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    LN58 Price and Stock

    Panasonic Electronic Components LN58

    EMITTER IR 950NM 50MA RADIAL
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    STL STL-N-580

    4-PORT PCIE GIGABIT INTEL I350 S
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    Festo PLN-5-8-NT-150-CB

    PLASTIC TUBING
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    Festo PLN-5-8-SW-150-CB

    PLASTIC TUBING
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    MtronPTI M31006AGLN-582.500000

    XTAL OSC VCXO 582.5000MHZ LVDS
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    LN58 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LN58 Panasonic Infrared, UV, Visible Emitters, Optoelectronics, IR LED 950NM 35 DEG SIDE VIEW Original PDF
    LN58 Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN58 Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN58 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN58 Panasonic Light Emitting Diodes Scan PDF
    LN58 Panasonic GaAs infrared light emitting diode for optical control system Scan PDF
    LN58 Panasonic Light Emitting Diodes LED Scan PDF

    LN58 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    human detection infrared circuit

    Abstract: diode 104 Frequency Control Products infrared temperature measure PO 102 traffic light control LN58
    Text: Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 2.9±0.25 3.9±0.3 2.4 (1.5) 2.8 12.8 min. Rating Unit VR 3 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature Topr −25 to +85


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 2.9±0.25 3.9±0.3 2.4 (1.5) 2.8 12.8 min. Rating Unit VR 3 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature Topr −25 to +85


    Original     		PDF

    lN5819

    Abstract: N5818 lN5818 n5817 ln5817 N5819 N5819M 1N589 melf Schottky glass
    Text: lN5817, lN5817M; lN5818, lN5818M; lN5819, lN5819M High Current Schottky Barrier Rectifiers Nominal current IA Features: - Metal on silicon rectifier - Epitaxial construction Protection by a PN junction guard ring High current capability Low forward voltage drop


    Original     		PDF lN5817, lN5817M; lN5818, lN5818M; lN5819, lN5819M N5817, N5818, N5819 DO-41 lN5819 N5818 lN5818 n5817 ln5817 N5819M 1N589 melf Schottky glass

    LN58

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 2.9±0.25 1.2 4.5±0.3 1.7±0.2 0.8 2.8 Emitted light spectrum suited for silicon photodetectors 2.4 1.5 3.9±0.3 Features High-power output, high-efficiency : PO = 3.5 mW typ.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 3.5 mW (typ.)


    Original     		PDF 2002/95/EC)

    PO 102

    Abstract: LN58
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Emitted light spectrum suited for silicon photodetectors


    Original     		PDF 2002/95/EC) PO 102 LN58

    overheating

    Abstract: LN58
    Text: Electromagnetic ballasts Type: LN58.742 230V/50HZ Item number: 169784 Standard version Vacuum-impregnated with polyester resin Lamp type: Output [W]: Voltage [V]: Shape [mm*mm]: Stack length [mm]: Fixing centre [mm]: Overall length [mm]: Protection from overheating:


    Original     		PDF 30V/50HZ 28x41 overheating LN58

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 2.9±0.25 3.9±0.3 (2.4) (1.5) 2.8 12.8 min. Rating Unit VR 3 V IF 50 mA IFP 1 A Power dissipation


    Original     		PDF 2002/95/EC)

    infrared diode

    Abstract: Infrared Emitting Diode Infrared light Emitting Diode LN58
    Text: Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 2.9±0.25 1.2 4.5±0.3 1.7±0.2 0.8 2.8 Emitted light spectrum suited for silicon photodetectors 2.4 1.5 3.9±0.3 Features High-power output, high-efficiency : PO = 3.5 mW typ.


    Original     		PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    PHOTO TRANSISTOR 940nm to-18

    Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
    Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,


    Original     		PDF CND0204ACT-ND CND0215ACT-ND CND0208ACT-ND CND0214ACT-ND CND0209ACT-ND CND0216ACT-ND CND0204ATR-ND CND0215ATR-ND CND0208ATR-ND CND0214ATR-ND PHOTO TRANSISTOR 940nm to-18 cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND

    ic iR light control

    Abstract: VF 100 PANASONIC pulse forward current
    Text: Panasonic Infrared Light Emitting Diodes LN58 G aAs Infrared Light Em itting Diode For optical control systems • Features « H igh-pow er output, high-efficiency : P Q = 3.5 m W typ. « Light em itting spectrum suited for silicon photodetectors t Infrared light em ission close to m onochrom atic light :


    OCR Scan     		PDF 0102Q. ic iR light control VF 100 PANASONIC pulse forward current

    AP 1100 R1

    Abstract: LN58
    Text: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :


    OCR Scan     		PDF

    L2683-01

    Abstract: SE314 122dl 18AF tokin 473 5.5v SE306 SE307-C SE308 SE313 SE3161L
    Text: - • it ¥ H it U tl £ Po min imW f t 14 tSL f t If Ik I f n = 25*0 (T„=25*C ) WS W f± ; t- 4^ # : f t I f Xp /iSIEiiS if- is. m I f Pi> m * T„pr (m A) min!mW'sr' (mA) ty p (V) m a x (V) (m A) ty p (nm) ty p (deg) (m A) (m W ) rc ) - - 0.2 10 1.1


