin configuration transistor BD139

    L7 smd transistor

    Abstract: smd transistor l7 smd transistor marking l7 transistor smd L7 MOSFET marking smd L7 marking smd transistor SMD IC MARKING NC KI2307BDS DIODE smd marking L7
    Text: Transistors IC SMD Type P-Channel 30-V D-S MOSFET KI2307BDS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 RoHS Compliant +0.1 1.3-0.1 +0.1 2.4-0.1 TrenchFET Power MOSFET 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


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    PDF KI2307BDS OT-23 L7 smd transistor smd transistor l7 smd transistor marking l7 transistor smd L7 MOSFET marking smd L7 marking smd transistor SMD IC MARKING NC KI2307BDS DIODE smd marking L7

    PTF141501A

    Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


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    PDF PTF141501A PTF141501A a150-watt, LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56

    smd transistor 805 239

    Abstract: SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1997 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B


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    PDF BLV857 OT324B SCA53 127067/0/02/pp12 smd transistor 805 239 SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857

    22 pf TEKELEC

    Abstract: BLF647 transistor 2001 H1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 22 pf TEKELEC transistor 2001 H1

    L6 smd

    Abstract: smd L6 smd marking l5 marking L6 npn smd marking L6 MARKING L4 l6 marking smd SMD l4 2SC4177
    Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4177 Features High dc current gain High voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V


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    PDF 2SC4177 100mA, -10mA L6 smd smd L6 smd marking l5 marking L6 npn smd marking L6 MARKING L4 l6 marking smd SMD l4 2SC4177

    c 129 transistor

    Abstract: BLU86 SMD ic catalogue
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile


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    PDF BLU86 OT223 c 129 transistor BLU86 SMD ic catalogue

    BLT50

    Abstract: philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File under Discrete Semiconductors, SC08b April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures


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    PDF BLT50 SC08b OT223 BLT50 philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl

    BLT50

    Abstract: ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA


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    PDF BLT50 OT223 OT223 BLT50 771-BLT50115 ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA


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    PDF BLT50 OT223

    BLU56

    Abstract: 35XL 809 npn smd 809 x transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU56 UHF power transistor Product specification January 1991 Philips Components Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures


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    PDF BLU56 OT223 BLU56 35XL 809 npn smd 809 x transistor

    358 SMD transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


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    PDF BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor

    smd transistor bd 37

    Abstract: S45 SMD BLT80 t8 smd transistor TRANSISTOR NPN c4 nf TRANSISTOR SMD 3b c4 3b smd transistor smd transistor l6 bd 9105 transistor smd Catalogue
    Text: Product specification Philips Semiconductors UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a


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    PDF BLT80 OT223 OT223 MAM043-1 711002b 010303e] URA778 MBA45Ã 711DflEb smd transistor bd 37 S45 SMD BLT80 t8 smd transistor TRANSISTOR NPN c4 nf TRANSISTOR SMD 3b c4 3b smd transistor smd transistor l6 bd 9105 transistor smd Catalogue

    smd transistor e7

    Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls
    Text: N AUER P H I L I P S / D I S C R E T E s iiiiv u n u u c io r s LTE B bbS3 S31 • DDSÖ7 3 7 BLT50 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION QUICK REFERENCE DATA RF performance at Ts < 60 °C in a common emitter class-B test circuit see


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    PDF bbS3S31 BLT50 OT223 OT223 MEA222 UBtM51 UEA223 smd transistor e7 smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls