VF21
Abstract: VF21/VF31
Text: VF21 VF31 Die Specifications VF21 / VF31 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF21/VF31 30 30 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 9 ± 1.5
|
Original
|
PDF
|
VF21/VF31
VF21
VF21/VF31
|
VF21
Abstract: bond wire Ag
Text: VF21 Die Specifications VF21 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF21 30 30 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 9 ± 1.5 Au Al-Si 6 x 5.5
|
Original
|
PDF
|
|
SW7 357
Abstract: HV803 ausi die attach CSI 2702 HV208 HV82 38495 VF01 VP03 AF03
Text: Chapter 19 – Die Specifications DMOS Die Specifications Selector Guide VF01/VF06/VF21/VF25 VF22/LND1/LP07 VF05/VF13/VF26/TN07 VF32/LNE1/LP08 AF03 LR6 LR7 HT04 HV15/HV16/HV18 HV202 HV204/HV217/HV218/HV227/HV228 HV207 HV208 HV209 HV21/HV22 HV31/49 HV34 HV45/HV46
|
Original
|
PDF
|
VF01/VF06/VF21/VF25
VF22/LND1/LP07
VF05/VF13/VF26/TN07
VF32/LNE1/LP08
HV15/HV16/HV18
HV202
HV204/HV217/HV218/HV227/HV228
HV207
HV208
HV209
SW7 357
HV803
ausi die attach
CSI 2702
HV208
HV82
38495
VF01
VP03
AF03
|
VN10K
Abstract: VN0106N3 VN10KN3-G sivn
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
|
Original
|
PDF
|
VN10K
DSFP-VN10K
B031411
VN10K
VN0106N3
VN10KN3-G
sivn
|
n5 sot-89
Abstract: CH06F
Text: CH06F VGS off IDSS SOT-23 K1 TO-92 N3 TO-220 N5 SOT-89 N8 Device Number BVDSX min (V) RDS(ON) max (Ω) min (V) max (V) min (mA) DN3525 250 6.0 -1.5 -3.5 300.0 VF35 DN3125 250 20 -1.5 -3.5 200.0 VF31 DN25301 300 12 -1.0 -3.5 200.0 DN3535 350 10 -1.5 -3.5
|
Original
|
PDF
|
CH06F
DN3525
DN3125
DN25301
DN3535
DN25351
DN3135
DN25401
DN3545
DN3145
n5 sot-89
CH06F
|
Untitled
Abstract: No abstract text available
Text: DN3535 DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die 350V 10Ω 200mA DN3535N8 DN3535NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
|
Original
|
PDF
|
DN3535
200mA
O-243AA*
DN3535N8
DN3535NW
OT-89.
OT-23
O-220
OT-89
|
LG 42 t
Abstract: No abstract text available
Text: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89.
|
Original
|
PDF
|
TP2424
TP2424
-240V
OT-89.
-800mA
O-243AA*
TP2424N8
OT-23
OT-89
TP2510N8
LG 42 t
|
SAF7730HV
Abstract: BB 509 varicap diode CP3236D TDA8841 phx4nq60e PHX10NQ60E SAA4849PS Philips SAF7730HV om8839ps saf7730hv 331
Text: PHILIPS SEMICONDUCTORS DN 54 December 31, 2004 SEE DN54 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
|
Original
|
PDF
|
|
sot-23 GFs
Abstract: TP0610T
Text: Supertex inc. TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description High input impedance and high gain Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
|
Original
|
PDF
|
TP0610T
DSFP-TP0610T
B031411
sot-23 GFs
TP0610T
|
VF21
Abstract: No abstract text available
Text: DN3125 DN3125 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 250V 20Ω 200mA Order Number / Package Die* DN3125NW * Die in wafer form. Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors
|
Original
|
PDF
|
DN3125
200mA
DN3125NW
OT-23
O-220
OT-89
LND150N3
LND150
Guides/CH06E
VF21
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure
|
Original
|
PDF
|
2N6661
2N6661
DSFP-2N6661
C042711
|
MPC566H
Abstract: cd 1619 CP fm radio mdo11 MPC566 sae 1850 vpw 851 MOTOROLA gm 360 motorola radio 1514sy motorola c100 command series ubda
Text: MPC565UM/D 9/2002 REV 2 MPC565/MPC566 User’s Manual HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd. SPS, Technical Information Center
|
Original
|
PDF
|
MPC565UM/D
MPC565/MPC566
Index-15
Index-16
MPC566H
cd 1619 CP fm radio
mdo11
MPC566
sae 1850 vpw
851 MOTOROLA
gm 360 motorola radio
1514sy
motorola c100 command series
ubda
|
2N6661
Abstract: No abstract text available
Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
|
Original
|
PDF
|
2N6661
2N6661
DSFP-2N6661
C042711
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
|
Original
|
PDF
|
2N6660
2N6660
DSFP-2N6660
C031411
|
|
|
tda8841 s1
Abstract: saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1
Text: Philips Semiconductors December 31, 2004 Attention: Materials Manager, Purchasing Manager and Philips' Products Manager Subject: Philips Semiconductors' Product Discontinuation Notice Number DN-54 Dear Philips Semiconductors Customer or Distributor: This letter confirms to your company that Philips Semiconductors is discontinuing the manufacture of a number of its'
|
Original
|
PDF
|
DN-54
tda8841 s1
saf7730hv
om8839ps
phx4nq60e
TDA8842 s1
Philips SAF7730HV
CP3236D
BB 505 Varicap Diode
TDA8841 S1 datasheet
tda8844s1
|
Untitled
Abstract: No abstract text available
Text: SDR100S20 thru Solid State Devices, Inc. SDR100S50 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 100 Amp STANDARD RECOVERY HIGH POWER RECTIFIER Part Number/Ordering Information 1/
|
Original
|
PDF
|
SDR100S20
SDR100S50
SDR100S_
RC0153A
|
125OC
Abstract: 2N6660 Supertex Product Enhancement-Mode Vertical DMOS FET
Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and
|
Original
|
PDF
|
2N6660
2N6660
DSFP-2N6660
C031411
125OC
Supertex Product Enhancement-Mode Vertical DMOS FET
|
VF22
Abstract: vf17 VF11 VF12 VF13 VF21 ir3251
Text: SDR75U20 thru Solid State Devices, Inc. SDR75U50 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 75 Amp ULTRAFAST RECOVERY HIGH POWER RECTIFIER Part Number/Ordering Information 1/
|
Original
|
PDF
|
SDR75U20
SDR75U50
SDR75U
RC0152A
VF22
vf17
VF11
VF12
VF13
VF21
ir3251
|
HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
|
Original
|
PDF
|
|
diode sot-23 marking AG
Abstract: VF01 sot-23 Marking N2
Text: TN2130 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* N1T❋ 300V 25Ω 2.4V TN2130K1 where ❋ = 2-week alpha date code
|
Original
|
PDF
|
TN2130
O-236AB*
TN2130K1
OT-23:
OT-23.
Guides/CH06A
Table/ch06a
CH06F
TN2640N3
TN2640
diode sot-23 marking AG
VF01
sot-23 Marking N2
|
FS7-16
Abstract: vf246 VF1000
Text: PART NUMBERS C R Y S T A L S VFC CRYSTAL STANDARD PART NUMBERS " •, p a ge 16 p a ge 17 C l pF VM 6PN VM 6S PN 0 .0 3 2 7 6 8 12 NC38 NA NA NA 1 13 VF100 VFS100 VFSM 100 VFSM C100 1 .8 4 3 2 VF184 VFS184 VFSM 184 VFSM C 1 84 1 .8 4 3 2 13 VF184A VFS184A
|
OCR Scan
|
PDF
|
VF100
VFS100
VF184
VFS184
VF184A
VFS184A
VF200A
VFS200
VF210
VFS210
FS7-16
vf246
VF1000
|
M51271
Abstract: M51272
Text: M ITSU BISH I ICs A V C O M M O N M51272P/FP i NTSC/PAL ENCODER DESCRIPTION PIN CONFIGURATION TheM51272P/FP is a semiconductor integrated circuit designed for color signal modulation. It consists of R-Y and B-Y input signal clamp circuits,burst signal mixing,chroma modulator,
|
OCR Scan
|
PDF
|
M51272P/FP
TheM51272P/FP
aM51271
M51272
M51271
M51272
|
V12T
Abstract: No abstract text available
Text: MITSUBISHI ICs AV COMMON M51272P/FP NTSC/PAL ENCODER DESCRIPTION TheM 51272P /FP is a sem iconductor integrated circuit designed PIN CONFIGURATION (TOP VIEW) for color signal modulation. It consists of R-Y and B-Y input I T I R-Y C O LO U R i i J DIFFERENCE IN PUT
|
OCR Scan
|
PDF
|
M51272P/FP
51272P
M51271
M51272
V12T
|
jrm a43
Abstract: M51271 vf17 X 25 UMI
Text: MITSUBISHI ICs AV COMMON M51272P/FP NTSC/PAL ENCODER DESCRIPTION TheM51272P/FP is a semiconductor integrated circuit designed for color signal modulation. It consists of R-Y and B-Y input signal clamp circuits,burst signal mixing,chroma modulator, Y/C mixing amplifier,sync adder and video signal output
|
OCR Scan
|
PDF
|
M51272P/FP
TheM51272P/FP
Q0E1142
M51271
M51272
DDE1143
jrm a43
vf17
X 25 UMI
|
