LB 137 TRANSISTOR Search Results

LB 137 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

LB 137 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ITB68 Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS	OCR Scan	9305-F-080 DO-35 DO-41 DO-15 DO-201AD ITB68	PDF
ESM1350 Abstract: FIR31 r2 137 sm 889 ESM135 ESM 470 Contextual Info: ESM135 ESM 137 NPN S ILIC O N TR A N S IS TO R S . E P IT A X IA L BASE TRANSISTORS S ILIC IU M NPN, BASE EPITAXIEE ESM 139 Compl. of ESM 136, ESM 138, ESM 140 P R E L IM IN A R Y D A T A N OTICE PR ELIM IN A IR E - LF large signal power amplification Am plification BF grands signaux de puissance	OCR Scan	ESM135 T0-220 drawingCB-117on CB-117 10/is ESM1350 FIR31 r2 137 sm 889 ESM 470	PDF
BDI35 Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139 Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpE = 40 Min @ Iq = 0.15 Adc	OCR Scan	BD135/D BD135 BD137 BD139 O-225AA BDI35 BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139	PDF
Contextual Info: FMM T3905 FMM T3906 SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT3905 - 2W FMMT3906 - 2A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb = 25°C	OCR Scan	T3905 T3906 FMMT3905 FMMT3906 FMMT3905/3906 FMMT3904 FMMT3905 -10/jA	PDF
BD139 Abstract: b*137 bd139 Complement power transistor bd137 power transistor bd139 transistor bd137 BD137 bd137 Transistor BD135 BD136 Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 VcBO : BD137 : BD139 C ollector E m itter Voltage : BD135	OCR Scan	KSD135/137/139 BD136 BD140 BD135 BD137 BD139 O-126 BD139 b*137 bd139 Complement power transistor bd137 power transistor bd139 transistor bd137 BD137 bd137 Transistor	PDF
D137 transistor Abstract: D135 BD139B BD139 bd137b BD136 Contextual Info: BD135/137/139 NPN EPITAXIAL SILICO N TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, B D 138 and B D 140 respectively ABSO LUTE MAXIMUM RATINGS Symbol Characteristic Collector B ase Voltage Collector Emitter Voltage	OCR Scan	BD135/137/139 O-126 BD136, 150mA 500mA, D137 transistor D135 BD139B BD139 bd137b BD136	PDF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and com puter monitors.	OCR Scan	BU2507AX 100Pc/PD2SC	PDF
bo 139 Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140 Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T \| XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140	PDF
Contextual Info: 4ÔE D 0 1 3 3 1 0 7 GGDD42D 7 b l H S N L B G137 chip family The G 137 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation power devices. SEMELAB LT]> 'î- 3 5 'O l • UP TO 35 AMPS	OCR Scan	GGDD42D -550/xm 19mils IMPRUV40 BUX10 BDY58 BUX11 BUW91 BUX12 BUV42	PDF
transistor 10 s125 Abstract: t4sb BULD138 S125 Contextual Info: SGS-THOMSON IM0m ELEOT@I]O<£l B U L D 138 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION	OCR Scan	BULD138 O-251) G0bSb70 O-251 0Db5b71 transistor 10 s125 t4sb S125	PDF
2sb1243 TRANSISTOR Contextual Info: 2SB1243 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE(sat) = -0.5 V at • complementary pair with 2SD1864 2SB1243 (ATV TV2) lc/lB = -2 A /-0 .2A Applications • medium power amplifier	OCR Scan	2SB1243 2SD1864 2SB1243 2sb1243 TRANSISTOR	PDF
2N2905 Abstract: 2n2905a 2N2905 2N2219 transistor 2N2905 2N2905 NPN transistor Contextual Info: Philips Semiconductors Product specification PNP switching transistors FEATURES 2N2905; 2N2905A PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching	OCR Scan	2N2219 2N2219A. 2N2905; 2N2905A 2N2905 2N2905A 2N2905 2N2219 transistor 2N2905 2N2905 NPN transistor	PDF
VCS-60V Abstract: KSA708 KSC1008 Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D KSC1008 \| 7*ib4].42 G O O b ö b b 4 \| T -^ 9 - NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • • • • Complement to KSA708 y ig h Collector-Base Voltage Vcso=80V Collector Current lc =700mA	OCR Scan	7Tb414a KSC1008 KSA708 Vcso-80V 700mA 800mW 100/jA, T-29-23 VCS-60V KSA708	PDF
lem HA Abstract: transistor bu2520d BU2520D Contextual Info: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic	OCR Scan	002037b BU2520D lem HA transistor bu2520d BU2520D	PDF

