LO25 Search Results

Contextual Info: nixYS MegaMOS FET Module V M O 450-02F VDSS = 200 V ^D25 = 450 A ^DS on typ = 3 .8 IT lfì Conditions VDSS T, = 25°C to 150°C 200 V V dqr Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V VflSM Transient ±30 V lo25 Tc = 25°C 450 A Idso Tc = 80°C

KA319

Abstract: KA319D 861c
Contextual Info: KA219/KA319 DUAL COMPARATOR DUAL HIGH SPEED VOLTAGE COMPARATOR The KA219 b a dual high speed voltage comparator designed to operate bom a single + SV Supply up to ± 15V dual supplies. Open collector of the output stage makes the KA219compatible wtth RTU, DTL and TTU as well as capable of driving lamps andrelay* at

Contextual Info: niETEC ALCATEL 4SE D • blSôbSl DDOOlbB fl ■ M T E C MTC-6050 T52 D .C . Motor Controller Data Sheet Preliminary Application Specific Standard Products Features • BIMOS Source/Sink "H -Sw ikh" Driver • 24V / 250m A Outputs • Fast Switching Time • TTL / HCMOS input

BUK445-500B

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device Is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

REGULATOR IC 7905

Abstract: 11507B REGULATOR IC 7912 circuit diagram 7905 circuit diagram with rectifier 7912 voltage regulator PIN diagram 7905 IC ST 7912 regulator tic 118 ic 7905 voltage regulator 7912 TO3
Contextual Info: " “ •■■]■■ b lU ^ y N SENEGAL LINEAR INTEGRATED CIRCUITS SG7900A/SG7900AC SG7900/SG7900C NEGATIVE FIXED VOLTAGE REGULATOR DESCRIPTIO N FEATURES The S G 7 9 0 0A /S G 7 9 00 se rie s o f neg a tive regulators o tte r self-contained, fixedvo ltag e ca pa b ility w ith up to 1,5A of load current. W ith a variety of o utp ut voltages

LO20B

Abstract: lO26 1136 smd ic LP3995 LO31B lo21b LO30B
Contextual Info: LP3995 Micropower 150mA CMOS Voltage Regulator with Active Shutdown General Description Key Specifications The LP3995 regulator is designed to meet the requirements of portable wireless battery-powered applications and will provide an accurate output voltage with low noise and low

lm 3059

Abstract: MC55
Contextual Info: IRFSZ14A Advanced Power MOSFET FEATURES BVoss - 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175"t Operating Temperature ■ Lower Leakage Current : 10 m A Max. @ VDS= 60V

saa 1074

Contextual Info: ATV750LV/LVL Features • Low Voltage Programmable Logic Device Wide Power Supply Range - 3.0 V to 5.5 V Ideal for Battery Powered Systems • High Speed Operation 25 ns Max Propagation Delay at Vcc = 3.0 V » Low Power, Three-Volt CMOS Operation ATV750LVL

LO20B

Abstract: LP3995 LP3999 LO21B
Contextual Info: LP3995 Micropower 150mA CMOS Voltage Regulator with Active Shutdown General Description Key Specifications The LP3995 linear regulator is designed to meet the requirements of portable battery-powered applications and will provide an accurate output voltage with low noise and low

30n20

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance

TRANSISTOR b72

Abstract: BUK454-200A BUK454-200B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE b^E D m ^ 5 3 ^ 3 1 GDBDblS 73b • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK453-50B

Abstract: buk453 BUK453-50A T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • bt.53131 0020445 b m PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK627-600A

Abstract: BUK627-600B BUK627-600C
Contextual Info: N AMER PHILIPS/ DIS CRETE 2SE D WÊ DOSGbbS T m PowerMOS transistor Fast Recovery Diode FET BUK627-600A BUK627-600B BUK627-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a p[astic envelope. FREDFET with fast recovery

1N4007 ZENER DIODE

Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
Contextual Info: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE

BUK436-1000B

Abstract: buk436-1000
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK657-400A

Abstract: BUK657-400B BUK657 T0220AB 40QA
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D m ^ 5 3 = 3 3 1 □□ 2 0 7 0 Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V

A7805 regulator

Abstract: ic KA7812 a7811 IC. KA7812 to1a transistor TRANSISTOR 2Sc 2525 F 10 KA7810 TRANSISTOR A7805 A7808 ka7805
Contextual Info: FIXED VOLTAGE REGULATOR POSITJVE KA78XX/A/I 3-TE R M IN A L t A POSITIVE V O LTA G E R EG ULATO RS The KA78XX series of three-terminal positive regulators are available In the TO-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs Internal current

CO75

Abstract: CONNECTOR 83734 vibra 16s 8S22L MIL-S-83734
Contextual Info: CONTECH RESEARCH, INC. TEST REPORT #92139 QUALIFICATION TESTING MIL-S-83734E PART NUMBER: SEP-12454 SAMTEC CORPORATION 67 MECHANIC STREET AllLEBORO, MASSACHUSETTS 02703 508/226-4800 JUNE 29, 1992 TEST REPORT #92139 QUALIFICATION TESTING MIL-S-83734E PART NUMBER: SEP-12454

SMD Capacitor symbols

Abstract: LP3995 LO26B LO20B
Contextual Info: LP3995 Micropower 150mA CMOS Voltage Regulator with Active Shutdown General Description Key Specifications The LP3995 regulator is designed to meet the requirements of portable wireless battery-powered applications and will provide an accurate output voltage with low noise and low

IX 1646

Abstract: 2.t transistor
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP69N03LT, PHB69N03LT, PHD69N03LT QUICK REFERENCE DATA VDSS = 25 V ’Trench’ technology Very low on-state resistance Fast switching

G780

Abstract: 7824 voltage regulator circuit diagram 7824KC diode sg 5 ts 7824 metal pack
Contextual Info: SG7800A/SG7800AC SG7800/SG7800C 51LICDN œ n Ër a l L IN E A R IN T E G R A T E D C IR C U IT S POSITIVE FIXED VOLTAGE REGULATOR DESCRIPTION FEATURES The SG7800A/SG7800 series of positive regulators offer self contained, fixedvoltage capability with up to 1.5A of load current and input voltage up to 50V

1RL640

Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRL640/IRL641 FEATURES • • • • • • • • Lower R d s ON Excellent voltage stability Fact switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

50263

Abstract: LT1H92A lt1119
Contextual Info: FRCM 61025 . 02 I l//o:/9~ Ii:Sa 1:/01 . . . l!:l~ . .“ : ‘, , p. . 10/33 .’ ‘ ~o~3 ‘ SIIARP CORPORATION I I TECI{NICAL LITERATURE FOR GaAsP/GaP Yellow chip LED Device HODEL NO, LT1}192A DOC. NO. DG–94XI06 DATE oct. 3101994 1. These technical literature sheets include tho contents under tile copyright of