    OCR Scan     		PDF SE306 SE307-C SE308 SE313 typ25 SE314 L-154 SE3161L) L-155 L-137 L2683-01 SE314 122dl 18AF tokin 473 5.5v SE307-C SE308 SE313 SE3161L

    LNC703PS

    Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ


    OCR Scan     		PDF LN124W P5F02-1 PSF02-1 LN155 LN184 LN189L PR002-1 PR002-2 LNC703PS LN9P01S P50024 LNA4401 PR0022 LN68

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    LT3SA

    Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40


    OCR Scan     		PDF LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LT3SA LN9705S LN7301F P700 P3002.2

    LN9705

    Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1


    OCR Scan     		PDF LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LN9705 C3021 mr02 LN9705S

    OLD232

    Abstract: OLD122 OLD222 TLR215A 122dl 18AF 1kl3 OLD223 OLD123 OLD124
    Text: -2 2 1 'ä • 'Jt M £ n 1 t tH tr r, Kt Po min 'mW: ¡m A 1 OLD122 3.4 100 OLD123 2.4 100 OLD124 2.0 60 OLD125 1.0 OLD127 0.3 öt1 14 Hfl & s 'T „ = 2 o c > 17^, - 25 C ! «L Q-'- V m if- t- m n Xp d\ I f Pi> mW1 St iffi ffi n T„Pr i.mA! ty p V


    OCR Scan     		PDF OLD122 OLD123 O-187 OLD124 OLD125 OLD127 OLD222 OLD222H L-128 L-137 OLD232 OLD122 OLD222 TLR215A 122dl 18AF 1kl3 OLD223 OLD123 OLD124

    SLR-981A

    Abstract: SLR-932A SLR-938C GL360 l30 tf 125 SLR981A SLR-889C SLR-935A 122dl L146
    Text: 223- - * m. & % i. iti t l m •± n Po I f IE I f { r „ = 2 5 ic X „ = 25°C) ft m n t 5* m . ne ui V * I f Xr m gf] 1T- m I f Po 1% 51- m 1S m in 1mW) (m A ) min(mW'sr) (m A ) t y p (V ) (m A ) t y p (n m ) (m A ) (m W ) CC) S L R -9 3 2 A t y p 7 .5


    OCR Scan     		PDF SLR-932A SLR-938C SLR-935A SLR-981A SLR-989A SLR-832C SLR-838C 1L-126 L-127 L-128 SLR-981A SLR-932A SLR-938C GL360 l30 tf 125 SLR981A SLR-889C SLR-935A 122dl L146

    SIH-55SB3F

    Abstract: SIR-56SB3 122dl L-117 L-119 LN155 LN175 LN189L LN57 LN58
    Text: 229- - n. % • ± s; £ LN 58 tt & i t ¿fe t¡ £ T & w 14 m « r± * m n m & is. m mWM. ft Xp 0 2 I F Pd T„pr m a x V ty p (n m ) t y p fd e g ) (ra A ) im W ) rc > 1 .5 50 950 ±35 50 75 - L -1 1 6 - 1 .5 50 950 ±18 50 75 - L -1 1 7 I f im A ' 1 .8


    OCR Scan     		PDF 25-Cl L-116 L-117 L-118 LN155 L-119 LN175 LN189L L-120 SIH-55SB3F SIR-56SB3 122dl L-119 LN155 LN175 LN57 LN58

    panasonic inverter dv 707 manual

    Abstract: al 12 fc battery drill charger panasonic inverter manual dv 707 cd 1619 CP fm radio Sharp amplifier SM 30 panasonic inverter dv 707 panasonic parameter inverter dv 707 manual LM 358 battery charger schematic 12v 10A lithium ion car battery charger wiring diagram 220v ac to 5V dc power supply using 7805 regulato
    Text: PRACTICAL DESIGN TECHNIQUES FOR POWER AND THERMAL MANAGEMENT BOOST V IN O ^ SWITCH V|N +7V TO +24V +5V @ 1A A D P3050-5 BIAS ON FB GND COMP 22|xF 4 k il 1nF 100|xF * V|N anyCAP LDO TOPOLOGY C COMP NONINVERTING W IDEBAND DRIVER Rl 3415 American Drive Mississauga, Ontario,LAV TT4


    OCR Scan     		PDF P3050-5 P3603/4/5 ADM869X, OP113, OP176, P181/281/481, P191/291/491, P192/293/493, OP193, P196/296/496, panasonic inverter dv 707 manual al 12 fc battery drill charger panasonic inverter manual dv 707 cd 1619 CP fm radio Sharp amplifier SM 30 panasonic inverter dv 707 panasonic parameter inverter dv 707 manual LM 358 battery charger schematic 12v 10A lithium ion car battery charger wiring diagram 220v ac to 5V dc power supply using 7805 regulato