LN55 Search Results

lN5245B

Abstract: AP-12 DO-213AB lN759 lN5534 DO213AB Z4.19M 213AB BZV55C15
Contextual Info: REFERENCE DIODES, UNDER 5 W Item Number Part Nun:tber Vz Nom. @ V (A) Iz Reference Diodes, Vz 5 10 APll.0 ZMM5241 1N5241 APD11.0B MLL4741A ZM4741 1N3021B 1N5564B APDll.0A MLL4741 ~~~~~~A 15 20 lN5564A APDll.0 1N3021 BZM85Cl1 MLL5926D MLL5926C MLL5926B MLL5926A

infrared diode

Abstract: LN55
Contextual Info: Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 4.2±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features High-power output, high-efficiency : PO = 3.5 mW typ. 2.8 1.8 1.0 Suited for use with silicon photodetectors

LN55

Contextual Info: Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 4.2±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features High-power output, high-efficiency : PO = 3.5 mW typ. 2.8 1.8 1.0 Suited for use with silicon photodetectors

LN55

Contextual Info: Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 4.2±0.3 4.5±0.3 φ3.5±0.2 1.8 (1.0) 2-0.98±0.2 2-0.45±0.15 10.0 min. 12.8 min. (2.8) • High-power output, high-efficiency: PO = 3.5 mW (typ.)

Contextual Info: Xcelite 5 1/2" Thin Long Nose Pliers with Green Cushion Grips, Carded Product Details Catalog No. UPC Code Description Jaw Type Jaw Length Head Width Head Thickness Tip Dimensions LN55V 037103129161 Long Nose Serrated 1 11/16 in. 17/32 in. 9/32 in. 5/64 in. x 1/16 in.

lN5534

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 3.5 mW (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN55 G aAs Infrared Light Emitting Diode Unit : mm 4.2+0.3 For optical control system s 03.5+0.2 • 2 .3 ., .1.9. F eatures • H igh-pow er output, high-efficiency : P Q = 3.5 m W typ. • Suited for use with silicon photodetectors

ln555

Abstract: 1N50M VR200 D0-204AP
Contextual Info: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Junction Recltlflers 1.0 to 3.0 AMPERES lyp«.1N4245 thru 1N4249 lN5059thru 1N5062 lN5614thru 1N5622 lN5550thru 1N5554 lN5624thru 1N5627 G 1A thru G 1M G 2 A th ru G 2 M G 3A thru G 3M

Contextual Info: Panasonic Infrared Light Emitting Diodes LN55 G aAs Infrared Light Em itting Diode Unit : mm 4.2+0.3 For optical control systems 03.5±O.2 2.3.,.1.9 • Features • • • • High-power output, high-efficiency : PQ = 3.5 mW typ. Suited for use with silicon photodetectors

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For remote control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Suited for use with silicon photodetectors

LN55

Abstract: IR photodetectors
Contextual Info: Panasonic Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode U nit : mm 4.2±0.3 For optical control system s • 03.5+0.2 2 .3 ., .1.9 F eatures • H igh-pow er output, high-efficiency : P 0 = 3.5 mW typ. • Suited for use with silicon photodetectors

PO 102

Abstract: LN55 po102
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Suited for use with silicon photodetectors

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

Contextual Info: Numeric Display 2 Digit 11.0mm .4” Series 19.8 ± 0.35 10.0 10° Lighting Color Red Red Green Green Pin Assignment No. 1 Cathode c1 a f b g c dp D1 d e 1 2 3 4 D2 5 7 6 6.0 2 − φ1.4 8.5 1.5 Cathode e1 Anode e1 3 Cathode d1 Anode d1 4 Common Anode D1

PHOTO TRANSISTOR 940nm to-18

Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Contextual Info: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,

LNC703PS

Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

LT3SA

Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40

LN9705

Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1

ETP80

Abstract: aui to rj45 ECT1101 UTP20038T 2km fm transmitter ETT1101
Contextual Info: i MODEL DESCRIPTION LIST P-'ICE 5 1 Ethernet 1EEE802.3 - The Most Popular Choice for Reliable and Economical Networking In the early 1980s, Digital Equipment Corporation, Intel, and Xerox Co-developed the Ethernet Local Area Networking format. This technology was soon accepted by the IEEE Committee, creating the 802.3 standard.

Contextual Info: Numeric Display 1 Digit 7.6 mm .3” Series Unit: mm 10.0 ± 0.2 2 a 3 b g 4 f 6 c d 7 dp 3.0 5.0 2 Cathode f Anode f 3 Common Anode Common Cathode 14 4 −−− −−− 13 5 −−− −−− −−− 6 12 −−− 7 Cathode e Anode e 8 Cathode d

Contextual Info: Xcelite Table of Contents Xcelite®, founded in 1921, produces high quality tools for professional use. They are known throughout the electronics industry for a comprehensive line of screwdrivers, nutdrivers, convertible nutdriver/ screwdriver sets, interchangeable blade drivers, service tools and kits, pliers and cutters, shears, snips, wire strippers and

LN524RAS

Abstract: LN524GAS LN524GKS LN524RKS LNM224AS01D LNM224KS01D LNM324AS01D LNM324KS01D
Contextual Info: Numeric Display 2 Digit 11.0mm .4” Series a b g c dp D1 d e 1 2 3 4 D2 5 Red Red Green Green 7 6 6.0 1.5 Cathode e1 Anode e1 3 Cathode d1 Anode d1 4 Common Anode D1 Common Cathode D1 5 Common Anode D2 Common Cathode D2 6 Cathode d2 Anode d2 7 Cathode e2