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    PEPPERL+FUCHS GmbH MOUNTING-SET-AL2109-LATERAL

    PHOTOELECTRIC (DOORS, GATES, ELE
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    DigiKey MOUNTING-SET-AL2109-LATERAL Box 1
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    PEPPERL+FUCHS GmbH MOUNTING SET AL2109 LATERAL

    Photoelectric (Doors, Gates, Elevators) |Pepperl+Fuchs MOUNTING SET AL2109 LATERAL
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    Newark MOUNTING SET AL2109 LATERAL Bulk 1
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    PEPPERL+FUCHS GmbH MOUNTING SET AL2109 LATERAL (ALTERNATE: 187997)

    Sensor, Photoelectric, (Doors, Gates, Elevators), 187997 | Pepperl+Fuchs Factory Automation MOUNTING SET AL2109 LATERAL
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    RS MOUNTING SET AL2109 LATERAL (ALTERNATE: 187997) Bulk 1
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    HellermannTyton 157-00226

    Cable Tie Mounts T50SOSWSP5E 50LB CABLE TIE
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    TTI 157-00226 Each 50,000 500
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    Nexperia 74LVC1G66GW-Q100,1

    Analog Switch ICs SOT353-1 BILATERAL SWITCH
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    TTI 74LVC1G66GW-Q100,1 Reel 39,000 3,000
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    LATERAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGR19045XF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045EF Hz--1990 AGR19045XF

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    12065G105AT2A

    Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35

    BTS 132 SMD

    Abstract: No abstract text available
    Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package


    Original     		PDF PD57002-E PowerSO-10 BTS 132 SMD

    bare die zener

    Abstract: zener wafer
    Text: SD5000 / SD5400 SERIES Linear Systems replaces discontinued Siliconix SD* product line SD5000 / SD5400 series Quad N-Channel Enhancement Mode DMOS Lateral Switches SD5000 / SD5400 ultra-fast switches offer improved accuracy, speed and throughput, with less glitching or distortion than JFETs


    Original     		PDF SD5000 SD5400 SD5400 70ohms bare die zener zener wafer

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog HC-B 24-TFQ-76/M1PG21S Order No.: 1771765 Sleeve housing, for double locking latch, height 76 mm, with screw connection, 1x Pg21, lateral cable entry


    Original     		PDF 24-TFQ-76/M1PG21S PC-2009) 24-TFQ-76/M1PG21S

    D201

    Abstract: No abstract text available
    Text: Extract from the online catalog HC-B 24-TMB-100/O1STM40S-STA Order No.: 1604625 HEAVYCON ADVANCE standard powder-coated sleeve housing B24, with bayonet locking, height 100 mm, with 1xM40 thread, lateral cable


    Original     		PDF 24-TMB-100/O1STM40S-STA 1xM40 PC-2009) 24-TMB-100/O1STM40S-STA Torx20, D201

    AGR18125EF

    Abstract: AGR18125E AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
    Text: Product Brief April 2004 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E AGR18125E PB04-078RFPP PB04-012RFPP) AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A

    MRF9045

    Abstract: MRF9045S MRF9045SR1
    Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045/D MRF9045 MRF9045S MRF9045SR1 MRF9045 MRF9045S MRF9045SR1

    960-1215 MHz transistor 20W

    Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
    Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.


    Original     		PDF 0912LD20 0912LD20 20Wpk 960-1215 MHz transistor 20W CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v ADG419 capacitor 226 20V 47pf 55QT

    capacitor siemens 4700 35

    Abstract: No abstract text available
    Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of


    Original     		PDF 1-877-GOLDMOS 1301-PTF10122 capacitor siemens 4700 35

    J64-1

    Abstract: UPF20120 ultrarf J296 J6-41 J641
    Text: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum


    Original     		PDF UPF20120 30dBc J64-1 UPF20120 ultrarf J296 J6-41 J641

    6603 Shenzhen

    Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
    Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    AGERE

    Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A
    Text: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26045E AGR26045E AGR26045EU AGR26045EF PB04-080RFPP PB04-022RFPP) AGERE AGR21045F AGR21045U AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A

    J406

    Abstract: J248 J425 ultrarf UPF2245 J242
    Text: URFDB Sec 14_2245 11/3/99 11:23 AM Page 14-1 UPF2245 45W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,


    Original     		PDF UPF2245 30dBc J406 J248 J425 ultrarf UPF2245 J242

    AGR21060EF

    Abstract: AGERE AGR21060E AGR21060EU JESD22-C101A JESD22-A114B
    Text: Preliminary Product Brief November 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide


    Original     		PDF AGR21060E AGR21060E AGR21060EU AGR21060EF PB04-015RFPP PB03-096RFPP) AGR21060EF AGERE AGR21060EU JESD22-C101A JESD22-A114B

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    Motorola MRF183

    Abstract: GS -L Capacitor
    Text: MOTOROLA O rder this docum ent by M RF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S, R1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­


    OCR Scan     		PDF RF183/D MRF183/D Motorola MRF183 GS -L Capacitor

    SD5000N

    Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
    Text: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.


    OCR Scan     		PDF SD5000/5400 SD5000I SD5000N SD5001N SD5400CY SD5401CY AN301, SD5001 sd5001 siliconix sd5400 aros SD5000 SILICONIX SD5000

    pj 809

    Abstract: No abstract text available
    Text: Product Nomenclature and Ordering Information DMOS Proprietary Products RB HI-REL RB = MIL-STD-883 for Arrays SX = Similar to JANTX SXV = Similar to JANTXV FAMILY TYPE D = Vertical DepletionMode DMOS Discretes L = Lateral DMOS Discretes T = Low Threshold DMOS


    OCR Scan     		PDF MIL-STD-883 LP0701) TN2501) O-236AB OT-23) O-252) T0-220 O-243AA OT-89) O-220 pj 809

    sd5400cy

    Abstract: 5401CY 5400CY G31E sd211de
    Text: B E S ffA SD5400 SERIES N-Channel Lateral DMOS Quad FETs The Siliconix SD5400 series is a monolithic array of single-pole, single-throw analog switches designed for high-speed switching In audio, video and high frequency applications in communications, instrumentation, and process control. Designed with


    OCR Scan     		PDF SD5400 SD5400CY SD5401CY SD5401 5401CY 5400CY G31E sd211de

    sst2100

    Abstract: LPD-12
    Text: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high


    OCR Scan     		PDF SD/SST2100 OT-143 LPD-12 sst2100 LPD-12