LD-18A REGULATOR Search Results

1RF640

Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note
Contextual Info: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA

Contextual Info: FU JI 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,1 m 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI 2SK2522-01MR N-channel MOS-FET 200V o,i8a 18A 40 W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK891

Abstract: n channel t mos transistor
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 0T-MOSII 2SK891 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. . L o w D r a i n -Source ON Resistance :R d s ON)= 0.14il(Typ.)

IRF240

Abstract: IN4723 irf640 IRF241 diodes IN4723 IRF243 IRF242 IRF641 IRF642 IRF643
Contextual Info: • IRF243 ■ IRF643 ■ IRF242 ■ IRF642 ■ IRF241 ■ IRF641 IRF240 IRF640 IRF240 ■ IRF241 ■ IRF242 ■ IRF243 IRF640 ■ IRF641 ■ IRF642 ■ IRF643 a S ilic o n ix Advanced Information 200V MOSPOWER N-Channel Enhancem ent-Mode These power FETs are designed especially for o ffline sw itching regulators, converters,

Contextual Info: FU JI 2SK2256-01 N-channel MOS-FET FAP-IIA Series 250V > Features 0,180 18A 80W > Outline Drawing - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI 2SK2256-01 N-channel MOS-FET FAP-IIA Series 250V 18A 80W > Outline Drawing > Features - 0 ,1 8 0 High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

IRF640 applications note

Abstract: IRF640 IRF642 IRF643 harris IRF640 circuit TA17422 IRF643 RF1S640SM9A for irf640 irf641
Contextual Info: IRF640, IRF641, IRF642, SEMICONDUCTOR IRF643, RF1S640, RF1S640SM IHARRIS 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate

Contextual Info: IRF640, RF1S640SM Semiconductor Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 IRF640 circuit IRF642 RF1S640
Contextual Info: IRF640, IRF641, IRF642, RF1S640, RF1S640SM H A R R IS S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 16A and 18A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

2SJ464

Contextual Info: TOSHIBA 2SJ464 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ464 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Sorce ON Resistance : Rd S (ON)= 64mO (Typ.)

Contextual Info: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

irf9z34

Abstract: irf9z34 mosfet LT 424 M7 RECTIFIER
Contextual Info: International S Rectifier PD-9.648A IRF9Z34 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - "6 0 V

irfp240

Abstract: IRFP242 IRFP243 Harris Semiconductor irfp240 Mosfet irfp240
Contextual Info: H a IRFP240, IRFP241, IRFP242, IRFP243 r r i s ” “ I CONDUCTOE 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V • High Input Im pedance These are N-Channel enhancement mode silicon gate

Contextual Info: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: MASSES 001 4552 International E?R Rectifier PD-9.568A IRC640 HEXFET Power MOSFET • • • • • • S3T • IN R INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

f640

Abstract: IR 643 643R
Contextual Info: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

IRL5Y7413CM

Contextual Info: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94164 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.022Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF9140

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF (10A) 55V

Abstract: IRF5YZ48CM
Contextual Info: PD - 94019A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5YZ48CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5YZ48CM 55V RDS(on) 0.029Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRFN9140

Abstract: JANTX2N7236U JANTXV2N7236U
Contextual Info: PD - 91553D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance