LND150 APPLICATION Search Results

40822

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement

transistor marking code 12W SOT-23

Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

LN1E

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

LND150

Contextual Info: Supertex inc. LND150 Die Specification Pad Layout 2 3 1 0,0 Backside: Source Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 11 ± 1.5 None 1 (mils) LND150 1 (mils) Back Side Bonding Pad Material Source Voltage

LN1E

Abstract: Marking code mps
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

LND150

Contextual Info: LND150 Die Specification Pad Layout 2 3 1 0,0 Backside: Source Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 11 ± 1.5 None 1 (mils) LND150 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Source

transistor marking code 12W SOT-23

Abstract: marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

transistor marking code 12W SOT-23

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

LND150N8 equivalent

Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

transistor marking code 12W 12

Abstract: LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

ln1e

Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K& 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package b v dsx/ ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

N-Channel Depletion-Mode MOSFET high voltage

Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
Contextual Info: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.

d150n

Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

VF21

Contextual Info: DN3125 DN3125 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 250V 20Ω 200mA Order Number / Package Die* DN3125NW * Die in wafer form. Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors

DN2470

Abstract: 1100 SOT-89 DN2530 DN2535 DN2540 DN2625 DN3135 DN3145 DN3525 DN3535
Contextual Info: Selector Guide Depletion Mode MOSFETs BVDSS min RDS ON max (V) (Ω) DN1509 90 DN2470 Device VGS(OFF) IDSS @ VGS = 0V Package Options Application Notes - 3-Lead SOT-89 (N8) - 500 (typ) - 3-Lead TO-252 (K4) - - 3.5 200 - 3-Lead TO-92 (N3) - 3-Lead SOT-89 (N8)

Contextual Info: DN3525 DN3525 Pre-Release Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die* 250V 6.0Ω 300mA DN3525N8 DN3525NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels.

Contextual Info: DN3535 DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die 350V 10Ω 200mA DN3535N8 DN3535NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels.

DN2450

Abstract: K4 SOT-89 DN2470 sot-89 dual diode DN2530 DN2535 DN2540 DN2625 DN3135 DN3145
Contextual Info: Selector Guide Depletion Mode MOSFETs BVDSX min RDS ON max (V) (Ω) DN1509 90 DN2450 Device VGS(OFF) IDSS @ VGS = 0V min max min max (V) (V) (mA) (mA) 6.0 - 1.8 - 3.5 300 - 500 10 -1.5 -3.5 700 - DN2470 700 42 - 1.5 - 3.5 500 (typ) - DN2530 300 12 - 1.0 - 3.5

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct