Untitled
Abstract: No abstract text available
Text: N AMER PH ILI PS/ DI SC RE TE TOD D LL53T31 OOlOOflb T • m MAINTENANCE TYPES BYX32 SERIES _ J \ SILICON RECTIFIER DIODES Diffused silicon diodes in metal envelopes w ith ceramic insulation, intended fo r power rectifier application. The series consists o f the follow ing types:
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LL53T31
BYX32
BYX32â
1600R
1000R
1200R
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BYV92-500M
Abstract: No abstract text available
Text: ii N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 2SE D LL53T31 0 0 2 2 b b l 0 • B Y V 9 2 tjh H Ib b 7 -0 2 -1 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery
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LL53T31
BYV92-300
30issible
bhS3T31
BYV92
T-03-19
bbS3T31
QD22bb7
BYV92-500M
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Untitled
Abstract: No abstract text available
Text: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.
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PO40/44A
OT90B
PO40/44A
P040A,
P042A,
P043A,
P044A
satur10'
bbS3T31
0D35S50
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Untitled
Abstract: No abstract text available
Text: • bbsa^ai □□25712 621 M A P X N AMER PHILIPS/DISCRETE PMBD 914 b?E D J V SILICON PLANAR EPITAXIAL HIGH SPEED DIODES Silicon epitaxial high speed diodes in a microminiature plastic envelope. It is intended for high-speed switching in thick and thin-film circuits.
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LL53T31
7Z613261
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philips 4859
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency
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bbS3T31
D05SB11
BFR505
BFR505
philips 4859
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BGY41
Abstract: BGY41B BGY41A
Text: N AMER PHILIPS/BISCRETE I 86D 0 1 0 1 4 ObE D bbS3.131 0Q132SS M P T -w -d q -o r BGY40A BGY41A J _ BGY40B BGY41B U.H.F. POWER AMPLIFIER MODULES A range of broadband u.h.f. modules, primarily designed for mobile communication equipment, operating directly from 12 V electrical systems.
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0Q132SS
BGY40A
BGY41A
BGY40B
BGY41B
BGY40A
BGY41A
LL53T31
BGY41
BGY41B
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Untitled
Abstract: No abstract text available
Text: BYX10G J V RECTIFIER DIODE Double-diffused glass-passivated rectifier diode in hermetically sealed axial-leaded glass envelope, intended for use in general industrial applications where a high repetitive peak reverse voltage is required. QUICK REFERENCE DATA
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BYX10G
OD-57.
0032T40
LL53T31
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BFR29
Abstract: N-CHANNEL INSULATED GATE TYPE
Text: BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in cases where high input impedance, low gate leakage currents and low noise figures are of importance.
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BFR29
BFR29
N-CHANNEL INSULATED GATE TYPE
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690 lc
Abstract: 100S BUV90F IEC134 NPN POWER DARLINGTON TRANSISTORS
Text: bTE D • bbS3T31 GOEöM'i'i IDE * A P X BUV90F i i N AUER PH ILIPS /DISCRETE _ y ' - SILICON DIFFUSED DARLINGTON POWER TRANSISTORS High-voltage, m onolithic npn power Darlington transistors in aSOT199 envelope intended fo r use in
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BUV90F
aSOT199
690 lc
100S
BUV90F
IEC134
NPN POWER DARLINGTON TRANSISTORS
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bt 44a
Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
Text: P040/44A _ OPTOCOUPLEh I » Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.
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P040/44A
OT90B
P040/44A
P040A,
P042A,
P043A,
P044A
LL53T31
bt 44a
12945
WE VQE 11 E
WE VQE 23 F
WE VQE 24 E
P041
P043A
TI210
331 Optocoupler
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ic TT 2222
Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
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BLY89A
PL-25W
ic TT 2222
transistor tt 2222
BLY89A
TT 2222 npn
Transistor bly89a
TT 2222
npn 2222 transistor
yl 3710
dfv 36
mb 3712
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BDS61A
Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Text: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a
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BDS61
OT223)
BDS60/60A/60B/60C.
OT223
BDS61A
BDS61B
BDS61C
smd npn darlington
Darlington NPN Silicon Diode
smd diode LC 61
SMD 547 DIODE
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BF966
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.
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bbS3T31
aQ12c
BF966
BF966
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Untitled
Abstract: No abstract text available
Text: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are
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BFQ135
OT172A1
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Untitled
Abstract: No abstract text available
Text: _ J V TIP145 TIP146 TIP147 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. N-P-N complements are TIP140, TIP141
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TIP145
TIP146
TIP147
OT-93
TIP140,
TIP141
TIP142.
TIP145
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transistor 1264-1
Abstract: bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
Text: Philips Semiconductors IH ^ 53*131 GG3 1 2 2 2 13T H A P X ^^^Productspecification NPN 5 GHz wideband transistor “ 1 £ N DESCRIPTION A ME R BFG90A P H IL IP S /D IS C R E T E b 'I E D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope.
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BFG90A
OT103
OT103.
transistor 1264-1
bfg90a
transistor npn d 2058
BFG90
transistor J 4081
FP 801
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53^31 0014731 T BUZ347 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUZ347
T0218A
bb53T31
001473S
T-39-13
001473b
LL53T31
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BU808
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 5SE D ^53=131 QOlfibS? 0 • I _J B U 808 y r s i - i t r SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended for use in three-phase AC motor control systems.
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T-33-T5
T-33-75
7Z81799
BU808
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BFW11
Abstract: bfw11 equivalent BFW10 in drain resistance
Text: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential
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BFW10
BFW11
bb53T31
DQ3S77b
BFW11
bfw11 equivalent
BFW10 in drain resistance
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BY229
Abstract: 8y22 ir receiver diode 800R BY229-200 D8403 D8379 D8394
Text: 25E D • ^53^31 G 0 2 2 2T 3 â BY229 SERIES N AMER P H I L I P S / D I S C R E T E 7 = 0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended fo r use in chopper applications as well as in
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G022213
BY229
BY229-200
8Y229-200R
BY229-
00253G3
T-03-17
220/iF
D8663
8y22
ir receiver diode
800R
D8403
D8379
D8394
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SL550
Abstract: SL5500 SL5501 SOT-90B 340 opto isolator SL5511
Text: SL5500 SL5501 SL5511 OPTOCOUPLERS Optically coupled isolators consisting o f an infrared em itting GaAs diode and a silicon npn photo transistor w ith accessible base. Plastic envelopes. Suitable fo r T T L integrated circuits. Features • • • High o u tpu t/in pu t DC current transfer ratio
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SL5500
SL5501
SL5511
SL5501.
SL5500.
SL55t1.
SL550
SL5500
SL5501
SOT-90B
340 opto isolator
SL5511
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