BU2506DX Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television	OCR Scan	BU2506DX BU2506DX	PDF
138b Abstract: BD139 136B BD136 bd136 N Contextual Info: • 7^537 0056363 5 ■ SCS-THOM SON M O lim iC T « ! S G S-TH0MS0N ^ 3 3 - H _ BD136 B D138-BD140 3QE D MEDIUM POWER GENERAL PURPOSE TRANSISTORS DESCRIPTION The BD136, BD138, BD140 are silicon epitaxial pla nar PNP transistors in Jedec TO-126 plastic	OCR Scan	BD136 D138-BD140 BD136, BD138, BD140 O-126 BD135, bd137 BD139. 138b BD139 136B bd136 N	PDF
2sd2012 transistor Contextual Info: TOSHIBA 2SD2012 Transistor Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier F e a tu re s • High DC Current Gain : 100 Min. • Low Saturation Voltage ~ ^CE (Satj = 1.0V (Max.) (Ic = 2A, lB = 0.2A) • High Power Dissipation - Pc = 25W (Tc = 25~C )	OCR Scan	2SD2012 2SB1375 Tc--25 2sd2012 transistor	PDF
bf 233 Abstract: BF233 BF234 REED RELAY 15003 bf 137 Contextual Info: BF 233 BF 234 S I L I C O N P L A N A R NPN AM MIXER OSCILLATOR, AM-FM IF AMPLIFIER The BF233 and BF 234 are silico n planar epitaxial NPN transistors in T O -18 epoxy package. They are intended fo r use in AM m ix e r/o s c illa to r stages, IF am plifiers for	OCR Scan	BF233 bf 233 BF234 REED RELAY 15003 bf 137	PDF
Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137	OCR Scan	BD135/137/139 BD136, BD140 BD135 BD137 BD139	PDF
BD139 N Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139 Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135	OCR Scan	BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 BD139 N TRANSISTOR TC 137 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139	PDF
bu808 Abstract: bu808 transistor 139 NPN transistor TO-3 Transistor AC 141 TO3 philips transistor bu808 DBU808 Contextual Info: r[ N AMER PHILIPS/DISCRETE ^53=131I UQDlâbS? 0 • t SSE D I BU808 T -3 3 -L 5 L SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended fór use in three-phase AC motor control systems.	OCR Scan	BU808 bbS3131 T-33-75 7Z81799 bu808 bu808 transistor 139 NPN transistor TO-3 Transistor AC 141 TO3 philips transistor bu808 DBU808	PDF
BSS65 Abstract: BSS65R Contextual Info: PLXSSEY SEMICOND/DISCRETE 03 PNP silicon planar high speed switching transistor DE I 722DS33 ODOLbSH 4 BSS65 , T - 3 7 -// A B S O L U T E M A X I M U M R A T IN G S Param eter Sy m b o l BSS65 U nit V CBO -1 2 V C o lle cto r-E m itte r V o lta g e V CEO	OCR Scan	722DS33 BSS65 BSS65 722GS33 BSS65R BSS65R	PDF
w26c Abstract: ESM 11 thomson ESM136 15S2 25CC Contextual Info: ESM 136 ESM 138 ESM 140 PNP SILICON TRANSISTORS EPITAXIAL BASI TRANSISTORS PNP S ILIC IU M A BASE EPITAXIEE Compì, of ESM 135, 137, 139 PRELIMINARY DATA NO TICE PR EL IM IN A IRE LF large signal power amplification Am plification BF grands signaux de puissance	OCR Scan	O-220 drawingCB-117on CB-117 w26c ESM 11 thomson ESM136 15S2 25CC	PDF
LB 122 Abstract: sc 1365 MPS571 MPS571B LB122 Contextual Info: 1SE D \| MOTOROLA MQ TO R C LA fc>3b72SM SC b \| XSTRS/R F T -2 1 -JS "“ • SEM ICOND UCTOR TECHNICAL DATA _ MPS571 MMBR571 The RF Line N P N Silicon High Frequency Transistors LOW N O ISE HIGH RF GA IN . designed for low noise, wide dynamic range front-end amplifiers and low-noise	OCR Scan	3b72SM MPS571 MMBR571 O-226AA A/500 LB 122 sc 1365 MPS571B LB122	PDF

LB 137 TRANSISTOR Search Results

LB 137 TRANSISTOR Result Highlights (5)

LB 137 TRANSISTOR Datasheets Context Search

ITB68

ESM1350

BDI35

BD139

D137 transistor

bo 139

transistor 10 s125

2sb1243 TRANSISTOR

2N2905

VCS-60V

lem HA

BU2506DX

138b

2sd2012 transistor

bf 233

BD139 N

bu808

BSS65

w26c

LB 122