LC BRIDGE CIRCUIT Search Results

Contextual Info: “BIG IDEAS IN BIG POWER” • PowerTecn FET BIPOLAR POWER LINEAR LC-1002 The LC-1002 Power Linear® consists of a quad FET input circuit driving a 450V, 90A bipolar output transistor. A fly­ back diode is provided to allow the use of these devices as driving elements in H-bridge or 3-phase bridge circuits

C1022

Abstract: IRGTDN300K06 "welding circuit " IGBT 1022 MC
Contextual Info: Provisional Data Sheet PD-9.1199 Rectifier S IRGTDN300K06 “HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT Half-Bridge -o3 r VCE = 600V lc = 300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

OF IGBT 300A 500V

Abstract: IRGTDN300M06 ETH9
Contextual Info: brtemational Im i Rectifier Provisional Data Sheet PD-9.1179 IRGTDN300M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Half-Bridge —O3 VCE = 600V lc = 300A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

12V 5A rectifier

Contextual Info: PH26560 Series Preliminary POWER HYBRID 15A DUAL 1/2 H-BRIDGE DRIVERS DESCRIPTION FEATURES • 15A Drive Capability • 4 Drivers with Catch Rectifiers • Fast Switching Speeds ton =35nsec @lc =5A, Vcc =30V toff =300nsec @lc =5A, Vcc =30V • 100V Breakdown on

IRGTIN075M12

Abstract: diode C546 C541 DIODE DIODE C545 irgtin igb1 diode c544 Diode C541
Contextual Info: International P r]Rectifier PM1,H' IRGTIN075M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Half-Bridge p i f-o 3 VCE= 1200V 4o— 1|^ , lc = 7 5 A 5=— -4_ •Rugged Design ■Simple gate-drive ■Switching-Loss Rating includes all “tail"

VQE 23 E

Abstract: VQE 22 e
Contextual Info: euoec F BSM 50 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 120 DN2 1200V 78A lC Package Ordering Code HALF-BRIDGE 1 C67076-A2105-A70 Maximum Ratings Parameter

transistors c458

Abstract: btm 110 module C458
Contextual Info: International khlRectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

C1019

Abstract: 200a 300v mosfet
Contextual Info: International [xôrIRectifier Provisional Data Sheet PD -9.1198 IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

Contextual Info: International lÏMtlRectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK Half-Bridge n — o3 V CE = 6 0 0 V lc = 5 0 A V ce O N < 2 .7 V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"

TR C458

Abstract: transistors c458 C458
Contextual Info: International ^R ectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

Contextual Info: International ür]Rectifier Provisional Data Sheet PD-9.1158 IRGTIN150M06 Low conduction loss IGBT “HALF-BRIDGE" IGBT INT-A-PAK Vce=600V lc = 150A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

200a 300v mosfet

Contextual Info: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

MAX138

Contextual Info: GBU8A ~ GBU8M VOLTAGE 50V ~ 1000V 8.0 AMP Glass Passivated Bridge Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free. LC-35 .874 22.2 .860(21.8) n Glass passivated die construction n Ideal for printed circuit board

200a 300v mosfet

Contextual Info: Provisional Dd.tsi Sh ôt PD*9.1198 1°R Rectifier IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“ losses •Short circuit rated

DIODE C536

Abstract: C536 IRGTIN050M12 C535 transistors C537 DIODE C538 IOR 536 mosfet 600V 50A irgtin IG8T
Contextual Info: PD-9.1167 bitemational ïorJRectifier IRGTIN050M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 50A • Rugged Design .Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated V ce ON < 2.7V tsc> 10 ms

igbt 500V 50A

Abstract: mosfet 500V 50A mosfet 600V 50A
Contextual Info: International ^Rectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 50A V ce ON < 2.7V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated

IRGTIN150K06

Abstract: c1009
Contextual Info: International HRectifier Provisional Data Sheet PD-9.1194 IRGTIN150K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Vœ = 600V lc = 150A Vce ON < 2.7V • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses •Short circuit rated

siemens igbt BSM 75 gb 100

Abstract: GTS FC-22 1B02 siemens igbt BSM 150 gb 100 d gts fc-518ls
Contextual Info: SIEMENS IGBT Module BSM 75 GB 160 D 750gb16a doc VCE= 1600 V /c = 2* 100 A at r c = 25°C lc = 2* 75 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half bridge Type BSM 75 GB 160D

IRGTDN100M12

Contextual Info: bitemational ^ R e c tifie r IRGTDN100M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce ON < 2.5V tsc> 10 ms

c548 st

Contextual Info: International B Rectifier p— »d-»« « IRGTIN100M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A «Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losse s .Short circuit rated Vce ON < 2.7V

Contextual Info: International k*r]Rectifier Provisional Data Sheet PD-9.1155 IRGTIN050M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK VŒ = 600V lc = 50A Vce ON < 2.0V .Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail" losses • Short circuit rated

C1017

Contextual Info: Provisional Data Sheet PD-9.1200 International [^Rectifier IRGTDN150K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 150A • Rugged Design •S im ple gate-drive •S w itching-Loss Rating includes all "tail" losses •S h ort circuit rated

OF IGBT 300A 500V

Abstract: irgtdn300m06
Contextual Info: International Rectifier Provisional Data Sheet PD-9.1179 IRGTDN300M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design •S im p le gate-drive •Switching-Loss Rating includes all "tail" losses •S ho rt circuit rated

shct

Abstract: WE VQE 24 E IRGTDN150M12 IR 501
Contextual Info: International ^R ectifier PD9206 IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V Œ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail'1 losses •Short circuit rated Vce O N < 2 .5 V