LEM VCE Search Results

Contextual Info: "BIG IDEAS IN 100 AMPERE POWER DARLINGTON MT-6002 FEATURES O Vceo.400V lem. 100A Vcb0.450V Pd.385W Veb0. 10V ejc . 0.45°C/W

V67D

Abstract: BDV67B
Contextual Info: BDV67A; B BDV67C; D 11 PHILIPS INTERNATIONAL SbE D • 711002b 0 QM33T2 Til M P H I N T - 13 DARLINGTON POWER TRANSISTORS N P N ep ita x ia l base D arling to n transistors fo r audio o u tp u t stages and general a m p lifie r and switching applications. PNP co m p lem ents are B D V 6 6 A , B, C and D. M atch ed c o m p lem en tary pairs can be supplied.

2SB561

Abstract: 2SB831 2SD1101 2SB83
Contextual Info: HITACHI 2SB831 SILICON PNP EPITAXIAL LOW FREQ UEN CY AM PLIFIER Complementary pair with 2SD1101 „ o.i b : ; s !. Emil icr 2. Base Í , Collector <Dimcr«sii?ns in mm MPAK) • ABSO LUTE MAXIMUM RATINGS (Tii=25°C) I lem Symbol MAXIMUM COLLECTOR DISSIPATION

tl 0741

Abstract: fuji ipm 6MBP15RA120 6MBP15RA AC2500 P619 6MBP1 7z fuse AC20DV
Contextual Info: This material and the Information heroin is the properly of Fuji Electric Co .Lid They shall be neither reproduced, copied lem. or disclosed in any way whatsoever for the use of any third pany.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.

IQ226075

Abstract: LF101 cte table
Contextual Info: POWEREX W 3=iE D I NC IM E ilE 7S=î4b21 GDOM'ill S H P R X IQ226075 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 LeM ans, France (43)41.14.14 Chopper IGBTMOD Power Module

KSE350

Contextual Info: KSE350 PNP EPITAXIAL SILICON TRANSISTOR HIGH COLLECTO R-EM ITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORM ER • C o m p lem en t to K S E 3 4 0 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- B ase Vo ltage

CTC 880 transistor

Abstract: CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor
Contextual Info: T O ñ H EW LETT’ m LEM PA CK A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 usee, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout

U01A

Contextual Info: KSD471A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C o m p lem en t to KSB564 A • C o llecto r C u rren t lc » 1A • C o llecto r D issip atio n Pc = 800 *rtW TO-82 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating

Contextual Info: PNP EPITAXIAL TIP145/146/ 147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN M INh FE = 1000 @ V CE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p lem en t to T IP 1 4 0 /1 4 1 /1 4 2

6MB 125 S-1 2 0 l

Abstract: 500C 6MBI10S-120
Contextual Info: X This m a terial and ihe Inlormeticn herein is he property of Fuji Etectnc C o Kd They sha« be neither «^produced, co p ie d lem . or disclosed in any way w h atso ever for the use of a n y third party.nor used for the manufacturing purposes w ith o u t

Contextual Info: SOT89 PIMP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 2 - JUNE 199S_ O FEATU RES * High breakdown and low saturation voltage A P P LIC A T IO N S * Suitable for video output stages in TV sets * Sw itching pow er supplies C O M P LEM EN TA R Y T Y P E 8F621 - BF620

2SB1078

Abstract: 2SD1377
Contextual Info: HITACHI 2S B 1078 -SILICON PNP EPITAXIAL LOW FR EQ UENC Y POWER AMPLIFIER C O M PLEM ENTARY PAIR WITH 2S D 1 3 7 7 ® I. Haw I . Collccmr Flange ?. Emitter (Diminuions in mm) (JEDEC TO -220AB) I AB S O LU TE M AXIM UM R ATING S (Ta=25°C) I lem Symbol

transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Contextual Info: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 4 -JUNE 1996 FEATU RES * Low equivalent on-resistance; RCEjMti 25 0 m ii at 1A PA R TM A R KIN G D E T A IL S C O M P LEM EN TA R Y T Y P E - 589 FMMT489 ABSOLUTE MAXIMUM RATINGS. PARA M ETER

2SC2489

Abstract: 2SA1065 2SA1064 2SC2488
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 75C D | b“135654 DDimfl? & | 72C 0 9 1 8 7 D 2SC2488 2SC2488 '> ij zj > NPN i t I t M / S i NPN Epitaxial Mesa t \z j* Amplifier, High Pow er A m p­ lifier U /C om p lem en ta ry Pair w ith 2SA1064 2SA1064 1 Unit ^ mm <M o •H

bd330

Contextual Info: BD329 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N - I’ -N tr a n s is to r in a SO T-32 p la s tic package, intended fo r c a r -radio output stages. P-N -P co m p lem en t is BD330. M atch ed p a irs can be supplied. Q UICK REFERENCE D A T A

transistor KIN

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 -AUGUST 1995 Q FEATU RES * Suitable for AF drivers and output stages * High collector current and Low Vct sat( C O M P LEM EN TA R Y T YP E BCP53 PA R TM A R KIN G D E T A ILS BCP56 B C P 5 6 - 10 B C P 5 6 - 16

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR _ ISSU E 3 - NOVEM BER 1995 FEATU RES * L o w equivalent on-resistance; RCE sat 250mQ at 1A C O M P LEM EN T A R Y TYPE - FM M T549 P A R T M A R K IN G D ET A IL - 449 ABSOLUTE M A X IM U M RATINGS.

Contextual Info: FMMT549 FMMT549A SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - OCTOBER 1995 O FEATURES * Low equivalent on-resistance; RCE S8t|250m ii at 1A * 1 A m p continuous current C O M P LEM EN T A R Y TYPES - FM M T549 F M M T 44 9 F M M T 5 4 9 A - N/A

L1101-12

Abstract: RISC86 AK-02 MMDS CCS AMD 754 socket pinouts
Contextual Info: Preliminary Information 21049H/0—Septem ber 1998 AM D £1 Mobile AMD-K6 Processor Data Sheet About This Data Sheet The M ob ile AMD-K6® P rocessor D ata S h e e t is a su p p lem en t to th e AMD-K6® Processor Data Sheet, order# 20695. When combined, the two data sheets provide the

Contextual Info: CRO D E S C R IP T IO N CL313, CL314 are O U J I«J CL314 SILICON TRANSISTORS co m p lem en tary silicon p lan ar ep itax ial tr a n s is to r s 'fo r use A F sm all sig n al a m p lifie rs and drivers. Cl .313 60V 50V 6V ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

J 3305

Abstract: 7MBR100SB060 100SB-060 CD11E
Contextual Info: This m aterial and iho Information herein is ih« proper ty of F up Elecwc Co,U d.They shillbe neither reproduced. c op ie d lem. or dfeclo&ed in any way w hatsoever lor the use of any third p a rtyn o r used for the manufacturing p urp o se s without the e ip re ss w ni ten consent of Fuji Electric Co_ Ltd.

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1805 POW ER AM PLIFIER APPLICA TIO N S U n it in mm j 1 5 .8 ± 0 .5 | • C om p lem en tary to 2SC4690 • R ecom m end for 70W H ig h F id e lity A udio F req u en cy A m plifier •n 3.6 MAX { o u tp u t S tage. RATING

Contextual Info: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTA 965 (Unit in mm APPLICATIONS ) P o w e r A m p lifie r A p p lic a tio n s. D r i v e r S t a g e A m p lifie r A p p lic atio n s. ( »FEATURES ) • C om p lem entary to K T C 2235 • MAXIMUM RATINGS